Prof. Dr.-Ing. Peter Wellmann - Publications

• Job title: Projektleitung Forschungsgruppe CGL (Crystal Growth Lab)
• Organization: Department of Materials Science and Engineering
• Working group: Chair of Materials for Electronics and Energy Technology
• Phone number: +49 9131 85-27635
• Fax number: +49 9131 85-28495
• Email: peter.wellmann@fau.de
• Website: http://crystals.techfak.fau.de/
• Address:
  
  Martensstr. 7
  91058 Erlangen
  Room 392
• Office hours: Room 3.92, Terminabsprache per Email (peter.wellmann@fau.de)

Publications

2018

• Schimmel S., Duchstein P., Steigerwald T., Kimmel AC., Schlücker E., Zahn D., Niewa R., Wellmann P.:
  In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
  In: Journal of Crystal Growth 498 (2018), p. 214-223
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2018.06.024
  URL: https://api.elsevier.com/content/abstract/scopus_id/85049305230
  BibTeX:
• Arzig M., Salamon M., Uhlmann N., Johansen BA., Wellmann P.:
  Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
  In: Materials Science Forum 924 (2018), p. 245-248
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.924.245
  URL: https://api.elsevier.com/content/abstract/scopus_id/85049050580
  BibTeX:
• Fahlbusch L., Wellmann P.:
  Solution Growth of Silicon Carbide Using the Vertical Bridgman Method
  In: Crystal Research and Technology (2018)
  ISSN: 0232-1300
  DOI: 10.1002/crat.201800019
  URL: https://api.elsevier.com/content/abstract/scopus_id/85046091039
  BibTeX:
• La Via F., Severino A., Anzalone R., Bongiorno C., Litrico G., Mauceri M., Schöler M., Schuh P., Wellmann P.:
  From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
  In: Materials Science in Semiconductor Processing 78 (2018), p. 57-68
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2017.12.012
  URL: http://api.elsevier.com/content/abstract/scopus_id/85040923654
  BibTeX: Download
• Schuster M., Sisterhenn P., Graf L., Wellmann P.:
  Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques
  In: International Journal of Nanoparticle Research 2 (2018)
  URL: http://escipub.com/ijnr-2017-12-1501/
  BibTeX: Download

2017

• Schuster M., Groß S., Roider F., Maksimenko I., Wellmann P.:
  Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires
  In: International Journal of Nanoparticles and Nanotechnology 3 (2017)
  URL: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
  BibTeX: Download
• Wellmann P.:
  Materials-Related Solutions for Industry
  In: Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (ed.): Materials Innovation for the global circular economy and sustainable society, 2017 (WORLD MATERIALS SUMMITS, Vol.6)
  BibTeX:
• Wilhelm M., Syväjärvi M., Wellmann P.:
  Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence
  In: Advanced Materials Proceedings 2 (2017), p. 769-773
  ISSN: 2002-4428
  DOI: 10.5185/amp.2017/415
  BibTeX: Download
• Yakimova R., Ivanov IG., Vines L., Linnarsson MK., Gällström A., Giannazzo F., Roccaforte F., Wellmann P., Syväjärvi M., Jokubavicius V.:
  Growth, defects and doping of 3C-SiC on hexagonal polytypes
  In: ECS Journal of Solid State Science and Technology 6 (2017), p. P741-P745
  ISSN: 2162-8769
  DOI: 10.1149/2.0281710jss
  URL: http://api.elsevier.com/content/abstract/scopus_id/85033803775
  BibTeX: Download
• Schöler M., Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers
  In: Advanced Materials Proceedings 2 (2017), p. 774-778
  ISSN: 2002-4428
  DOI: 10.5185/amp.2017/419
  BibTeX: Download
• Wellmann P.:
  Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond
  In: Zeitschrift fur Anorganische und Allgemeine Chemie 643 (2017), p. 1312-1322
  ISSN: 1521-3749
  DOI: 10.1002/zaac.201700270
  URL: http://dx.doi.org/10.1002/zaac.201700270
  BibTeX: Download
• Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
  Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
  In: Journal of Crystal Growth 479 (2017), p. 59-66
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.027
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85030245162&origin=inward
  BibTeX: Download
• Schuh P., Schöler M., Wilhelm M., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
  In: Journal of Crystal Growth 478 (2017), p. 159-162
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.002
  URL: http://api.elsevier.com/content/abstract/scopus_id/85029408503
  BibTeX: Download
• Häusler J., Schimmel S., Wellmann P., Schnick W.:
  Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
  In: Chemistry - A European Journal 23 (2017), p. 12275-12282
  ISSN: 0947-6539
  DOI: 10.1002/chem.201701081
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85019461382&origin=inward
  BibTeX: Download
• Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
  3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers
  In: Materials Science Forum 897 (2017), p. 15-18
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.15
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020070800∨igin=inward
  BibTeX: Download
• Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
  Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates
  In: Journal of Materials Science: Materials in Electronics (2017), p. 1-9
  ISSN: 1573-482X
  DOI: 10.1007/s10854-017-6467-8
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85011659606∨igin=inward
  BibTeX: Download
• Schuh P., Arzig M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Growing bulk-like 3C-SiC from seeding material produced by CVD
  In: Physica Status Solidi (A) Applications and Materials Science (2017)
  ISSN: 1862-6319
  DOI: 10.1002/pssa.201600429
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85013894698∨igin=inward
  BibTeX: Download

