Publications

2023

• Ihle J., Wellmann P.:
  In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
  DOI: 10.4028/p-568g51
  BibTeX: Download
• Kollmuß M., La Via F., Wellmann P.:
  Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC
  In: Crystal Research and Technology (2023)
  ISSN: 0232-1300
  DOI: 10.1002/crat.202300034
  BibTeX: Download
• Kollmuß M., Shi X., Ou H., Wellmann P.:
  Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
  DOI: 10.4028/p-58x5tx
  BibTeX: Download
• Nguyen BD., Roder M., Danilewsky A., Steiner J., Wellmann P., Sandfeld S.:
  Automated analysis of X-ray topography of 4H-SiC wafers: Image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations
  In: Journal of Materials Research (2023)
  ISSN: 0884-2914
  DOI: 10.1557/s43578-022-00880-z
  BibTeX: Download
• Ou H., Shi X., Lu Y., Kollmuß M., Steiner J., Tabouret V., Syväjärvi M., Wellmann P., Chaussende D.:
  Novel Photonic Applications of Silicon Carbide
  In: Materials 16 (2023), Article No.: 1014
  ISSN: 1996-1944
  DOI: 10.3390/ma16031014
  BibTeX: Download
• Steiner J., Nguyen BD., Sandfeld S., Wellmann P.:
  Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
  DOI: 10.4028/p-eu98j0
  BibTeX: Download
• Strüber S., Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
  Investigation of the Nucleation Process During the Initial Stage of PVT Growth of 4H-SiC
  In: Solid State Phenomena, Trans Tech Publications Ltd, 2023, p. 51-56
  DOI: 10.4028/p-x54xp1
  BibTeX: Download
• Wellmann P., Steiner J., Strüber S., Arzig M., Salamon M., Uhlmann N., Nguyen BD., Sandfeld S.:
  The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology
  In: Diamond and Related Materials 136 (2023), Article No.: 109895
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2023.109895
  BibTeX: Download

2022

• Arzig M., Künecke U., Salamon M., Uhlmann N., Wellmann P.:
  Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
  13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
  In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
  DOI: 10.4028/p-f58944
  BibTeX: Download
• Calogero G., Deretzis I., Fisicaro G., Kollmuß M., La Via F., Lombardo SF., Schöler M., Wellmann P., La Magna A.:
  Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
  In: Crystals 12 (2022)
  ISSN: 2073-4352
  DOI: 10.3390/cryst12121701
  BibTeX: Download
• Freund T., Cicconi MR., Wellmann P.:
  Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites
  In: physica status solidi (b) (2022)
  ISSN: 0370-1972
  DOI: 10.1002/pssb.202200094
  BibTeX: Download
• Hayashi K., Lederer M., Fukumoto Y., Goto M., Yamamoto Y., Happo N., Harada M., Inamura Y., Oikawa K., Ohoyama K., Wellmann P.:
  Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography
  In: Applied Physics Letters 120 (2022), Article No.: 132101
  ISSN: 0003-6951
  DOI: 10.1063/5.0080895
  BibTeX: Download
• Ihle J., Wellmann P.:
  In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry
  13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
  In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
  DOI: 10.4028/p-gt22u6
  BibTeX: Download
• Kollmuß M., Köhler J., Ou H., Fan W., Chaussende D., Hock R., Wellmann P.:
  Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications
  13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
  In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
  DOI: 10.4028/p-nshb40
  BibTeX: Download
• Kollmuß M., Mauceri M., Roder M., La Via F., Wellmann P.:
  In situ bow reduction during sublimation growth of cubic silicon carbide
  In: Reviews on Advanced Materials Science 61 (2022), p. 829-837
  ISSN: 1606-5131
  DOI: 10.1515/rams-2022-0278
  BibTeX: Download
• Kollmuß M., Schöler M., Anzalone R., Mauceri M., La Via F., Wellmann P.:
  Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
  13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
  In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
  DOI: 10.4028/p-6ef373
  BibTeX: Download
• Schimmel S., Salamon M., Tomida D., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Ishiguro T., Honda Y., Chichibu SF., Amano H., Schlücker E., Wellmann P.:
  In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth
  7th European Conference on Crystal Growth (Paris, July 25, 2022 - July 27, 2022)
  BibTeX: Download
• Steiner J., Nguyen BD., Roder M., Danilewsky A., Sandfeld S., Wellmann P.:
  Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
  13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
  In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
  DOI: 10.4028/p-y8n42h
  BibTeX: Download
• Steiner J., Wellmann P.:
  Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
  In: Materials 15 (2022)
  ISSN: 1996-1944
  DOI: 10.3390/ma15051897
  BibTeX: Download
• Wellmann P., Arzig M., Ihle J., Kollmuß M., Steiner J., Mauceri M., Crippa D., Lavia F., Salamon ., Uhlmann N., Roder M., Danilewsky A., Nguyen BD., Sandfeld S.:
  Review of Sublimation Growth of SiC Bulk Crystals
  13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Virtual, Online, October 24, 2021 - October 28, 2021)
  In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
  DOI: 10.4028/p-05sz31
  BibTeX: Download

2021

• Arzig M., Künecke U., Salamon M., Uhlmann N., Wellmann P.:
  Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals
  In: Journal of Crystal Growth 576 (2021), Article No.: 126361
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2021.126361
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• Künecke U., Schuster M., Wellmann P.:
  Analysis of compositional gradients in Cu(In,Ga)(S,Se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energies
  In: Materials 14 (2021), Article No.: 2861
  ISSN: 1996-1944
  DOI: 10.3390/ma14112861
  URL: https://www.mdpi.com/1996-1944/14/11/2861
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• Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H., Wellmann P.:
  Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation
  Seminar of the Young Crystal Growers (DGKK) (Berlin, October 5, 2022 - October 6, 2021)
  BibTeX: Download
• Schimmel S., Wellmann P.:
  In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technology
  In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 171-190 (Springer Series in Materials Science, Vol.304)
  ISBN: 978-3-030-56305-9
  DOI: 10.1007/978-3-030-56305-9_10
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• Schlücker E., Hertweck B., Schimmel S., Wellmann P.:
  Special Equipment for Ammonothermal Processes
  In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 317-328 (Springer Series in Materials Science, Vol.304)
  ISBN: 978-3-030-56305-9
  DOI: 10.1007/978-3-030-56305-9_17
  BibTeX: Download
• Schöler M., La Via F., Mauceri M., Wellmann P.:
  Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates
  In: Crystal Growth and Design (2021)
  ISSN: 1528-7483
  DOI: 10.1021/acs.cgd.1c00343
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• Via FL., Zimbone M., Bongiorno C., La Magna A., Fisicaro G., Deretzis I., Scuderi V., Calabretta C., Giannazzo F., Zielinski M., Anzalone R., Mauceri M., Crippa D., Scalise E., Marzegalli A., Sarikov A., Miglio L., Jokubavicius V., Syvajarvi M., Yakimova R., Schuh P., Schöler M., Kollmuß M., Wellmann P.:
  New approaches and understandings in the growth of cubic silicon carbide
  In: Materials 14 (2021), Article No.: 5348
  ISSN: 1996-1944
  DOI: 10.3390/ma14185348
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2020

