Publications

2019

• Flores LF., Tucto KY., Guerra JA., Töfflinger JA., Serquen ES., Osvet A., Batentschuk M., Winnacker A., Grieseler R., Weingärtner R.:
  Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
  In: Optical Materials 92 (2019), p. 16-21
  ISSN: 0925-3467
  DOI: 10.1016/j.optmat.2019.04.003
  BibTeX: Download
• Tejada A., Montañez L., Torres C., Llontop P., Flores L., de Zela F., Winnacker A., Guerra JA.:
  Determination of the fundamental absorption and optical bandgap of dielectric thin films from single optical transmittance measurements
  In: Applied Optics 58 (2019), p. 9585-9594
  ISSN: 2155-3165
  DOI: 10.1364/AO.58.009585
  BibTeX: Download

2017

• Romling L., Levchuk I., Steimle M., Osvet A., Batentschuk M., Winnacker A., Brabec C.:
  Novel fatty-acid assisted co-precipitation method for the synthesis of SrAl2O4: Eu2+, Sm3+ storage phosphor nanoparticles
  11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference (Washington, May 14, 2017 - May 17, 2017)
  In: TechConnect (ed.): Advanced Materials - TechConnect Briefs 2017 2017
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85029423139&origin=inward
  BibTeX: Download

2014

• Milde M., Dembski S., Osvet A., Batentschuk M., Winnacker A., Sextl G.:
  Polymer-assisted solegel process for the preparation of photostimulable core/shell structured SiO2/Zn2SiO4:Mn2+ particles
  In: Materials Chemistry and Physics 148 (2014), p. 1055-1063
  ISSN: 0254-0584
  DOI: 10.1016/j.matchemphys.2014.09.017
  BibTeX: Download

2013

• Osvet A., Batentschuk M., Milde M., Lundt N., Gellermann C., Dembski S., Winnacker A., Brabec C.:
  Photoluminescent and storage properties of photostimulable core/shell type silicate nanoparticles
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 10 (2013), p. 180-184
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201200515
  BibTeX: Download
• Xia Q., Batentschuk M., Osvet A., Richter P., Häder DP., Schneider J., Brabec C., Wondraczek L., Winnacker A.:
  Enhanced photosynthetic activity in Spinacia oleracea by spectral modification with a photoluminescent light converting material
  In: Optics Express 21 (2013), p. A909-A916
  ISSN: 1094-4087
  DOI: 10.1364/OE.21.00A909
  BibTeX: Download

2012

• Batentschuk M., Geisler R., Hum J., Iqbal F., Meister F., Osvet A., Stiegelschmitt A., Winnacker A.:
  Eu2+ and Eu3+ based "concentrated phosphors" as converters for UV LED light: two approaches and two new examples
  In: Applied Physics B-Lasers and Optics 106 (2012), p. 211-221
  ISSN: 0946-2171
  DOI: 10.1007/s00340-011-4735-5
  BibTeX: Download
• Osvet A., Milde M., Dembski S., Rupp S., Gellermann C., Batentschuk M., Brabec C., Winnacker A.:
  Photostimulable fluorescent nanoparticles for biological imaging
  2011 MRS Spring Meeting (San Francisco, CA, April 25, 2011 - April 29, 2011)
  In: 2011 MRS Spring Meeting 2012
  DOI: 10.1557/opl.2011.865
  BibTeX: Download
• Xia Q., Batentschuk M., Osvet A., Richter P., Häder DP., Schneider J., Wondraczek L., Winnacker A., Brabec C.:
  Red-emitting Ca 1-xSr xS:Eu 2+ phosphors as light converters for plant-growth applications
  2011 MRS Spring Meeting (San Francisco, CA, April 25, 2011 - April 29, 2011)
  In: 2011 MRS Spring Meeting 2012
  DOI: 10.1557/opl.2011.864
  BibTeX: Download
• Zorenko Y., Gorbenko V., Savchyn V., Voznyak T., Batentschuk M., Winnacker A., Xia Q., Brabec C.:
  UV emitting single crystalline film scintillators grown by LPE method: Current status and perspective
  2011 MRS Spring Meeting (San Francisco, CA, April 25, 2011 - April 29, 2011)
  In: Materials Research Society Symposium Proceedings 2012
  DOI: 10.1557/opl.2011.1113
  BibTeX: Download
• Zorenko Y., Gorbenko V., Voznyak T., Konstankevych I., Savchyn V., Batentschuk M., Winnacker A., Brabec C.:
  Scintillators based on CdWO 4 and CdWO 4: Bi single crystalline films
  In: IEEE Transactions on Nuclear Science 59 (2012), p. 2281-2285
  ISSN: 0018-9499
  DOI: 10.1109/TNS.2012.2201171
  BibTeX: Download