2016

• Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
  Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
  In: Journal of Materials Science: Materials in Electronics 1-9 (2016), p. 506-511
  ISSN: 1573-482X
  DOI: 10.1109/PVSC.2016.7749646
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85003454677∨igin=inward
  BibTeX: Download
• Syväjärvi M., Ma Q., Jokubavicius V., Galeckas A., Sun J., Liu X., Jansson M., Wellmann P., Linarsson M., Runde P., Johansen BA., Thøgersen A., Diplas S., Carvalho PA., Løvvik OM., Wright DN., Azarov AY., Svensson BG.:
  Cubic silicon carbide as a potential photovoltaic material
  In: Solar Energy Materials and Solar Cells 145 (2016), p. 104-108
  ISSN: 0927-0248
  DOI: 10.1016/j.solmat.2015.08.029
  BibTeX: Download
• Sun J., Jokubavicius V., Gao L., Booker I., Jansson M., Liu X., Hofmann JP., Hensen EJ., Linnarsson MK., Wellmann P., Ramiro I., Marti A., Yakimova R., Syväjärvi M.:
  Solar driven energy conversion applications based on 3C-SiC
  In: Materials Science Forum 858 (2016), p. 1028-1031
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.1028
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971577103∨igin=inward
  BibTeX: Download
• Schuh P., Vecera P., Hirsch A., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates
  In: Materials Science Forum 858 (2016), p. 89-92
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.89
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971507163∨igin=inward
  BibTeX: Download
• Wellmann P., Fahlbusch L., Salamon M., Uhlmann N.:
  Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
  In: Materials Science Forum 858 (2016), p. 49-52
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.49
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971530349∨igin=inward
  BibTeX: Download
• Schuster M., Wernicke T., Möckel S., Wellmann P.:
  Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions
  In: International Journal of Nanoparticles and Nanotechnology 2:006 (2016)
  URL: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
  BibTeX: Download
• Fahlbusch L., Schöler M., Mattle P., Schnitzer S., Khodamoradi H., Iwamoto N., Svensson BG., Wellmann P.:
  High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
  In: Materials Science Forum 858 (2016), p. 33-36
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.33
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971537155∨igin=inward
  BibTeX: Download
• Schimmel S., Künecke U., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
  Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
  In: Journal of Crystal Growth 456 (2016), p. 33-42
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2016.08.067
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84994807597&origin=inward
  BibTeX: Download
• Salamon M., Reisinger S., Schlechter T., Schmitt M., Hofmann T., Uhlmann N., Schug S., Arlt W., Fahlbusch L., Arzig M., Wellmann P.:
  X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry
  WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY (Iguassu Falls, 09/26/2016 - 09/29/2016)
  URL: http://www.isipt.org/world-congress/8.html
  BibTeX: Download

2015

• Wilhelm M., Beck F., Wellmann P.:
  Towards the growth of SiGeC epitaxial layers for the application in Si solar cells
  In: Energy Procedia 84 (2015), p. 236-241
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.319
  BibTeX: Download
• Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
  Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2Solar Cell Absorber Layer
  In: Energy Procedia 84 (2015), p. 62-70
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.296
  BibTeX: Download
• Zweschke A., Wellmann P.:
  Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
  In: Energy Procedia 84 (2015), p. 86-92
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.299
  BibTeX: Download
• Jokubavicius V., Yazdi GR., Liljedahl R., Ivanov IG., Sun J., Liu X., Schuh P., Wilhelm M., Wellmann P., Yakimova R., Syväjärvi M.:
  Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
  In: Crystal Growth & Design 15 (2015), p. 2940-2947
  ISSN: 1528-7483
  DOI: 10.1021/acs.cgd.5b00368
  BibTeX: Download
• Rankl D., Jokubavicius V., Syväjärvi M., Wellmann P.:
  Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
  In: Materials Science Forum 821-823 (2015), p. 77-80
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.821-823.77
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84950314397∨igin=inward
  BibTeX: Download
• Schimmel S., Lindner M., Steigerwald T., Hertweck B., Richter TM., Künecke U., Alt N., Niewa R., Schlücker E., Wellmann P.:
  Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
  In: Journal of Crystal Growth 418 (2015), p. 64-69
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2015.02.020
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84924692058&origin=inward
  BibTeX: Download
• Möckel S., Wernicke T., Arzig M., Köder P., Brandl M., Ahmad R., Distaso M., Peukert W., Hock R., Wellmann P.:
  Low temperature formation of CuIn1 - xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors
  In: Thin Solid Films 582 (2015), p. 60-68
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.11.060
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84926523996&origin=inward
  BibTeX: Download
• Künecke U., Hetzner C., Möckel S., Yoo H., Hock R., Wellmann P.:
  Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence
  In: Thin Solid Films 582 (2015), p. 387-391
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.10.063
  BibTeX: Download
• Wilhelm M., Rieth M., Brandl M., Wibowo RA., Hock R., Wellmann P.:
  Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C
  In: Thin Solid Films 577 (2015), p. 88-93
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2015.01.049
  BibTeX: Download
• Zweschke A., Wellmann P.:
  Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation
  In: Thin Solid Films 582 (2015), p. 397-400
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.11.002
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84926435466&origin=inward
  BibTeX: Download
• Wellmann P., Neubauer G., Fahlbusch L., Salamon M., Uhlmann N.:
  Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
  In: Crystal Research and Technology 50 (2015), p. 2-9
  ISSN: 0232-1300
  DOI: 10.1002/crat.201400216
  BibTeX: Download
• Beier M., Trempa M., Seebeck J., Reimann C., Wellmann P., Gründig-Wendrock B., Friedrich J., Dadzis K., Sylla L., Richter T.:
  FEEDSTOCK RECHARGING DURING DIRECTIONAL SOLIDIFICATION OF
  SILICON INGOTS FOR PV APPLICATIONS
  29th European Photovoltaic Solar Energy Conference and Exhibition (Amsterdam, 09/22/2014 - 09/26/2014)
  DOI: 10.4229/EUPVSEC20142014-2AV.1.11
  BibTeX:
• Hertweck B., Schimmel S., Steigerwald T., Alt N., Wellmann P., Schlücker E.:
  Ceramic liner technology for ammonoacidic synthesis
  In: Journal of Supercritical Fluids 99 (2015), p. 76-87
  ISSN: 0896-8446
  DOI: 10.1016/j.supflu.2015.01.017
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84924747256&origin=inward
  BibTeX: Download