• Arzig M., Salamon M., Hsiao TC., Uhlmann N., Wellmann P.:
  Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
  In: Journal of Crystal Growth 532 (2020), Article No.: 125436
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2019.125436
  BibTeX: Download
• Danilewsky A., Wellmann P., Miller W.:
  The 50th Anniversary of the German Association for Crystal Growth, DGKK
  In: Crystal Research and Technology 55 (2020), Article No.: 2000009
  ISSN: 0232-1300
  DOI: 10.1002/crat.202000009
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• Nguyen BD., Rausch A., Steiner J., Wellmann P., Sandfeld S.:
  On the importance of dislocation flow in continuum plasticity models for semiconductor materials
  In: Journal of Crystal Growth 532 (2020), Article No.: 125414
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2019.125414
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• Schimmel S., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Schlücker E., Wellmann P.:
  Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperatures
  In: Crystals 10 (2020), p. 1-18
  ISSN: 2073-4352
  DOI: 10.3390/cryst10090723
  BibTeX: Download
• Schöler M., Lederer M., Schuh P., Wellmann P.:
  Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
  In: physica status solidi (b) 257 (2020), Article No.: 1900286
  ISSN: 0370-1972
  DOI: 10.1002/pssb.201900286
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• Steiner J., Arzig M., Denisov A., Wellmann P.:
  Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
  In: Crystal Research and Technology 55 (2020), Article No.: 1900121
  ISSN: 0232-1300
  DOI: 10.1002/crat.201900121
  BibTeX: Download
• Sytnyk M., Yousefi-Amin AA., Freund T., Prihoda A., Götz K., Unruh T., Harreiß C., Will J., Spiecker E., Levchuk J., Osvet A., Brabec C., Künecke U., Wellmann P., Volobuev VV., Korczak J., Szczerbakow A., Story T., Simbrunner C., Springholz G., Wechsler D., Lytken O., Lotter S., Kampmann F., Maultzsch J., Singh K., Voznyy O., Heiß W.:
  Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates
  In: Advanced Functional Materials 30 (2020), Article No.: ARTN 2004612
  ISSN: 1616-301X
  DOI: 10.1002/adfm.202004612
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• Weber A., Lechner R., Grünsteidl S., Borowski P., Schubbert C., Dalibor T., Heise SJ., Ohland J., Savchenko I., Ahmed H., Hirwa H., Parisi J., Klenk R., Reyes-Figueroa P., Farias Basulto G., Aghaei M., Ulbrich C., Waack E., Hock R., Dallmann J., Künecke U., Schuster M., Wellmann P.:
  Investigating and Improving Performance Ratio of Cu(In,Ga)(S,Se)2 Photovoltaic Devices
  EU PVSEC (Marseille, September 7, 2020 - September 11, 2020)
  BibTeX: Download
• Wellmann P.:
  Perfect materials as the base for technical innovation
  In: The Innovation Platform 4 (2020), p. 82-85
  URL: https://www.innovationnewsnetwork.com/the-innovation-platform/
  BibTeX: Download
• Wellmann P., Schuh P., Kollmuß M., Schöler M., Steiner J., Zielinski M., Mauceri M., La Via F.:
  Prospects of bulk growth of 3C-SiC using sublimation growth
  In: Materials Science Forum 1004 MSF (2020), p. 113-119
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.1004.113
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2019

• Arzig M., Salamon M., Uhlmann N., Wellmann P.:
  Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization
  In: Advanced Engineering Materials (2019), Article No.: 1900778
  ISSN: 1438-1656
  DOI: 10.1002/adem.201900778
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• Arzig M., Salamon M., Uhlmann N., Wellmann P.:
  Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup
  In: Materials Science Forum 963 (2019), p. 14-17
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.14
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• Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
  Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals
  In: Materials 12 (2019), Article No.: 2591
  ISSN: 1996-1944
  DOI: 10.3390/ma12162591
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• Ellefsen OM., Arzig M., Steiner J., Wellmann P., Runde P.:
  Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
  In: Materials 12 (2019), Article No.: 3272
  ISSN: 1996-1944
  DOI: 10.3390/ma12193272
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• Hassanien AE., Abdelhaleem S., Ahmad R., Schuster M., Moustafa SH., Distaso M., Peukert W., Wellmann P.:
  Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique
  In: Journal of Nanoelectronics and Optoelectronics 14 (2019), p. 1394-1400
  ISSN: 1555-130X
  DOI: 10.1166/jno.2019.2633
  BibTeX: Download
• Lin L., Ou Y., Jokubavicius V., Syväjärvi M., Liang M., Liu Z., Yi X., Schuh P., Wellmann P., Herstrøm B., Jensen F., Ou H.:
  An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
  In: Materials Science in Semiconductor Processing 91 (2019), p. 9-12
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2018.10.028
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• Salamon M., Arzig M., Uhlmann N., Wellmann P.:
  Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
  In: Materials Science Forum 963 (2019), p. 5-9
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.5
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• Salamon M., Arzig M., Wellmann P., Uhlmann N.:
  Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystal
  In: Materials 12 (2019), Article No.: 3652
  ISSN: 1996-1944
  DOI: 10.3390/ma12223652
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• Salamon M., Arzig M., Wellmann P., Uhlmann N.:
  Three-dimensional in-situ growth surveillance of bulky SiC crystals
  International Symposium on Digital Industrial Radiology and Computed Tomography – DIR2019 (Fürth, July 2, 2019 - July 4, 2019)
  In: German Society for Non-Destructive Testing (DGZfP) (ed.): Proceedings of the DIR 2019 2019
  BibTeX: Download
• Schuh P., Künecke U., Litrico G., Mauceri M., La Via F., Monnoye S., Zielinski M., Wellmann P.:
  Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
  In: Materials Science Forum 963 (2019), p. 149-152
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.149
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• Schuh P., La Via F., Mauceri M., Zielinski M., Wellmann P.:
  Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth
  In: Materials 12 (2019), Article No.: 2179
  ISSN: 1996-1944
  DOI: 10.3390/ma12132179
  BibTeX: Download
• Schuh P., Steiner J., La Via F., Mauceri M., Zielinski M., Wellmann P.:
  Limitations during Vapor Phase Growth of Bulk (100)
  3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
  In: Materials 12 (2019), Article No.: 2353
  ISSN: 1996-1944
  DOI: 10.3390/ma12152353
  URL: https://www.mdpi.com/1996-1944/12/15/2353
  BibTeX: Download
• Schuster M., Stapf D., Osterrieder T., Barthel V., Wellmann P.:
  Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure
  In: Coatings 9 (2019), p. 1-16
  ISSN: 2079-6412
  DOI: 10.3390/coatings9080484
  URL: https://www.mdpi.com/2079-6412/9/8/484
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• Schöler M., Brecht C., Wellmann P.:
  Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide
  In: Materials 12 (2019), Article No.: 2487
  ISSN: 1996-1944
  DOI: 10.3390/ma12152487
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• Schöler M., Lederer M., Schuh P., Wellmann P.:
  Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
  (2019), Article No.: arXiv:1906.07433
  URL: https://arxiv.org/abs/1906.07433
  BibTeX: Download
  (online publication)
• Schöler M., Lederer M., Wellmann P.:
  Deep electronic levels in n-type and p-type 3C-SiC
  In: Materials Science Forum 963 (2019), p. 297-300
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.297
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• Schöler M., Schuh P., Steiner J., Wellmann P.:
  Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
  In: Materials Science Forum 963 (2019), p. 157-160
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.157
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• Steiner J., Arzig M., Hsiao TC., Wellmann P.:
  Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules
  In: Materials Science Forum 963 (2019), p. 42-45
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.42
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• Steiner J., Roder M., Nguyen BD., Sandfeld S., Danilewsky A., Wellmann P.:
  Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC
  In: Materials 12 (2019), Article No.: 2207
  ISSN: 1996-1944
  DOI: 10.3390/ma12132207
  BibTeX: Download
• Tarekegne AT., Norrman K., Jokubavicius V., Syväjärvi M., Schuh P., Wellmann P., Ou H.:
  Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC
  In: Applied Physics B-Lasers and Optics 125 (2019), Article No.: 172
  ISSN: 0946-2171
  DOI: 10.1007/s00340-019-7279-8
  BibTeX: Download
• Wellmann P., La Via F., Jennings M. (ed.):
  Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications"
  2019
  (Materials, Vol. Energy Materials)
  BibTeX: Download

2018

• Abdelhaleem S., Hassanien A., Ahmad R., Schuster M., Ashour A., Distaso M., Peukert W., Wellmann P.:
  Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique
  In: Journal of Electronic Materials (2018)
  ISSN: 0361-5235
  DOI: 10.1007/s11664-018-6636-4
  BibTeX: Download
• Arzig M., Hsiao T., Wellmann P.:
  Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules
  In: Advanced Materials Proceedings 3 (2018), p. 540-543
  ISSN: 2002-4428
  DOI: 10.5185/amp.2018/1414
  BibTeX: Download
• Arzig M., Salamon M., Uhlmann N., Johansen BA., Wellmann P.:
  Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
  In: Materials Science Forum 924 (2018), p. 245-248
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.924.245
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• Fahlbusch L., Wellmann P.:
  Solution Growth of Silicon Carbide Using the Vertical Bridgman Method
  In: Crystal Research and Technology (2018), Article No.: 1800019
  ISSN: 0232-1300
  DOI: 10.1002/crat.201800019
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• La Via F., Severino A., Anzalone R., Bongiorno C., Litrico G., Mauceri M., Schöler M., Schuh P., Wellmann P.:
  From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
  In: Materials Science in Semiconductor Processing 78 (2018), p. 57-68
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2017.12.012
  BibTeX: Download
• Schimmel S., Duchstein P., Steigerwald T., Kimmel AC., Schlücker E., Zahn D., Niewa R., Wellmann P.:
  In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
  In: Journal of Crystal Growth 498 (2018), p. 214-223
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2018.06.024
  BibTeX: Download
• Schuster M., Sisterhenn P., Graf L., Wellmann P.:
  Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques
  In: International Journal of Nanoparticle Research 2 (2018)
  DOI: 10.28933/ijnr-2017-12-1501
  URL: http://escipub.com/ijnr-2017-12-1501/
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• Wellmann P.:
  Review of SiC crystal growth technology
  In: Semiconductor Science and Technology 33 (2018), p. 1-21
  ISSN: 0268-1242
  DOI: 10.1088/1361-6641/aad831
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2017