2011

• Bickermann M., Schimmel S., Epelbaum B., Filip O., Heimann P., Nagata S., Winnacker A.:
  Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 8 (2011), p. 2235–2238
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201000864
  BibTeX: Download
• Dembski S., Rupp S., Milde M., Gellermann C., Dyrba M., Schweizer S., Batentschuk M., Osvet A., Winnacker A.:
  Synthesis and optical properties of luminescent core-shell structured silicate and phosphate nanoparticles
  In: Optical Materials 33 (2011), p. 1106-1110
  ISSN: 0925-3467
  DOI: 10.1016/j.optmat.2010.10.036
  BibTeX: Download

2010

• Kostova MH., Batentschuk M., Götz-Neunhoeffer F., Gruber S., Winnacker A., Greil P., Zollfrank C.:
  Biotemplating of BaFBr:Eu2+ for X-ray storage phosphor applications
  In: Materials Chemistry and Physics 123 (2010), p. 166-171
  ISSN: 0254-0584
  DOI: 10.1016/j.matchemphys.2010.03.077
  BibTeX: Download
• Xia Q., Batentschuk M., Osvet A., Winnacker A., Schneider J.:
  Quantum yield of Eu2+ emission in (Ca1-xSr x)S:Eu light emitting diode converter at 20-420 K
  In: Radiation Measurements 45 (2010), p. 350-352
  ISSN: 1350-4487
  DOI: 10.1016/j.radmeas.2009.09.010
  BibTeX: Download
• Wagner Patrick, Doll Theodor, Schöning Michael J., Zorenko Yu., Gorbenko V., Vozniak T., Batentschuk Miroslaw, Osvet Andres, Winnacker Albrecht:
  Growth and luminescent properties of TbAlO3
  In: physica status solidi (a) 207 (2010), p. 967-973
  ISSN: 1862-6300
  DOI: 10.1002/pssa.200925169
  BibTeX: Download
• Zorenko Y., Gorbenko V., Voznyak T., Batentschuk M., Osvet A., Winnacker A.:
  Luminescence of Mn2+ ions in Tb3Al5O12 garnet
  In: Journal of Luminescence 130 (2010), p. 380-386
  ISSN: 0022-2313
  DOI: 10.1016/j.jlumin.2009.09.024
  BibTeX: Download

2009

• Kostova MH., Zollfrank C., Batentschuk M., Götz-Neunhoeffer F., Winnacker A., Greil P.:
  Bioinspired Design of SrAl2O4:Eu2+ Phosphor
  In: Advanced Functional Materials 19 (2009), p. 599-603
  ISSN: 1616-301X
  DOI: 10.1002/adfm.200800878
  BibTeX: Download
• Weidner M., Batentschuk M., Osvet A., Winnacker A., Tahon JP., Leblans P.:
  Creation of storage centers in CsBr: Eu2+ needle image plates by vacuum ultraviolet radiation
  In: Journal of Applied Physics 106 (2009), Article No.: 063514
  ISSN: 0021-8979
  DOI: 10.1063/1.3224860
  BibTeX: Download
• Winnacker A., Osvet A.:
  Memory and neural networks on the basis of color centers in solids
  In: Biological Chemistry 390 (2009), p. 1133-1138
  ISSN: 1431-6730
  DOI: 10.1515/BC.2009.134
  BibTeX: Download

2008

• Sakwe A., Stockmeier M., Hens P., Müller R., Queren D., Künecke U., Konias K., Hock R., Magerl A., Pons M., Winnacker A., Wellmann P.:
  Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
  In: physica status solidi (b) 245 (2008), p. 1239-1256
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200743520
  BibTeX: Download