2014

• Ou H., Ou Y., Argyraki A., Schimmel S., Kaiser M., Wellmann P., Linnarsson MK., Jokubavicius V., Sun J., Liljedahl R., Syväjärvi M.:
  Advances in wide bandgap SiC for optoelectronics
  In: European Physical Journal B 87 (2014)
  ISSN: 1434-6028
  DOI: 10.1140/epjb/e2014-41100-0
  BibTeX: Download
• Neubauer G., Salamon M., Uhlmann N., Wellmann P.:
  Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
  In: Materials Science Forum 778-780 (2014), p. 9-12
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.778-780.9
  BibTeX: Download
• Schimmel S., Künecke U., Baser HH., Steigerwald T., Hertweck B., Alt N., Schlücker E., Schwieger W., Wellmann P.:
  Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 11 (2014), p. 1439-1442
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201300656
  BibTeX: Download
• Schimmel S., Kaiser M., Jokubavicius V., Ou Y., Hens P., Linnarsson MK., Sun J., Liljedahl R., Ou H., Syväjärvi M., Wellmann P.:
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  In: IOP Conference Series : Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012002
  BibTeX: Download
• Kaiser M., Schimmel S., Jokubavicius V., Linnarsson MK., Ou H., Syväjärvi M., Wellmann P.:
  Nucleation and growth of polycrystalline SiC
  In: IOP Conference Series : Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012001
  BibTeX: Download
• Wibowo RA., Möckel S., Yoo H., Hölzing A., Hock R., Wellmann P.:
  Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques
  In: Journal of Alloys and Compounds 588 (2014), p. 254-258
  ISSN: 0925-8388
  DOI: 10.1016/j.jallcom.2013.10.248
  BibTeX: Download
• Grivickas V., Gulbinas K., Jokubavicius V., Sun J., Karaliūnas M., Kamiyama S., Linnarsson MK., Kaiser M., Wellmann P., Syväjärvi M.:
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  In: IOP Conference Series : Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012004
  BibTeX: Download
• Wellmann P., Syväjärvi M., Ou H.:
  Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
  EMRS 2013 Spring Meeting, Symposium G (Strasbourg, 05/27/2013 - 05/31/2013)
  DOI: 10.1088/1757-899X/56/1/011001
  BibTeX: Download