• Häusler J., Schimmel S., Wellmann P., Schnick W.:
  Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
  In: Chemistry - A European Journal 23 (2017), p. 12275-12282
  ISSN: 0947-6539
  DOI: 10.1002/chem.201701081
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• Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
  Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
  In: Journal of Crystal Growth 479 (2017), p. 59-66
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.027
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• Schimmel S., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
  Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides
  5th German-Swiss Conference on Crystal Growth (Freiburg, March 8, 2017 - March 10, 2017)
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• Schuh P., Arzig M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Growing bulk-like 3C-SiC from seeding material produced by CVD
  In: physica status solidi (a) (2017), Article No.: 1600429
  ISSN: 1862-6300
  DOI: 10.1002/pssa.201600429
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• Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
  3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers
  In: Materials Science Forum 897 (2017), p. 15-18
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.15
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• Schuh P., Schöler M., Wilhelm M., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
  In: Journal of Crystal Growth 478 (2017), p. 159-162
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.002
  BibTeX: Download
• Schuster M., Groß S., Roider F., Maksimenko I., Wellmann P.:
  Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires
  In: International Journal of Nanoparticles and Nanotechnology 3 (2017)
  Open Access: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
  URL: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
  BibTeX: Download
• Schöler M., Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers
  In: Advanced Materials Proceedings 2 (2017), p. 774-778
  ISSN: 2002-4428
  DOI: 10.5185/amp.2017/419
  BibTeX: Download
• Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
  Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates
  In: Journal of Materials Science: Materials in Electronics (2017), p. 1-9
  ISSN: 0957-4522
  DOI: 10.1007/s10854-017-6467-8
  BibTeX: Download
• Wei Y., Künecke U., Jokubavicius V., Syväjärvi M., Wellmann P., Ou H.:
  Low Temperature Photoluminescence of 6H fluorescent SiC
  E-MRS Spring Meeting 2017 (Strasbourg, May 22, 2017 - May 26, 2017)
  BibTeX: Download
• Wei Y., Künecke U., Wellmann P., Ou H.:
  Detection of effective recombination centers in fluorescent SiC using thermally
  stimulated luminescence
  5th international workshop on LED and Solar Applications (Lyngby, September 13, 2017 - September 14, 2017)
  BibTeX: Download
• Wei Y., Künecke U., Wellmann P., Ou H.:
  Thermally Stimulated Luminescence in 6H Fluorescent SiC
  International Conference on Silicon Carbide and Related Materials (Washington, DC, September 17, 2017 - September 22, 2017)
  BibTeX: Download
• Wellmann P.:
  Materials-Related Solutions for Industry
  In: Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (ed.): Materials Innovation for the global circular economy and sustainable society, 2017 (WORLD MATERIALS SUMMITS, Vol.6)
  BibTeX: Download
• Wellmann P.:
  Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond
  In: Zeitschrift für Anorganische und Allgemeine Chemie 643 (2017), p. 1312-1322
  ISSN: 0044-2313
  DOI: 10.1002/zaac.201700270
  BibTeX: Download
• Wilhelm M., Syväjärvi M., Wellmann P.:
  Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence
  In: Advanced Materials Proceedings 2 (2017), p. 769-773
  ISSN: 2002-4428
  DOI: 10.5185/amp.2017/415
  BibTeX: Download
• Yakimova R., Ivanov IG., Vines L., Linnarsson MK., Gällström A., Giannazzo F., Roccaforte F., Wellmann P., Syväjärvi M., Jokubavicius V.:
  Growth, defects and doping of 3C-SiC on hexagonal polytypes
  In: ECS Journal of Solid State Science and Technology 6 (2017), p. P741-P745
  ISSN: 2162-8769
  DOI: 10.1149/2.0281710jss
  BibTeX: Download

2016

• Fahlbusch L., Schöler M., Mattle P., Schnitzer S., Khodamoradi H., Iwamoto N., Svensson BG., Wellmann P.:
  High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
  In: Materials Science Forum 858 (2016), p. 33-36
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.33
  BibTeX: Download
• Salamon M., Reisinger S., Schlechter T., Schmitt M., Hofmann T., Uhlmann N., Schug S., Arlt W., Fahlbusch L., Arzig M., Wellmann P.:
  X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry
  WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY (Iguassu Falls, September 26, 2016 - September 29, 2016)
  In: International Society for Industrial Process (ed.): WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY 2016
  URL: http://www.isipt.org/world-congress/8.html
  BibTeX: Download
• Schimmel S., Künecke U., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
  Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
  In: Journal of Crystal Growth 456 (2016), p. 33-42
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2016.08.067
  BibTeX: Download
• Schuh P., Vecera P., Hirsch A., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates
  In: Materials Science Forum 858 (2016), p. 89-92
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.89
  BibTeX: Download
• Schuster M., Wernicke T., Möckel S., Wellmann P.:
  Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions
  In: International Journal of Nanoparticles and Nanotechnology 2:006 (2016)
  Open Access: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
  URL: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
  BibTeX: Download
• Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
  Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
  In: Journal of Materials Science: Materials in Electronics 1-9 (2016), p. 506-511
  ISSN: 0957-4522
  DOI: 10.1109/PVSC.2016.7749646
  BibTeX: Download
• Sun J., Jokubavicius V., Gao L., Booker I., Jansson M., Liu X., Hofmann JP., Hensen EJ., Linnarsson MK., Wellmann P., Ramiro I., Marti A., Yakimova R., Syväjärvi M.:
  Solar driven energy conversion applications based on 3C-SiC
  In: Materials Science Forum 858 (2016), p. 1028-1031
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.1028
  BibTeX: Download
• Syväjärvi M., Ma Q., Jokubavicius V., Galeckas A., Sun J., Liu X., Jansson M., Wellmann P., Linarsson M., Runde P., Johansen BA., Thøgersen A., Diplas S., Carvalho PA., Løvvik OM., Wright DN., Azarov AY., Svensson BG.:
  Cubic silicon carbide as a potential photovoltaic material
  In: Solar Energy Materials and Solar Cells 145 (2016), p. 104-108
  ISSN: 0927-0248
  DOI: 10.1016/j.solmat.2015.08.029
  BibTeX: Download
• Wellmann P., Fahlbusch L., Salamon M., Uhlmann N.:
  Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
  In: Materials Science Forum 858 (2016), p. 49-52
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.49
  BibTeX: Download