2007

• Groß M., Winnacker A., Wellmann P.:
  Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
  In: Thin Solid Films 515 (2007), p. 8567-8572
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.03.136
  BibTeX: Download

2005

• Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
  Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
  In: Materials Science Forum 483 (2005), p. 445-448
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.445
  BibTeX: Download
• Wellmann P., Desperrier P., Müller R., Straubinger T., Winnacker A., Baillet F., Blanquet E., Dedulle J., Pons M.:
  SiC single crystal growth by a modified physical vapor transport technique
  In: Journal of Crystal Growth 275 (2005), p. E555-E560
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.070
  BibTeX: Download
• Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
  In situ visualization of SiC physical vapor transport crystal growth
  In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.253
  BibTeX: Download
• Wellmann P., Straubinger T., Desperrier P., Müller R., Künecke U., Sakwe A., Schmitt H., Winnacker A., Blanquet E., Dedulle J., Pons M.:
  Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
  In: Materials Science Forum 483 (2005), p. 25-30
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.25
  BibTeX: Download

2004

• Desperrier P., Müller R., Winnacker A., Wellmann P.:
  Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
  In: Materials Science Forum 457-460 (2004), p. 727-730
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.727
  BibTeX: Download
• Müller R., Desperrier P., Seitz C., Weißer M., Magerl A., Maier M., Winnacker A., Wellmann P.:
  In-situ Er-doping of SiC bulk single crystals
  In: Materials Science Forum 457-460 (2004), p. 723-726
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.723
  BibTeX: Download
• Weingärtner R., Wellmann P., Winnacker A.:
  On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
  In: Materials Science Forum 457-460 (2004), p. 645-648
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.645
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2003

• Bickermann M., Weingärtner R., Herro ZG., Hofmann HD., Künecke U., Wellmann P., Winnacker A.:
  Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
  In: Materials Science Forum 433-436 (2003), p. 337-340
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.337
  BibTeX: Download
• Wellmann P.J., Herro Z, Selder M., Durst Franz, Püsche R., Hundhausen Martin, Ley Lothar, Winnacker Albrecht:
  Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), p. 9
  ISSN: 0255-5476
  BibTeX: Download
• Herro ZG., Wellmann P., Püsche R., Hundhausen M., Ley L., Maier M., Masri P., Winnacker A.:
  Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
  In: Journal of Crystal Growth 258 (2003), p. 261-267
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
  BibTeX: Download
• Herro Z., Wellmann P.J., Püsche R., Hundhausen Martin, Ley Lothar, Maier M., Masri P., Winnacker Albrecht:
  Investigation of mass transport during PVT growth of SiC by 13C labelling of source material
  In: Journal of Crystal Growth 258 (2003), p. 261
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
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• Weingärtner R., Albrecht A., Wellmann P., Winnacker A.:
  Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
  In: Materials Science Forum 433-436 (2003), p. 341-344
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.341
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• Weingärtner R., Bickermann M., Herro ZG., Künecke U., Sakwe A., Wellmann P., Winnacker A.:
  Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
  In: Materials Science Forum 433-436 (2003), p. 333-336
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.333
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• Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
  Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), p. 9-12
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.9
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2002

• Straubinger T., Bickermann M., Rasp M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
  In: Materials Science Forum 389-393 (2002), p. 131-134
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.389-393.131
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• Straubinger T., Bickermann M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
  In: Journal of Crystal Growth 240 (2002), p. 117-123
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(02)00917-X
  BibTeX: Download
• Weingärtner R., Wellmann P., Bickermann M., Hofmann HD., Straubinger T., Winnacker A.:
  Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
  In: Applied Physics Letters 80 (2002), p. 70-72
  ISSN: 0003-6951
  DOI: 10.1063/1.1430262
  BibTeX: Download
• Wellmann P., Herro ZG., Straubinger T., Winnacker A.:
  'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
  In: Materials Science Forum 389-393 (2002), p. 91-94
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.389-393.91
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• Wellmann P., Weingärtner R., Bickermann M., Straubinger T., Winnacker A.:
  Optical quantitative determination of doping levels and their distribution in SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(01)00976-X
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2001