2013

• Wibowo RA., Möckel S., Yoo H., Hetzner C., Hölzing A., Wellmann P., Hock R.:
  Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
  In: Materials Chemistry and Physics 142 (2013), p. 311-317
  ISSN: 0254-0584
  DOI: 10.1016/j.matchemphys.2013.07.021
  BibTeX: Download
• Zheng Q., Crocco J., Bensalah H., Wellmann P., Osvet A., Künecke U., Dierre F., Vela O., Perez J., Dieguez E.:
  Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
  In: Journal of Crystal Growth 381 (2013), p. 15-21
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2013.06.033
  BibTeX: Download
• Benz F., Strunk HP., Schaab J., Künecke U., Wellmann P.:
  Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
  In: Journal of Applied Physics 114 (2013)
  ISSN: 0021-8979
  DOI: 10.1063/1.4818815
  BibTeX: Download
• Schuster M., Möckel S., Wibowo RA., Hock R., Wellmann P.:
  Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors
  In: Materials Research Society Symposium - Proceedings 1538 (2013), p. 203-208
  ISSN: 0272-9172
  DOI: 10.1557/opl.2013.980
  BibTeX: Download
• Künecke U., Hölzing A., Jost S., Lechner R., Vogt H., Heiss A., Palm J., Hock R., Wellmann P.:
  Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing
  In: Thin Solid Films 535 (2013), p. 97-101
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.11.069
  BibTeX: Download
• Schimmel S., Kaiser M., Hens P., Jokubavicius V., Liljedahl R., Sun J., Yakimova R., Ou Y., Ou H., Linnarsson MK., Wellmann P., Syväjärvi M.:
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  In: Materials Science Forum 740-742 (2013), p. 185-188
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.185
  BibTeX: Download
• Kaiser M., Hupfer T., Jokubavicius V., Schimmel S., Syväjärvi M., Ou Y., Ou H., Linnarsson MK., Wellmann P.:
  Polycrystalline SiC as source material for the growth of fluorescent SiC layers
  In: Materials Science Forum 740-742 (2013), p. 39-42
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.39
  BibTeX: Download
• Wilhelm M., Kaiser M., Jokubavicius V., Syväjärvi M., Ou Y., Ou H., Wellmann P.:
  Photoluminescence topography of fluorescent SiC and its corresponding source crystals
  In: Materials Science Forum 740-742 (2013), p. 421-424
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.421
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• Jokubavicius V., Kaiser M., Hens P., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
  Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates
  In: Materials Science Forum 740-742 (2013), p. 19-22
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.19
  BibTeX: Download
• Hupfer T., Hens P., Kaiser M., Jokubavicius V., Syväjärvi M., Wellmann P.:
  Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
  In: Materials Science Forum 740-742 (2013), p. 52-55
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.52
  BibTeX: Download
• Sun J., Kamiyama S., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  In: Materials Science Forum 740-742 (2013), p. 315-318
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.315
  BibTeX: Download
• Linnarsson MK., Kaiser M., Liljedahl R., Jokubavicius V., Ou Y., Wellmann P., Ou H., Syväjärvi M.:
  Lateral boron distribution in polycrystalline SiC source materials
  In: Materials Science Forum 740-742 (2013), p. 397-400
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.397
  BibTeX: Download
• Möckel S., Hölzing A., Hock R., Wellmann P.:
  In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium
  In: Thin Solid Films 535 (2013), p. 133-137
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.11.081
  BibTeX: Download
• Ou Y., Jokubavicius V., Kaiser M., Wellmann P., Linnarsson MK., Yakimova R., Syväjärvi M., Ou H.:
  Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC
  In: Materials Science Forum 740-742 (2013), p. 1024-1027
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.1024
  BibTeX: Download
• Neubauer G., Salamon M., Roider F., Uhlmann N., Wellmann P.:
  Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
  In: Materials Science Forum 740-742 (2013), p. 27-30
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.740-742.27
  BibTeX: Download

2012

• Wellmann P., Syväjärvi M., Kneissel M., Wang R.:
  Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
  In: Thin Solid Films 522 (2012), p. 1-1
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.04.001
  BibTeX: Download
• Jokubavicius V., Hens P., Liljedahl R., Sun JW., Kaiser M., Wellmann P., Sano S., Yakimova R., Kamiyama S., Syväjärvi M.:
  Effects of source material on epitaxial growth of fluorescent SiC
  In: Thin Solid Films 522 (2012), p. 7-10
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.10.176
  BibTeX: Download
• Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
  Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
  In: Thin Solid Films 522 (2012), p. 2-6
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.10.177
  BibTeX: Download
• Hens P., Müller J., Wagner G., Liljedahl R., Yakimova R., Spiecker E., Wellmann P., Syväjärvi M.:
  Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  In: Materials Science Forum 717-720 (2012), p. 177-180
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.717-720.177
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84861352727∨igin=inward
  BibTeX: Download
• Ou Y., Jokubavicius V., Hens P., Kaiser M., Wellmann P., Yakimova R., Syväjärvi M., Ou H.:
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  In: Optics Express 20 (2012), p. 7575-7579
  ISSN: 1094-4087
  DOI: 10.1364/OE.20.007575
  BibTeX: Download
• Syväjärvi M., Müller J., Sun JW., Grivickas V., Ou Y., Jokubavicius V., Hens P., Kaiser M., Ariyawong K., Gulbinas K., Liljedahl R., Linnarsson MK., Kamiyama S., Wellmann P., Spiecker E., Ou H.:
  Fluorescent SiC as a new material for white LEDs
  In: Physica Scripta T148 (2012)
  ISSN: 0031-8949
  DOI: 10.1088/0031-8949/2012/T148/014002
  BibTeX: Download
• Hens P., Jokubavicius V., Liljedahl R., Wagner G., Yakimova R., Wellmann P., Syväjärvi M.:
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  In: Materials Letters 67 (2012), p. 300-302
  ISSN: 0167-577X
  DOI: 10.1016/j.matlet.2011.09.109
  BibTeX: Download
• Vasiliauskas R., Marinova M., Hens P., Wellmann P., Syvajarvi M., Yakimova R.:
  Nucleation Control of Cubic Silicon Carbide on 6H-Substrates
  In: Crystal Growth & Design 12 (2012), p. 197-204
  ISSN: 1528-7483
  DOI: 10.1021/cg200929r
  BibTeX: Download
• Hens P., Müller J., Spiecker E., Wellmann P.:
  Defect structures at the silicon/3C-SiC interface
  In: Materials Science Forum 717-720 (2012), p. 423-426
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.717-720.423
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84861410216∨igin=inward
  BibTeX: Download
• Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
  Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices
  In: Conference on Lasers and Electro-Optics (2012)
  ISSN: 2160-9020
  DOI: 10.1364/CLEO_SI.2012.CF3J.2
  BibTeX: Download