2015

• Beier M., Trempa M., Seebeck J., Reimann C., Wellmann P., Gründig-Wendrock B., Friedrich J., Dadzis K., Sylla L., Richter T.:
  Feedstock recharging during directional solidification of silicon ingots for PV applications
  29th European Photovoltaic Solar Energy Conference and Exhibition (Amsterdam, September 22, 2014 - September 26, 2014)
  In: EUPVSEC (ed.): Proceedings of the 29th EU PVSEC conference 2015
  DOI: 10.4229/EUPVSEC20142014-2AV.1.11
  BibTeX: Download
• Hertweck B., Schimmel S., Steigerwald T., Alt N., Wellmann P., Schlücker E.:
  Ceramic liner technology for ammonoacidic synthesis
  In: Journal of Supercritical Fluids 99 (2015), p. 76-87
  ISSN: 0896-8446
  DOI: 10.1016/j.supflu.2015.01.017
  BibTeX: Download
• Jokubavicius V., Yazdi GR., Liljedahl R., Ivanov IG., Sun J., Liu X., Schuh P., Wilhelm M., Wellmann P., Yakimova R., Syväjärvi M.:
  Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
  In: Crystal Growth & Design 15 (2015), p. 2940-2947
  ISSN: 1528-7483
  DOI: 10.1021/acs.cgd.5b00368
  BibTeX: Download
• Künecke U., Hetzner C., Möckel S., Yoo HS., Hock R., Wellmann P.:
  Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence
  In: Thin Solid Films 582 (2015), p. 387-391
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.10.063
  BibTeX: Download
• Möckel S., Wernicke T., Arzig M., Köder P., Brandl M., Ahmad R., Distaso M., Peukert W., Hock R., Wellmann P.:
  Low temperature formation of CuIn1 - xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors
  In: Thin Solid Films 582 (2015), p. 60-68
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.11.060
  BibTeX: Download
• Rankl D., Jokubavicius V., Syväjärvi M., Wellmann P.:
  Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
  In: Materials Science Forum 821-823 (2015), p. 77-80
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.821-823.77
  BibTeX: Download
• Schimmel S., Lindner M., Steigerwald T., Hertweck B., Richter TM., Künecke U., Alt N., Niewa R., Schlücker E., Wellmann P.:
  Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
  In: Journal of Crystal Growth 418 (2015), p. 64-69
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2015.02.020
  BibTeX: Download
• Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
  Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
  DOI: 10.1016/j.egypro.2015.12.296
  BibTeX: Download
• Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
  Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
  In: Energy Procedia 84 (2015), p. 62-70
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.296
  BibTeX: Download
• Wellmann P., Neubauer G., Fahlbusch L., Salamon M., Uhlmann N.:
  Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
  In: Crystal Research and Technology 50 (2015), p. 2-9
  ISSN: 0232-1300
  DOI: 10.1002/crat.201400216
  BibTeX: Download
• Wilhelm M., Beck F., Wellmann P.:
  Towards the growth of SiGeC epitaxial layers for the application in Si solar cells
  In: Energy Procedia 84 (2015), p. 236-241
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.319
  BibTeX: Download
• Wilhelm M., Rieth M., Brandl M., Wibowo RA., Hock R., Wellmann P.:
  Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C
  In: Thin Solid Films 577 (2015), p. 88-93
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2015.01.049
  BibTeX: Download
• Zweschke A., Wellmann P.:
  Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation
  In: Thin Solid Films 582 (2015), p. 397-400
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.11.002
  BibTeX: Download
• Zweschke A., Wellmann P.:
  Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
  In: Energy Procedia 84 (2015), p. 86-92
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.299
  BibTeX: Download

2014

• Grivickas V., Gulbinas K., Jokubavicius V., Sun J., Karaliūnas M., Kamiyama S., Linnarsson MK., Kaiser M., Wellmann P., Syväjärvi M.:
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  In: IOP Conference Series: Materials Science and Engineering 56 (2014), Article No.: 012004
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012004
  BibTeX: Download
• Kaiser M., Schimmel S., Jokubavicius V., Linnarsson MK., Ou H., Syväjärvi M., Wellmann P.:
  Nucleation and growth of polycrystalline SiC
  In: IOP Conference Series: Materials Science and Engineering 56 (2014), Article No.: 012001
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012001
  BibTeX: Download
• Neubauer G., Salamon M., Uhlmann N., Wellmann P.:
  Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
  In: Materials Science Forum 778-780 (2014), p. 9-12
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.778-780.9
  BibTeX: Download
• Ou H., Ou Y., Argyraki A., Schimmel S., Kaiser M., Wellmann P., Linnarsson MK., Jokubavicius V., Sun J., Liljedahl R., Syväjärvi M.:
  Advances in wide bandgap SiC for optoelectronics
  In: European Physical Journal B 87 (2014)
  ISSN: 1434-6028
  DOI: 10.1140/epjb/e2014-41100-0
  BibTeX: Download
• Schimmel S., Kaiser M., Jokubavicius V., Ou Y., Hens P., Linnarsson MK., Sun J., Liljedahl R., Ou H., Syväjärvi M., Wellmann P.:
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  In: IOP Conference Series: Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012002
  BibTeX: Download
• Schimmel S., Künecke U., Baser HH., Steigerwald T., Hertweck B., Alt N., Schlücker E., Schwieger W., Wellmann P.:
  Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 11 (2014), p. 1439-1442
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201300656
  BibTeX: Download
• Schimmel S., Künecke U., Steigerwald T., Hertweck B., Alt N., Schlücker E., Wellmann P.:
  In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging
  German Conference on Crystal Growth (Halle, March 12, 2014 - March 14, 2014)
  BibTeX: Download
• Wellmann P., Syvaejaervi M., Ou H. (ed.):
  Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications, Proceedings of the E-MRS 2013 Spring Meeting, Symposium G
  2014
  (IOP Conference Series: Materials Science and Engineering, Vol. 56, Number 1)
  DOI: 10.1088/1757-899X/56/1/011001
  BibTeX: Download
• Wellmann P., Syväjärvi M., Ou H.:
  Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
  EMRS 2013 Spring Meeting, Symposium G (Strasbourg, May 27, 2013 - May 31, 2013)
  In: IOP Conf. Series: Materials Science and Engineering 56 (2014) 011001 2014
  DOI: 10.1088/1757-899X/56/1/011001
  BibTeX: Download
• Wibowo RA., Möckel S., Yoo HS., Hölzing A., Hock R., Wellmann P.:
  Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques
  In: Journal of Alloys and Compounds 588 (2014), p. 254-258
  ISSN: 0925-8388
  DOI: 10.1016/j.jallcom.2013.10.248
  BibTeX: Download

2013

• Benz F., Strunk HP., Schaab J., Künecke U., Wellmann P.:
  Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
  In: Journal of Applied Physics 114 (2013), Article No.: 073518
  ISSN: 0021-8979
  DOI: 10.1063/1.4818815
  BibTeX: Download
• Hupfer T., Hens P., Kaiser M., Jokubavicius V., Syväjärvi M., Wellmann P.:
  Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
  In: Materials Science Forum 740-742 (2013), p. 52-55
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.52
  BibTeX: Download
• Jokubavicius V., Kaiser M., Hens P., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
  Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates
  In: Materials Science Forum 740-742 (2013), p. 19-22
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.19
  BibTeX: Download
• Kaiser M., Hupfer T., Jokubavicius V., Schimmel S., Syväjärvi M., Ou Y., Ou H., Linnarsson MK., Wellmann P.:
  Polycrystalline SiC as source material for the growth of fluorescent SiC layers
  In: Materials Science Forum 740-742 (2013), p. 39-42
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.39
  BibTeX: Download
• Künecke U., Hölzing A., Jost S., Lechner R., Vogt H., Heiss A., Palm J., Hock R., Wellmann P.:
  Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing
  In: Thin Solid Films 535 (2013), p. 97-101
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.11.069
  BibTeX: Download
• Linnarsson MK., Kaiser M., Liljedahl R., Jokubavicius V., Ou Y., Wellmann P., Ou H., Syväjärvi M.:
  Lateral boron distribution in polycrystalline SiC source materials
  In: Materials Science Forum 740-742 (2013), p. 397-400
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.397
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• Möckel S., Hölzing A., Hock R., Wellmann P.:
  In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium
  In: Thin Solid Films 535 (2013), p. 133-137
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.11.081
  BibTeX: Download
• Neubauer G., Salamon M., Roider F., Uhlmann N., Wellmann P.:
  Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
  In: Materials Science Forum 740-742 (2013), p. 27-30
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.27
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• Ou Y., Jokubavicius V., Kaiser M., Wellmann P., Linnarsson MK., Yakimova R., Syväjärvi M., Ou H.:
  Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC
  In: Materials Science Forum 740-742 (2013), p. 1024-1027
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.1024
  BibTeX: Download
• Schimmel S., Kaiser M., Hens P., Jokubavicius V., Liljedahl R., Sun J., Yakimova R., Ou Y., Ou H., Linnarsson MK., Wellmann P., Syväjärvi M.:
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  In: Materials Science Forum 740-742 (2013), p. 185-188
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.185
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• Schuster M., Möckel S., Wibowo RA., Hock R., Wellmann P.:
  Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors
  In: Materials Research Society Symposium - Proceedings 1538 (2013), p. 203-208
  ISSN: 0272-9172
  DOI: 10.1557/opl.2013.980
  BibTeX: Download
• Sun J., Kamiyama S., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  In: Materials Science Forum 740-742 (2013), p. 315-318
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.315
  BibTeX: Download
• Wibowo RA., Möckel S., Yoo HS., Hetzner C., Hölzing A., Wellmann P., Hock R.:
  Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
  In: Materials Chemistry and Physics 142 (2013), p. 311-317
  ISSN: 0254-0584
  DOI: 10.1016/j.matchemphys.2013.07.021
  BibTeX: Download
• Wilhelm M., Kaiser M., Jokubavicius V., Syväjärvi M., Ou Y., Ou H., Wellmann P.:
  Photoluminescence topography of fluorescent SiC and its corresponding source crystals
  In: Materials Science Forum 740-742 (2013), p. 421-424
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.421
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• Zheng Q., Crocco J., Bensalah H., Wellmann P., Osvet A., Künecke U., Dierre F., Vela O., Perez J., Dieguez E.:
  Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
  In: Journal of Crystal Growth 381 (2013), p. 15-21
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2013.06.033
  BibTeX: Download