• Bickermann M., Hofmann HD., Rasp M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  Study of boron incorporation during PVT growth of p-type SiC crystals
  In: Materials Science Forum 353-356 (2001), p. 49-52
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.49
  BibTeX: Download
• Bickermann M., Hofmann HD., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  On the preparation of semi-insulating SiC bulk crystals by the PVT technique
  In: Applied Surface Science 184 (2001), p. 84-89
  ISSN: 0169-4332
  DOI: 10.1016/S0169-4332(01)00481-0
  BibTeX: Download
• Hofmann HD., Bickermann M., Ebling D., Epelbaum B., Kadinski L., Selder M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  SiC crystal growth from the vapor and liquid phase
  In: Materials Research Society Symposium - Proceedings 640 (2001), Article No.: H1.1
  ISSN: 0272-9172
  DOI: 10.1557/PROC-640-H1.1
  BibTeX: Download
• Straubinger T., Bickermann M., Hofmann HD., Weingärtner R., Wellmann P., Winnacker A.:
  Stability criteria for 4H-SiC bulk growth
  In: Materials Science Forum 353-356 (2001), p. 25-28
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.25
  BibTeX: Download
• Straubinger T., Wellmann P., Winnacker A.:
  Investigation of a PVT SiC-growth set-up modified by an additional gas flow
  In: Materials Science Forum 353-356 (2001), p. 33-36
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.33
  BibTeX: Download
• Weingärtner R., Bickermann M., Bushevoy S., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00599-7
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• Weingärtner R., Bickermann M., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
  In: Materials Science Forum 353-356 (2001), p. 397-400
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.397
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• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
  In: Materials Science Forum 353-356 (2001), p. 11-14
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.11
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• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process
  In: Materials Science Forum 225 (2001), p. 353-356
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.11
  URL: http://www.scientific.net/MSF.353-356.11
  BibTeX: Download
• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of source material on silicon carbide vapor transport growth process
  In: Journal of Crystal Growth 225 (2001), p. 312-316
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)00881-8
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2000

• Straubinger T., Bickermann M., Grau M., Hofmann HD., Kadinski L., Müller G., Selder M., Wellmann P., Winnacker A.:
  Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
  In: Materials Science Forum 338-342 (2000), p. 39-42
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.338-342.39
  BibTeX: Download
• Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
  In: Materials Science Forum 338-342 (2000), p. 71-74
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.338-342.71
  BibTeX: Download
• Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
  In: Journal of Crystal Growth 216 (2000), p. 263-272
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(00)00372-9
  BibTeX: Download
• Winnacker A., Hofmann HD., Wellmann P.:
  Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics
  Third Vietnam-German Workshop on Physics and Engineering (Ho Chi Minh City)
  In: Proceedings of the third Vietnam-German Workshop on Physics and Engineering 2000
  BibTeX: Download

1999

• Hofmann HD., Schmitt E., Bickermann M., Kölbl M., Wellmann P., Winnacker A.:
  Analysis on defect generation during the SiC bulk growth process
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials B61-62 (1999), p. 48-53
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(98)00443-7
  BibTeX: Download
• Wellmann P., Bickermann M., Grau M., Hofmann HD., Straubinger T., Winnacker A.:
  Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging
  In: Materials Research Society Symposium - Proceedings 572 (1999), p. 259-264
  ISSN: 0272-9172
  DOI: 10.1557/PROC-572-259
  BibTeX: Download

1996

• Wellmann P., Winnacker A., Pensl G.:
  On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP
  In: Materials Research Society Symposium - Proceedings 422 (1996), p. 255-266
  ISSN: 0272-9172
  DOI: 10.1557/PROC-422-255
  BibTeX: Download

1995

• Burchard A., Deicher M., Forkel-Wirth D., Freidinger J., Kerle T., Magerle R., Pfeiffer W., Prost W., Wellmann P., Winnacker A.:
  Acceptor-hydrogen interaction in ternary III-V semiconductors
  In: Materials Science Forum 196-201 (1995), p. 987-991
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.196-201.987
  BibTeX: Download

1994

• Waldmüller S., Lang M., Wellmann P., Winnacker A.:
  Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy
  IEEE, 6th International Conference on InP and Related Materials (Santa Barbara, CA, March 27, 1994 - March 31, 1994)
  In: IEEE (ed.): Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) 1994
  DOI: 10.1109/ICIPRM.1994.328209
  BibTeX: Download