2011

• Maksimenko I., Wellmann P.:
  Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives
  In: Thin Solid Films 520 (2011), p. 1341-1347
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.04.142
  BibTeX: Download
• Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
  Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid
  In: Journal of Applied Physics 110 (2011)
  ISSN: 0021-8979
  DOI: 10.1063/1.3658634
  BibTeX:
• Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
  The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction
  In: Thin Solid Films 519 (2011), p. 7197-7200
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2010.12.138
  BibTeX: Download
• Maksimenko I., Wellmann P.:
  Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices
  In: Thin Solid Films 519 (2011), p. 5744-5747
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2010.12.209
  BibTeX: Download
• Karpinski H., Sakwe A., Fried MJ., Bänsch E., Wellmann P.:
  Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
  In: Materials Science Forum 679-680 (2011), p. 277-281
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.679-680.277
  BibTeX: Download
• Wellmann P.:
  Kooperative Promotionen mit Fachhochschulen in Zusammenarbeit mit der technischen Fakultät der Universität Erlangen-Nürnberg; erschienen in „Ingenieurpromotion – Stärken und Qualitätssicherung, Beiträge eines gemeinsamen Symposiums von acatech, TU9, ARGE TU/TH und 4ing
  In: Horst Hippler (ed.): Ingenieurpromotion – Stärken und Qualitätssicherung, Berlin Heidelberg: Springer Verlag, 2011, p. 125-132 (acatech Diskussion)
  BibTeX:
• Hens P., Mueller J., Fahlbusch L., Spiecker E., Wellmann P., Spiecker E.:
  Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy
  In: Materials Science Forum 679-680 (2011), p. 127-130
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.679-680.127
  BibTeX: Download
• Wellmann P., Richter H. (ed.):
  From Semiconductors to New Energy – the PV Value added Chain2011
  (Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France)
  BibTeX:

2010

• Tang K., Künecke U., Oehlschläger F., Hölzing A., Schurr R., Hock R., Wellmann P.:
  Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
  In: Solar Energy Materials and Solar Cells 94 (2010), p. 1875-1879
  ISSN: 0927-0248
  DOI: 10.1016/j.solmat.2010.06.002
  BibTeX: Download
• Maksimenko I., Groß M., Königer T., Münstedt H., Wellmann P.:
  Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites
  In: Thin Solid Films 518 (2010), p. 2910-2915
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2009.10.151
  BibTeX: Download
• Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Hock R., Wellmann P.:
  Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content
  In: Materials Research Society Symposium - Proceedings 1165 (2010), p. 25-30
  ISSN: 0272-9172
  DOI: 10.1557/PROC-1165-M02-02
  BibTeX: Download
• Hock R., Konias K., Perdicaro LMS., Magerl A., Hens P., Wellmann P.:
  Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction
  In: Materials Science Forum 645-648 (2010), p. 29-32
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.29
  BibTeX: Download
• Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
  Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)
  In: Materials Science Forum 645-648 (2010), p. 151-154
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.151
  BibTeX: Download
• Oehlschläger F., Müller J., Künecke U., Hoelzing A., Schurr R., Hock R., Wellmann P.:
  Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
  In: Energy Procedia 2 (2010), p. 183-188
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2010.07.026
  BibTeX: Download

2009

• Groß M., Linse N., Maksimenko I., Wellmann P.:
  Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices
  In: Advanced Engineering Materials 11 (2009), p. 295-301
  ISSN: 1438-1656
  DOI: 10.1002/adem.200800292
  BibTeX: Download
• Hölzing A., Schurr R., Schäfer H., Jaeger A., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
  Sulfo-selenization of metallic thin films of Cu, In and Cu-In
  In: Thin Solid Films 517 (2009), p. 2213-2217
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2008.10.089
  BibTeX: Download
• Stockmeier M., Müller R., Sakwe A., Wellmann P., Magerl A.:
  On the lattice parameters of silicon carbide
  In: Journal of Applied Physics 105 (2009)
  ISSN: 0021-8979
  DOI: 10.1063/1.3074301
  BibTeX: Download
• Stockmeier M., Sakwe A., Hens P., Wellmann P., Hock R., Magerl A.:
  Thermal Expansion Coefficients of 6H Silicon Carbide
  In: Materials Science Forum 600-603 (2009), p. 517-520
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.517
  BibTeX: Download
• Pons M., Nishizawa SI., Wellmann P., Blanquet E., Chaussende D., Dedulle J., Madar R.:
  Silicon carbide growth: C/Si ratio evaluation and modeling
  In: Materials Science Forum 600-603 (2009), p. 83-88
  ISSN: 0255-5476
  DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.83
  BibTeX:
• Oehlschläger F., Juillaguet S., Peyre H., Calmassel J., Wellmann P.:
  Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
  In: Materials Science Forum 615-617 (2009), p. 259-262
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.259
  BibTeX: Download
• Hens P., Syvaejaervi M., Oehlschläger F., Wellmann P., Yakimova R.:
  P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
  In: Materials Science Forum 615-617 (2009), p. 85-88
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.85
  BibTeX: Download
• Wellmann P., Konias K., Hens P., Hock R., Magerl A.:
  In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
  In: Materials Science Forum 615-617 (2009), p. 23-26
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.23
  BibTeX: Download
• Hens P., Künecke U., Konias K., Hock R., Wellmann P.:
  Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
  In: Materials Science Forum 615-617 (2009), p. 11-14
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.615-617.11
  BibTeX: Download
• Hens P., Künecke U., Wellmann P.:
  Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  In: Materials Science Forum 600-603 (2009), p. 19-22
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.19
  BibTeX: Download