2012

• Hens P., Jokubavicius V., Liljedahl R., Wagner G., Yakimova R., Wellmann P., Syväjärvi M.:
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  In: Materials Letters 67 (2012), p. 300-302
  ISSN: 0167-577X
  DOI: 10.1016/j.matlet.2011.09.109
  BibTeX: Download
• Hens P., Müller J., Spiecker E., Wellmann P.:
  Defect structures at the silicon/3C-SiC interface
  In: Materials Science Forum 717-720 (2012), p. 423-426
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.717-720.423
  BibTeX: Download
• Hens P., Müller J., Wagner G., Liljedahl R., Yakimova R., Spiecker E., Wellmann P., Syväjärvi M.:
  Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  In: Materials Science Forum 717-720 (2012), p. 177-180
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.717-720.177
  BibTeX: Download
• Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
  Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
  In: Thin Solid Films 522 (2012), p. 2-6
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.10.177
  BibTeX: Download
• Jokubavicius V., Hens P., Liljedahl R., Sun JW., Kaiser M., Wellmann P., Sano S., Yakimova R., Kamiyama S., Syväjärvi M.:
  Effects of source material on epitaxial growth of fluorescent SiC
  In: Thin Solid Films 522 (2012), p. 7-10
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.10.176
  BibTeX: Download
• Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
  Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices
  In: Conference on Lasers and Electro-Optics (2012), Article No.: CF3J.2.
  ISSN: 2160-9020
  DOI: 10.1364/CLEO_SI.2012.CF3J.2
  BibTeX: Download
• Ou Y., Jokubavicius V., Hens P., Kaiser M., Wellmann P., Yakimova R., Syväjärvi M., Ou H.:
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  In: Optics Express 20 (2012), p. 7575-7579
  ISSN: 1094-4087
  DOI: 10.1364/OE.20.007575
  BibTeX: Download
• Syväjärvi M., Müller J., Sun JW., Grivickas V., Ou Y., Jokubavicius V., Hens P., Kaiser M., Ariyawong K., Gulbinas K., Liljedahl R., Linnarsson MK., Kamiyama S., Wellmann P., Spiecker E., Ou H.:
  Fluorescent SiC as a new material for white LEDs
  In: Physica Scripta T148 (2012), Article No.: 014002
  ISSN: 0031-8949
  DOI: 10.1088/0031-8949/2012/T148/014002
  BibTeX: Download
• Vasiliauskas R., Marinova M., Hens P., Wellmann P., Syvajarvi M., Yakimova R.:
  Nucleation Control of Cubic Silicon Carbide on 6H-Substrates
  In: Crystal Growth & Design 12 (2012), p. 197-204
  ISSN: 1528-7483
  DOI: 10.1021/cg200929r
  BibTeX: Download
• Wellmann P., Syväjärvi M., Kneissel M. (ed.):
  Engineering of Wide Bandgap Semiconductor Materials for Energy Saving, Proceedings of the E-MRS 2011 Spring Meeting, Symposium Q
  2012
  (Thin Solid Films, Vol. 522)
  DOI: 10.1016/j.tsf.2012.04.001
  BibTeX: Download
• Wellmann P., Syväjärvi M., Kneissel M., Wang R.:
  Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
  In: Thin Solid Films 522 (2012), p. 1-1
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.04.001
  BibTeX: Download
  (anderer)

2011

• Hens P., Mueller J., Fahlbusch L., Spiecker E., Wellmann P., Spiecker E.:
  Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy
  In: Materials Science Forum 679-680 (2011), p. 127-130
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.679-680.127
  BibTeX: Download
• Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
  The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction
  In: Thin Solid Films 519 (2011), p. 7197-7200
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2010.12.138
  BibTeX: Download
• Karpinski H., Sakwe A., Fried MJ., Bänsch E., Wellmann P.:
  Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
  In: Materials Science Forum 679-680 (2011), p. 277-281
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.679-680.277
  BibTeX: Download
• Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
  Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid
  In: Journal of Applied Physics 110 (2011), Article No.: 104301
  ISSN: 0021-8979
  DOI: 10.1063/1.3658634
  BibTeX: Download
• Maksimenko I., Wellmann P.:
  Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices
  In: Thin Solid Films 519 (2011), p. 5744-5747
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2010.12.209
  BibTeX: Download
• Maksimenko I., Wellmann P.:
  Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives
  In: Thin Solid Films 520 (2011), p. 1341-1347
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.04.142
  BibTeX: Download
• Richter H., Wellmann P. (ed.):
  From Semiconductors to New Energy – the PV Value added Chain, Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting
  2011
  (Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France)
  BibTeX: Download
• Wellmann P.:
  Kooperative Promotionen mit Fachhochschulen in Zusammenarbeit mit der technischen Fakultät der Universität Erlangen-Nürnberg; erschienen in „Ingenieurpromotion – Stärken und Qualitätssicherung, Beiträge eines gemeinsamen Symposiums von acatech, TU9, ARGE TU/TH und 4ing
  In: Horst Hippler (ed.): Ingenieurpromotion – Stärken und Qualitätssicherung, Berlin Heidelberg: Springer Verlag, 2011, p. 125-132 (acatech Diskussion)
  BibTeX: Download

2010

• Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
  Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)
  In: Materials Science Forum 645-648 (2010), p. 151-154
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.151
  BibTeX: Download
• Hock R., Konias K., Perdicaro LMS., Magerl A., Hens P., Wellmann P.:
  Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction
  In: Materials Science Forum 645-648 (2010), p. 29-32
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.29
  BibTeX: Download
• Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Hock R., Wellmann P.:
  Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content
  In: Materials Research Society Symposium - Proceedings 1165 (2010), p. 25-30
  ISSN: 0272-9172
  DOI: 10.1557/PROC-1165-M02-02
  BibTeX: Download
• Maksimenko I., Groß M., Königer T., Münstedt H., Wellmann P.:
  Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites
  In: Thin Solid Films 518 (2010), p. 2910-2915
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2009.10.151
  BibTeX: Download
• Oehlschläger F., Müller J., Künecke U., Hoelzing A., Schurr R., Hock R., Wellmann P.:
  Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
  In: Energy Procedia 2 (2010), p. 183-188
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2010.07.026
  BibTeX: Download
• Tang K., Künecke U., Oehlschläger F., Hölzing A., Schurr R., Hock R., Wellmann P.:
  Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
  In: Solar Energy Materials and Solar Cells 94 (2010), p. 1875-1879
  ISSN: 0927-0248
  DOI: 10.1016/j.solmat.2010.06.002
  BibTeX: Download

2009

• Groß M., Linse N., Maksimenko I., Wellmann P.:
  Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices
  In: Advanced Engineering Materials 11 (2009), p. 295-301
  ISSN: 1438-1656
  DOI: 10.1002/adem.200800292
  BibTeX: Download
• Hens P., Künecke U., Konias K., Hock R., Wellmann P.:
  Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
  In: Materials Science Forum 615-617 (2009), p. 11-14
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.11
  BibTeX: Download
• Hens P., Künecke U., Wellmann P.:
  Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  In: Materials Science Forum 600-603 (2009), p. 19-22
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.19
  BibTeX: Download
• Hens P., Syvaejaervi M., Oehlschläger F., Wellmann P., Yakimova R.:
  P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
  In: Materials Science Forum 615-617 (2009), p. 85-88
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.85
  BibTeX: Download
• Hölzing A., Schurr R., Schäfer H., Jaeger A., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
  Sulfo-selenization of metallic thin films of Cu, In and Cu-In
  In: Thin Solid Films 517 (2009), p. 2213-2217
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2008.10.089
  BibTeX: Download
• Oehlschläger F., Juillaguet S., Peyre H., Calmassel J., Wellmann P.:
  Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
  In: Materials Science Forum 615-617 (2009), p. 259-262
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.259
  BibTeX: Download
• Pons M., Nishizawa SI., Wellmann P., Blanquet E., Chaussende D., Dedulle J., Madar R.:
  Silicon carbide growth: C/Si ratio evaluation and modeling
  In: Materials Science Forum 600-603 (2009), p. 83-88
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.83
  BibTeX: Download
• Stockmeier M., Müller R., Sakwe A., Wellmann P., Magerl A.:
  On the lattice parameters of silicon carbide
  In: Journal of Applied Physics 105 (2009), Article No.: 033511
  ISSN: 0021-8979
  DOI: 10.1063/1.3074301
  BibTeX: Download
• Stockmeier M., Sakwe A., Hens P., Wellmann P., Hock R., Magerl A.:
  Thermal Expansion Coefficients of 6H Silicon Carbide
  In: Materials Science Forum 600-603 (2009), p. 517-520
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.517
  BibTeX: Download
• Wellmann P., Feng Z., Shi G. (ed.):
  Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen
  2009
  ISBN: 978-3-00-027314-8
  BibTeX: Download
• Wellmann P., Konias K., Hens P., Hock R., Magerl A.:
  In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
  In: Materials Science Forum 615-617 (2009), p. 23-26
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.23
  BibTeX: Download

2008

• Groß M., Maksimenko I., Faber H., Linse N., Wellmann P.:
  Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique
  11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008) (Boston, Massachusetts, June 1, 2008 - June 5, 2008)
  In: NSTI, Nano Science and Technology Institute (ed.): Nanotech 2008, Vol. 1-3 2008
  BibTeX: Download
• Sakwe A., Stockmeier M., Hens P., Müller R., Queren D., Künecke U., Konias K., Hock R., Magerl A., Pons M., Winnacker A., Wellmann P.:
  Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
  In: physica status solidi (b) 245 (2008), p. 1239-1256
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200743520
  BibTeX: Download
• Steeds JW., Sullivan W., Furkert SA., Evans GA., Wellmann P.:
  Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
  In: Physical Review B 77 (2008), Article No.: 195203
  ISSN: 1098-0121
  DOI: 10.1103/PhysRevB.77.195203
  BibTeX: Download
• Wellmann P., Müller R., Sakwe A., Künecke U., Hens P., Stockmeier M., Konias K., Hock R., Magerl A., Pons M.:
  Bulk growth of SiC
  In: Materials Research Society Symposium - Proceedings 1069 (2008), p. 3-14
  ISSN: 0272-9172
  DOI: 10.1557/PROC-1069-D01-01
  BibTeX: Download
• Wellmann P., Sakwe A., Oehlschläger F., Hoffmann V., Zeimer U., Knauer A.:
  Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
  In: Journal of Crystal Growth 310 (2008), p. 955-958
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2007.11.064
  BibTeX: Download
• Welte A., Waldauf C., Brabec CJ., Wellmann P.:
  Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
  In: Thin Solid Films 516 (2008), p. 7256-7259
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.12.025
  BibTeX: Download

2007

• Bathelt R., Buchhauser D., Gärditz C., Paetzold R., Wellmann P.:
  Light extraction from OLEDs for lighting applications through light scattering
  In: Organic Electronics 8 (2007), p. 293-299
  ISSN: 1566-1199
  DOI: 10.1016/j.orgel.2006.11.003
  BibTeX: Download
• Chaussende D., Wellmann P., Pons M.:
  Status of SiC bulk growth processes
  In: Journal of Physics D-Applied Physics 40 (2007), p. 6150-6158
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/40/20/S02
  BibTeX: Download
• Groß M., Winnacker A., Wellmann P.:
  Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
  In: Thin Solid Films 515 (2007), p. 8567-8572
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.03.136
  BibTeX: Download
• Jang YS., Sakwe A., Wellmann P., Juillaguet S., Peyre H., Camassel J., Steeds JW.:
  Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies
  In: Materials Science Forum 556-557 (2007), p. 13-16
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.556-557.13
  BibTeX: Download
• Konias K., Hock R., Stockmeier M., Wellmann P., Miller M., Ossege S., Magerl A.:
  In-situ X-ray measurements of defect generation during PVT growth of SiC
  In: Materials Science Forum 556-557 (2007), p. 267-270
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.556-557.267
  BibTeX: Download
• Sakwe A., Jang YS., Wellmann P.:
  Defect etching of non-polar and semi-polar faces in SiC
  In: Materials Science Forum 556-557 (2007), p. 243-246
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.556-557.243
  BibTeX: Download
• Sakwe A., Müller R., Wellmann P.:
  Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]
  In: Journal of Crystal Growth 299 (2007), p. 234-234
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2006.10.196
  BibTeX: Download
• Sakwe A., Wellmann P.:
  Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals
  In: Materials Science Forum 556-557 (2007), p. 263-266
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.556-557.263
  BibTeX: Download
• Wagner M., Mustafa E., Hahn S., Syväjärvi M., Yakimova R., Jang YS., Sakwe A., Wellmann P.:
  Contactless electrical defect characterization and topography of a-plane grown epitaxial layers
  In: Materials Science Forum 556-557 (2007), p. 327-330
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.556-557.327
  BibTeX: Download
• Wellmann P., Feng Z., Shi G. (ed.):
  Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai
  Shanghai: 2007
  ISBN: 978-7-5608-3614-0
  BibTeX: Download
• Wellmann P., Hens P., Sakwe A., Queren D., Müller R., Durst K., Göken M.:
  Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth
  In: Materials Science Forum 556-557 (2007), p. 259-262
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.556-557.259
  BibTeX: Download
• Wellmann P., Karl U., Kleber S., Schmitt H.:
  Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
  In: Journal of Applied Physics 101 (2007)
  ISSN: 0021-8979
  DOI: 10.1063/1.2743090
  BibTeX: Download
• Wellmann P., Pons M.:
  Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
  In: Journal of Crystal Growth 303 (2007), p. 337-341
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2006.11.328
  BibTeX: Download

2006

• Chaussende D., Wellmann P., Ucar M., Pons M., Madar R.:
  In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
  In: Materials Science Forum 527-529 (2006), p. 63-66
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.63
  BibTeX: Download
• Contreras S., Zielinski M., Konczewicz L., Blanc C., Juillaguet S., Müller R., Künecke U., Wellmann P., Camassel J.:
  Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
  In: Materials Science Forum 527-529 (2006), p. 633-636
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.633
  BibTeX: Download
• Künecke U., Wellmann P.:
  Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
  In: European Physical Journal-Applied Physics 34 (2006), p. 209-213
  ISSN: 1286-0042
  DOI: 10.1051/epjap:2006055
  BibTeX: Download
• Müller R., Künecke U., Queren D., Sakwe A., Wellmann P.:
  Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
  In: Chemical Vapor Deposition 12 (2006), p. 557-561
  ISSN: 0948-1907
  DOI: 10.1002/cvde.200606474
  BibTeX: Download
• Müller R., Künecke U., Thuaire A., Mermoux M., Pons M., Wellmann P.:
  Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering
  In: Physica Status Solidi C: Conferences 3 (2006), p. 558-561
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564148
  BibTeX: Download
• Müller R., Künecke U., Weingärtner R., Maier M., Wellmann P.:
  Anomalous charge carrier transport phenomena in highly aluminum doped SiC
  In: Physica Status Solidi C: Conferences 3 (2006), p. 554-557
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564150
  BibTeX: Download
• Nishizawa SI., Wellmann P., Pons M.:
  SiC epitaxial structure growth: evaluation and modeling
  In: M. Syväjärvi and R. Yakimova (ed.): Wide Band Gap Materials and New Developments, India: Transworld Research Network, 2006, p. 69-89
  BibTeX: Download
• Pons M., Wellmann P., Nishizawa SI., Blanquet E., Dedulle J., Chaussende D.:
  Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling
  In: Materials Research Society Symposium - Proceedings 911 (2006), Article No.: 0911-B04-02
  ISSN: 0272-9172
  DOI: 10.1557/PROC-0911-B04-02
  BibTeX: Download
• Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
  Electronic Raman Studies of Shallow Donors in Silicon Carbide
  In: Materials Science Forum 527-529 (2006), p. 579
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.579
  BibTeX: Download
• Sakwe A., Müller R., Masri P., Wellmann P.:
  Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals
  In: Physica Status Solidi C: Conferences 3 (2006), p. 562-566
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564152
  BibTeX: Download
• Sakwe A., Müller R., Queren D., Künecke U., Wellmann P.:
  Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 3 (2006), p. 567-570
  ISSN: 1862-6351
  DOI: 10.1002/pssc.200564153
  BibTeX: Download
• Sakwe A., Müller R., Wellmann P.:
  Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC
  In: Journal of Crystal Growth 289 (2006), p. 520-526
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2005.11.096
  BibTeX: Download
• Topic I., Sockel HG., Wellmann P., Göken M.:
  The influence of microstructure on the magnetic properties of WC/Co hardmetals
  In: Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 423 (2006), p. 306-312
  ISSN: 0921-5093
  DOI: 10.1016/j.msea.2006.02.018
  BibTeX: Download
• Wellmann P., Müller R., Pons M.:
  Modeling and experimental verification of SiC M-PVT bulk crystal growth
  In: Materials Science Forum 527-529 (2006), p. 75-78
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.75
  BibTeX: Download
• Wellmann P., Müller R., Queren D., Sakwe A., Pons M.:
  Vapor growth of SiC bulk crystals and its challenge of doping
  In: Surface & Coatings Technology 201 (2006), p. 4026-4031
  ISSN: 0257-8972
  DOI: 10.1016/j.surfcoat.2006.08.033
  BibTeX: Download
• Wellmann P., Pons M.:
  Silicon carbide CVD for electronic device applications
  In: Chemical Vapor Deposition 12 (2006), p. 463-464
  ISSN: 0948-1907
  DOI: 10.1002/cvde.200690018
  BibTeX: Download
• Wellmann P., Pons M. (ed.):
  Special Issue on Silicon Carbid CVD for Electronic Device Applications
  Weinheim: 2006
  (Special issue of the Journal of Chemical Vapor Deposition, Vol. 12)
  BibTeX: Download
• Wellmann P., Queren D., Müller R., Sakwe A., Künecke U.:
  Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
  In: Materials Science Forum 527-529 (2006), p. 79-82
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.79
  BibTeX: Download
• Wellmann P., Shi G., Feng Z. (ed.):
  Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai
  2006
  ISBN: 978-3-00-019576-1
  BibTeX: Download