2008

• Welte A., Waldauf C., Brabec CJ., Wellmann P.:
  Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
  In: Thin Solid Films 516 (2008), p. 7256-7259
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.12.025
  BibTeX: Download
• Sakwe A., Stockmeier M., Hens P., Müller R., Queren D., Künecke U., Konias K., Hock R., Magerl A., Pons M., Winnacker A., Wellmann P.:
  Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
  In: Physica Status Solidi B-Basic Solid State Physics 245 (2008), p. 1239-1256
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200743520
  BibTeX: Download
• Steeds JW., Sullivan W., Furkert SA., Evans GA., Wellmann P.:
  Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
  In: Physical Review B 77 (2008)
  ISSN: 1098-0121
  DOI: 10.1103/PhysRevB.77.195203
  BibTeX: Download
• Wellmann P., Sakwe A., Oehlschläger F., Hoffmann V., Zeimer U., Knauer A.:
  Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
  In: Journal of Crystal Growth 310 (2008), p. 955-958
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2007.11.064
  BibTeX: Download
• Groß M., Maksimenko I., Faber H., Linse N., Wellmann P.:
  Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique
  11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008) (Boston, Massachusetts, 06/01/2008 - 06/05/2008)
  BibTeX: Download
• Wellmann P., Müller R., Sakwe A., Künecke U., Hens P., Stockmeier M., Konias K., Hock R., Magerl A., Pons M.:
  Bulk growth of SiC
  2008 MRS Spring Meeting (San Francisco, California, 03/24/2008 - 03/28/2008)
  DOI: 10.1557/PROC-1069-D01-01
  BibTeX: Download

2007

• Chaussende D., Wellmann P., Pons M.:
  Status of SiC bulk growth processes
  In: Journal of Physics D-Applied Physics 40 (2007), p. 6150-6158
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/40/20/S02
  BibTeX: Download
• Groß M., Winnacker A., Wellmann P.:
  Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
  In: Thin Solid Films 515 (2007), p. 8567-8572
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.03.136
  BibTeX: Download
• Bathelt R., Buchhauser D., Gärditz C., Paetzold R., Wellmann P.:
  Light extraction from OLEDs for lighting applications through light scattering
  In: Organic Electronics 8 (2007), p. 293-299
  ISSN: 1566-1199
  DOI: 10.1016/j.orgel.2006.11.003
  BibTeX: Download
• Wellmann P., Karl U., Kleber S., Schmitt H.:
  Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
  In: Journal of Applied Physics 101 (2007)
  ISSN: 0021-8979
  DOI: 10.1063/1.2743090
  BibTeX: Download
• Wellmann P., Pons M.:
  Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
  In: Journal of Crystal Growth 303 (2007), p. 337-341
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2006.11.328
  BibTeX: Download
• Sakwe A., Müller R., Wellmann P.:
  Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (vol 289, pg 520, 2006)
  In: Journal of Crystal Growth 299 (2007), p. 234-234
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2006.10.196
  BibTeX: Download
• Konias K., Hock R., Stockmeier M., Wellmann P., Miller M., Ossege S., Magerl A.:
  In-situ X-ray measurements of defect generation during PVT growth of SiC
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2006) (Newcastle upon Tyne, 09/03/2006 - 09/07/2006)
  DOI: 10.4028/www.scientific.net/MSF.556-557.267
  BibTeX: Download
• Sakwe A., Wellmann P.:
  Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals
  European Conference on Silicon Carbide and Related Materials (ECSCRM 20006) (Newcastle upon Tyne)
  DOI: 10.4028/www.scientific.net/MSF.556-557.263
  BibTeX: Download
• Wellmann P., Hens P., Sakwe A., Queren D., Müller R., Durst K., Göken M.:
  Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth
  European Conference on Silicon Carbide and Related Materials (ECSCRM 20006) (Newcastle upon Tyne)
  DOI: 10.4028/www.scientific.net/MSF.556-557.259
  BibTeX: Download