2005

• Müller R., Künecke U., Weingärtner R., Schmitt H., Desperrier P., Wellmann P.:
  High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
  In: Materials Science Forum 483 (2005), p. 31-34
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.31
  BibTeX: Download
• Pons M., Blanquet E., Dedulle J., Ucar M., Wellmann P., Danielsson Ö., Ferret P., Di Cioccio L., Baillet F., Chaussende D., Madar R.:
  Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
  In: Materials Science Forum 483 (2005), p. 3-8
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.3
  BibTeX: Download
• Pons M., Nishizawa SI., Wellmann P., Ucar M., Blanquet E., Dedulle J., Baillet F., Chaussende D., Bernard C., Madar R.:
  Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics
  In: ECS Transactions 2005-9 (2005), p. 1-12
  ISSN: 1938-5862
  URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844440869&origin=inward
  BibTeX: Download
• Sakwe A., Herro ZG., Wellmann P.:
  Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
  In: Materials Science Forum 483 (2005), p. 283-286
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.283
  BibTeX: Download
• Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
  Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
  In: Materials Science Forum 483 (2005), p. 445-448
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.445
  BibTeX: Download
• Wellmann P.:
  Additional pipework opens up transistor applications for SiC
  In: Compound Semiconductor 11 (2005), p. 23-24
  ISSN: 1096-598X
  URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-18344397170&origin=inward
  BibTeX: Download
• Wellmann P., Desperrier P., Müller R., Straubinger T., Winnacker A., Baillet F., Blanquet E., Dedulle J., Pons M.:
  SiC single crystal growth by a modified physical vapor transport technique
  In: Journal of Crystal Growth 275 (2005), p. E555-E560
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.070
  BibTeX: Download
• Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
  In situ visualization of SiC physical vapor transport crystal growth
  In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.253
  BibTeX: Download
• Wellmann P., Müller R., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L.:
  Micro-optical characterization study of highly p-type doped SiC : Al wafers
  In: Materials Science Forum 483 (2005), p. 393-396
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.393
  BibTeX: Download
• Wellmann P., Straubinger T., Desperrier P., Müller R., Künecke U., Sakwe A., Schmitt H., Winnacker A., Blanquet E., Dedulle J., Pons M.:
  Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
  In: Materials Science Forum 483 (2005), p. 25-30
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.483-485.25
  BibTeX: Download
• Wellmann P., Straubinger T., Künecke U., Müller R., Sakwe A., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L., Camassel J.:
  Optical mapping of aluminum doped p-type SiC wafers
  In: physica status solidi (a) 202 (2005), p. 598-601
  ISSN: 1862-6300
  DOI: 10.1002/PSSA.200460436
  BibTeX: Download

2004

• Desperrier P., Müller R., Winnacker A., Wellmann P.:
  Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
  In: Materials Science Forum 457-460 (2004), p. 727-730
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.727
  BibTeX: Download
• Müller R., Desperrier P., Seitz C., Weißer M., Magerl A., Maier M., Winnacker A., Wellmann P.:
  In-situ Er-doping of SiC bulk single crystals
  In: Materials Science Forum 457-460 (2004), p. 723-726
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.723
  BibTeX: Download
• Weingärtner R., Wellmann P., Winnacker A.:
  On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
  In: Materials Science Forum 457-460 (2004), p. 645-648
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.645
  BibTeX: Download
• Weißer M., Seitz C., Wellmann P., Hock R., Magerl A.:
  Structural defects in SiC crystals investigated by high energy x-ray diffraction
  In: Materials Science Forum 457-460 (2004), p. 339-342
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.339
  BibTeX: Download
• Wellmann P., Albrecht A., Künecke U., Birkmann B., Müller G., Jurisch M.:
  Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
  In: European Physical Journal-Applied Physics 27 (2004), p. 357-361
  ISSN: 1286-0042
  DOI: 10.1051/epjap:2004041
  BibTeX: Download
• Wellmann P., Herro ZG., Sakwe A., Masri P., Bogdanov M., Karpov S., Kulik A., Ramm M., Makarov Y.:
  Analysis of graphitization during physical vapor transport growth of silicon carbide
  In: Materials Science Forum 457-460 (2004), p. 55-58
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.457-460.55
  BibTeX: Download

2003

• Bickermann M., Weingärtner R., Herro ZG., Hofmann HD., Künecke U., Wellmann P., Winnacker A.:
  Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
  In: Materials Science Forum 433-436 (2003), p. 337-340
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.337
  BibTeX: Download
• Herro ZG., Wellmann P., Püsche R., Hundhausen M., Ley L., Maier M., Masri P., Winnacker A.:
  Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
  In: Journal of Crystal Growth 258 (2003), p. 261-267
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
  BibTeX: Download
• Weingärtner R., Albrecht A., Wellmann P., Winnacker A.:
  Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
  In: Materials Science Forum 433-436 (2003), p. 341-344
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.341
  BibTeX: Download
• Weingärtner R., Bickermann M., Herro ZG., Künecke U., Sakwe A., Wellmann P., Winnacker A.:
  Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
  In: Materials Science Forum 433-436 (2003), p. 333-336
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.333
  BibTeX: Download
• Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
  Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), p. 9-12
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.9
  BibTeX: Download
• Wellmann P., Weingärtner R.:
  Determination of doping levels and their distribution in SiC by optical techniques
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 102 (2003), p. 262-268
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(02)00707-9
  BibTeX: Download

2002

• Birkmann B., Weingärtner R., Wellmann P., Wiedemann B., Müller G.:
  Analysis of silicon incorporation into VGF-grown GaAs
  In: Journal of Crystal Growth 237 (2002), p. 345-349
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)01935-2
  BibTeX: Download
• Straubinger T., Bickermann M., Rasp M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
  In: Materials Science Forum 389-393 (2002), p. 131-134
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.389-393.131
  BibTeX: Download
• Straubinger T., Bickermann M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
  In: Journal of Crystal Growth 240 (2002), p. 117-123
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(02)00917-X
  BibTeX: Download
• Weingärtner R., Wellmann P., Bickermann M., Hofmann HD., Straubinger T., Winnacker A.:
  Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
  In: Applied Physics Letters 80 (2002), p. 70-72
  ISSN: 0003-6951
  DOI: 10.1063/1.1430262
  BibTeX: Download
• Wellmann P., Herro ZG., Straubinger T., Winnacker A.:
  'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
  In: Materials Science Forum 389-393 (2002), p. 91-94
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.389-393.91
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• Wellmann P., Weingärtner R., Bickermann M., Straubinger T., Winnacker A.:
  Optical quantitative determination of doping levels and their distribution in SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(01)00976-X
  BibTeX: Download