2006

• Wellmann P., Müller R., Queren D., Sakwe A., Pons M.:
  Vapor growth of SiC bulk crystals and its challenge of doping
  In: Surface & Coatings Technology 201 (2006), p. 4026-4031
  ISSN: 0257-8972
  DOI: 10.1016/j.surfcoat.2006.08.033
  BibTeX: Download
• Wellmann P., Pons M.:
  Silicon carbide CVD for electronic device applications
  In: Chemical Vapor Deposition 12 (2006), p. 463-464
  ISSN: 0948-1907
  DOI: 10.1002/cvde.200690018
  BibTeX: Download
• Müller R., Künecke U., Queren D., Sakwe A., Wellmann P.:
  Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
  In: Chemical Vapor Deposition 12 (2006), p. 557-561
  ISSN: 0948-1907
  DOI: 10.1002/cvde.200606474
  BibTeX: Download
• Künecke U., Wellmann P.:
  Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
  In: European Physical Journal-Applied Physics 34 (2006), p. 209-213
  ISSN: 1286-0042
  DOI: 10.1051/epjap:2006055
  BibTeX: Download
• Topic I., Sockel HG., Wellmann P., Göken M.:
  The influence of microstructure on the magnetic properties of WC/Co hardmetals
  In: Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 423 (2006), p. 306-312
  ISSN: 0921-5093
  DOI: 10.1016/j.msea.2006.02.018
  BibTeX: Download
• Wellmann P., Müller R., Pons M.:
  Modeling and experimental verification of SiC M-PVT bulk crystal growth
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.75
  BibTeX: Download
• Müller R., Künecke U., Thuaire A., Mermoux M., Pons M., Wellmann P.:
  Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering
  In: Physica Status Solidi C: Conferences 3 (2006), p. 558-561
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564148
  BibTeX: Download
• Chaussende D., Wellmann P., Ucar M., Pons M., Madar R.:
  In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.63
  BibTeX: Download
• Sakwe A., Müller R., Queren D., Künecke U., Wellmann P.:
  Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 3 (2006), p. 567-570
  ISSN: 1862-6351
  DOI: 10.1002/pssc.200564153
  BibTeX: Download
• Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
  Electronic Raman Studies of Shallow Donors in Silicon Carbide
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.579
  BibTeX: Download
• Sakwe A., Müller R., Masri P., Wellmann P.:
  Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals
  In: Physica Status Solidi C: Conferences 3 (2006), p. 562-566
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564152
  BibTeX: Download
• Wellmann P., Queren D., Müller R., Sakwe A., Künecke U.:
  Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.79
  BibTeX: Download
• Müller R., Künecke U., Weingärtner R., Maier M., Wellmann P.:
  Anomalous charge carrier transport phenomena in highly aluminum doped SiC
  In: Physica Status Solidi C: Conferences 3 (2006), p. 554-557
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564150
  BibTeX: Download

2005

• Wellmann P., Straubinger T., Künecke U., Müller R., Sakwe A., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L., Camassel J.:
  Optical mapping of aluminum doped p-type SiC wafers
  In: Physica Status Solidi A-Applications and Materials Science 202 (2005), p. 598-601
  ISSN: 0031-8965
  DOI: 10.1002/PSSA.200460436
  BibTeX: Download
• Wellmann P., Desperrier P., Müller R., Straubinger T., Winnacker A., Baillet F., Blanquet E., Dedulle J., Pons M.:
  SiC single crystal growth by a modified physical vapor transport technique
  In: Journal of Crystal Growth 275 (2005), p. E555-E560
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.070
  BibTeX: Download
• Pons M., Blanquet E., Dedulle J., Ucar M., Wellmann P., Danielsson Ö., Ferret P., Di Cioccio L., Baillet F., Chaussende D., Madar R.:
  Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.3
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• Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
  Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/03/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.445
  BibTeX: Download
• Wellmann P., Straubinger T., Desperrier P., Müller R., Künecke U., Sakwe A., Schmitt H., Winnacker A., Blanquet E., Dedulle J., Pons M.:
  Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.25
  BibTeX: Download
• Wellmann P., Müller R., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L.:
  Micro-optical characterization study of highly p-type doped SiC : Al wafers
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.393
  BibTeX: Download
• Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
  In situ visualization of SiC physical vapor transport crystal growth
  In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.253
  BibTeX: Download
• Müller R., Künecke U., Weingärtner R., Schmitt H., Desperrier P., Wellmann P.:
  High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/03/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.31
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• Sakwe A., Herro ZG., Wellmann P.:
  Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.283
  BibTeX: Download

2004

• Wellmann P., Albrecht A., Künecke U., Birkmann B., Müller G., Jurisch M.:
  Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
  In: European Physical Journal-Applied Physics 27 (2004), p. 357-361
  ISSN: 1286-0042
  DOI: 10.1051/epjap:2004041
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• Weißer M., Seitz C., Wellmann P., Hock R., Magerl A.:
  Structural defects in SiC crystals investigated by high energy x-ray diffraction
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.339
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• Weingärtner R., Wellmann P., Winnacker A.:
  On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.645
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• Müller R., Desperrier P., Seitz C., Weißer M., Magerl A., Maier M., Winnacker A., Wellmann P.:
  In-situ Er-doping of SiC bulk single crystals
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.723
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• Desperrier P., Müller R., Winnacker A., Wellmann P.:
  Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
  International Conference on Silicon Carbide and Related Materials (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.727
  BibTeX: Download
• Wellmann P., Herro ZG., Sakwe A., Masri P., Bogdanov M., Karpov S., Kulik A., Ramm M., Makarov Y.:
  Analysis of graphitization during physical vapor transport growth of silicon carbide
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.55
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2003

• Wellmann P., Weingärtner R.:
  Determination of doping levels and their distribution in SiC by optical techniques
  E-MRS 2002 Symposium E: Advanced Characterisation of Semiconductors (Strasbourg, 06/17/2002 - 06/21/2002)
  DOI: 10.1016/S0921-5107(02)00707-9
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2002

• Wellmann P., Weingärtner R., Bickermann M., Straubinger T., Winnacker A.:
  Optical quantitative determination of doping levels and their distribution in SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(01)00976-X
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• Birkmann B., Weingärtner R., Wellmann P., Wiedemann B., Müller G.:
  Analysis of silicon incorporation into VGF-grown GaAs
  In: Journal of Crystal Growth 237 (2002), p. 345-349
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)01935-2
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• Straubinger T., Bickermann M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
  In: Journal of Crystal Growth 240 (2002), p. 117-123
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(02)00917-X
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• Weingärtner R., Wellmann P., Bickermann M., Hofmann HD., Straubinger T., Winnacker A.:
  Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
  In: Applied Physics Letters 80 (2002), p. 70-72
  ISSN: 0003-6951
  DOI: 10.1063/1.1430262
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• Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
  Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.9
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• Wellmann P., Herro ZG., Straubinger T., Winnacker A.:
  'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2001) (Tsukuba, 10/28/2001 - 11/02/2001)
  DOI: 10.4028/www.scientific.net/MSF.389-393.91
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• Weingärtner R., Bickermann M., Herro ZG., Künecke U., Sakwe A., Wellmann P., Winnacker A.:
  Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.333
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• Bickermann M., Weingärtner R., Herro ZG., Hofmann HD., Künecke U., Wellmann P., Winnacker A.:
  Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.337
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• Weingärtner R., Albrecht A., Wellmann P., Winnacker A.:
  Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.341
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• Straubinger T., Bickermann M., Rasp M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2001) (Tsukuba, 10/28/2001 - 11/02/2001)
  DOI: 10.4028/www.scientific.net/MSF.389-393.131
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2001

• Bickermann M., Hofmann HD., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  On the preparation of semi-insulating SiC bulk crystals by the PVT technique
  In: Applied Surface Science 184 (2001), p. 84-89
  ISSN: 0169-4332
  DOI: 10.1016/S0169-4332(01)00481-0
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• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of source material on silicon carbide vapor transport growth process
  In: Journal of Crystal Growth 225 (2001), p. 312-316
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)00881-8
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• Wellmann P., Bushevoy S., Weingärtner R.:
  Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 352-356
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00598-5
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• Weingärtner R., Bickermann M., Bushevoy S., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00599-7
  BibTeX: Download
• Bickermann M., Hofmann HD., Rasp M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  Study of boron incorporation during PVT growth of p-type SiC crystals
  European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.49
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• Straubinger T., Bickermann M., Hofmann HD., Weingärtner R., Wellmann P., Winnacker A.:
  Stability criteria for 4H-SiC bulk growth
  European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.25
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• Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P., Hofmann HD.:
  Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
  3rd European Conference on Silicon Carbide and Related Materials (Kloster Banz, 09/03/2000 - 09/07/2000)In: Materials Science Forum, Uetikon-Zuerich, Switzerland: Trans Tech Publications, 2001
  DOI: 10.4028/www.scientific.net/MSF.353-356.65
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• Straubinger T., Wellmann P., Winnacker A.:
  Investigation of a PVT SiC-growth set-up modified by an additional gas flow
  3rd European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.33
  BibTeX: Download
• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
  3rd European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.11
  BibTeX: Download
• Weingärtner R., Bickermann M., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
  3rd European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Klöoster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.397
  BibTeX: Download

2000

• Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
  In: Journal of Crystal Growth 216 (2000), p. 263-272
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(00)00372-9
  BibTeX: Download
• Straubinger T., Bickermann M., Kadinski L., Müller G., Selder M., Wellmann P., Winnacker A.:
  Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
  International Conference on Silicon Carbide and Related Materials (ICSCRM99) (Research Triangle Park, North Carolina, 10/10/1999 - 10/15/1999)
  DOI: 10.4028/www.scientific.net/MSF.338-342.39
  BibTeX: Download
• Selder M., Kadinski L., Durst F., Wellmann P., Straubinger T., Hofmann HD.:
  Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
  In: Journal of Crystal Growth 211 (2000), p. 333-338
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(99)00853-2
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• Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P.:
  Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
  International Conference on Silicon Carbide and Related Materials (ICSCRM1999) (Research Triangle Park, North Carolina, 10/10/1999 - 10/15/1999)
  DOI: 10.4028/www.scientific.net/MSF.338-342.31
  BibTeX: Download
• Wellmann P., Bickermann M., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
  International Conference on Silicon Carbide and Related Materials (ICSCRM99) (Research Triangle Park, North Carolina, 10/10/1999 - 10/15/1999)
  DOI: 10.4028/www.scientific.net/MSF.338-342.71
  BibTeX: Download