2001

• Bickermann M., Hofmann HD., Rasp M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  Study of boron incorporation during PVT growth of p-type SiC crystals
  In: Materials Science Forum 353-356 (2001), p. 49-52
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.49
  BibTeX: Download
• Bickermann M., Hofmann HD., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  On the preparation of semi-insulating SiC bulk crystals by the PVT technique
  In: Applied Surface Science 184 (2001), p. 84-89
  ISSN: 0169-4332
  DOI: 10.1016/S0169-4332(01)00481-0
  BibTeX: Download
• Hofmann HD., Bickermann M., Ebling D., Epelbaum B., Kadinski L., Selder M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  SiC crystal growth from the vapor and liquid phase
  In: Materials Research Society Symposium - Proceedings 640 (2001), Article No.: H1.1
  ISSN: 0272-9172
  DOI: 10.1557/PROC-640-H1.1
  BibTeX: Download
• Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P., Hofmann HD.:
  Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
  In: Materials Science Forum 353-356 (2001), p. 65-68
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.65
  BibTeX: Download
• Straubinger T., Bickermann M., Hofmann HD., Weingärtner R., Wellmann P., Winnacker A.:
  Stability criteria for 4H-SiC bulk growth
  In: Materials Science Forum 353-356 (2001), p. 25-28
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.25
  BibTeX: Download
• Straubinger T., Wellmann P., Winnacker A.:
  Investigation of a PVT SiC-growth set-up modified by an additional gas flow
  In: Materials Science Forum 353-356 (2001), p. 33-36
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.33
  BibTeX: Download
• Weingärtner R., Bickermann M., Bushevoy S., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00599-7
  BibTeX: Download
• Weingärtner R., Bickermann M., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
  In: Materials Science Forum 353-356 (2001), p. 397-400
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.397
  BibTeX: Download
• Wellmann P.:
  Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg
  Aachen: Shaker Verlag, 2001
  (Berichte aus der Halbleitertechnik)
  ISBN: 3-8265-9075-9
  BibTeX: Download
• Wellmann P., Bushevoy S., Weingärtner R.:
  Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 352-356
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00598-5
  BibTeX: Download
• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
  In: Materials Science Forum 353-356 (2001), p. 11-14
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.11
  BibTeX: Download
• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process
  In: Materials Science Forum 225 (2001), p. 353-356
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.353-356.11
  URL: http://www.scientific.net/MSF.353-356.11
  BibTeX: Download
• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of source material on silicon carbide vapor transport growth process
  In: Journal of Crystal Growth 225 (2001), p. 312-316
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)00881-8
  BibTeX: Download

2000

• Selder M., Kadinski L., Durst F., Straubinger T., Hofmann HD., Wellmann P.:
  Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
  In: Materials Science Forum 338-342 (2000), p. 31-34
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.338-342.31
  BibTeX: Download
• Selder M., Kadinski L., Makarov Y., Durst F., Wellmann P., Straubinger T., Hofmann HD., Karpov S., Ramm M.:
  Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
  In: Journal of Crystal Growth 211 (2000), p. 333-338
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(99)00853-2
  BibTeX: Download
• Straubinger T., Bickermann M., Grau M., Hofmann HD., Kadinski L., Müller G., Selder M., Wellmann P., Winnacker A.:
  Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
  In: Materials Science Forum 338-342 (2000), p. 39-42
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.338-342.39
  BibTeX: Download
• Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
  In: Materials Science Forum 338-342 (2000), p. 71-74
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.338-342.71
  BibTeX: Download
• Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
  In: Journal of Crystal Growth 216 (2000), p. 263-272
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(00)00372-9
  BibTeX: Download
• Winnacker A., Hofmann HD., Wellmann P.:
  Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics
  Third Vietnam-German Workshop on Physics and Engineering (Ho Chi Minh City)
  In: Proceedings of the third Vietnam-German Workshop on Physics and Engineering 2000
  BibTeX: Download

1999

• Hofmann HD., Schmitt E., Bickermann M., Kölbl M., Wellmann P., Winnacker A.:
  Analysis on defect generation during the SiC bulk growth process
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials B61-62 (1999), p. 48-53
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(98)00443-7
  BibTeX: Download
• Wellmann P., Bickermann M., Grau M., Hofmann HD., Straubinger T., Winnacker A.:
  Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging
  In: Materials Research Society Symposium - Proceedings 572 (1999), p. 259-264
  ISSN: 0272-9172
  DOI: 10.1557/PROC-572-259
  BibTeX: Download
• Wellmann P., Garcia J., Feng JL., Petroff P.:
  Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs
  ICPS24th conference (Helsinki, August 14, 1999 - August 20, 1999)
  In: The physics of semiconductors – World Scientific, proceedings of ICPS24th conference (1999) 1999
  BibTeX: Download

1998

• Garcia J., Mankad T., Holtz O., Wellmann P., Petroff P.:
  Electronic states tuning of InAs self-assembled quantum dots
  In: Applied Physics Letters 72 (1998), p. 3172-3174
  ISSN: 0003-6951
  DOI: 10.1063/1.121583
  BibTeX: Download
• Schmidt K., Kunze U., Medeiros-Ribeiro G., Garcia J., Wellmann P., Petroff P.:
  Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots
  In: Physica E-Low-Dimensional Systems & Nanostructures 2 (1998), p. 627-631
  ISSN: 1386-9477
  DOI: 10.1016/S1386-9477(98)00128-3
  BibTeX: Download
• Wellmann P., Garcia J., Feng JL., Petroff P.:
  Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure
  In: Applied Physics Letters 73 (1998), p. 3291-3293
  ISSN: 0003-6951
  DOI: 10.1063/1.122748
  BibTeX: Download
• Wellmann P., Garcia J., Feng JL., Petroff P.:
  Giant magnetoresistance in a low-temperature grown GaAs with imbedded MnAs nanomagnets
  Physics of Microstructured Semiconductors
  In: Physics of Microstructured Semiconductors, Vol.6 1998
  BibTeX: Download
• Wellmann P., Schoenfeld W., Garcia J., Petroff P.:
  Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
  In: Journal of Electronic Materials 27 (1998), p. 1030-1033
  ISSN: 0361-5235
  DOI: 10.1007/s11664-998-0158-4
  BibTeX: Download

1997

• Van Esch A., Van Bockstal L., De Boeck J., Verbanck G., Van Steenbergen A., Wellmann P., Grietens B., Bogaerts R., Herlach F., Borghs G.:
  Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
  In: Physical Review B 56 (1997), p. 13103-13112
  ISSN: 1098-0121
  BibTeX: Download
• Wellmann P., Feng JL., Garcia J., Petroff P.:
  Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation
  In: Materials Research Society Symposium - Proceedings 475 (1997), p. 49-54
  ISSN: 0272-9172
  DOI: 10.1557/PROC-475-49
  BibTeX: Download
• Wellmann P., Garcia J., Feng JL., Petroff P.:
  Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs
  In: Applied Physics Letters 71 (1997), p. 2532-2534
  ISSN: 0003-6951
  DOI: 10.1063/1.120109
  BibTeX: Download

1996

• Wellmann P., Winnacker A., Pensl G.:
  On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP
  In: Materials Research Society Symposium - Proceedings 422 (1996), p. 255-266
  ISSN: 0272-9172
  DOI: 10.1557/PROC-422-255
  BibTeX: Download

1995

• Burchard A., Deicher M., Forkel-Wirth D., Freidinger J., Kerle T., Magerle R., Pfeiffer W., Prost W., Wellmann P., Winnacker A.:
  Acceptor-hydrogen interaction in ternary III-V semiconductors
  In: Materials Science Forum 196-201 (1995), p. 987-991
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.196-201.987
  BibTeX: Download

1994

• Waldmüller S., Lang M., Wellmann P., Winnacker A.:
  Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy
  IEEE, 6th International Conference on InP and Related Materials (Santa Barbara, CA, March 27, 1994 - March 31, 1994)
  In: IEEE (ed.): Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) 1994
  DOI: 10.1109/ICIPRM.1994.328209
  BibTeX: Download