Publications
Prof. Dr.-Ing. Peter Wellmann - Publications
Prof. Dr.-Ing. Peter Wellmann
Publications
2022
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
In: Crystals 12 (2022)
ISSN: 2073-4352
DOI: 10.3390/cryst12121701
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Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites
In: physica status solidi (b) (2022)
ISSN: 0370-1972
DOI: 10.1002/pssb.202200094
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Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography
In: Applied Physics Letters 120 (2022), Article No.: 132101
ISSN: 0003-6951
DOI: 10.1063/5.0080895
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Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-nshb40
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In situ bow reduction during sublimation growth of cubic silicon carbide
In: Reviews on Advanced Materials Science 61 (2022), p. 829-837
ISSN: 1606-5131
DOI: 10.1515/rams-2022-0278
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In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth
7th European Conference on Crystal Growth (Paris, July 25, 2022 - July 27, 2022)
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Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
In: Materials 15 (2022)
ISSN: 1996-1944
DOI: 10.3390/ma15051897
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2021
Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals
In: Journal of Crystal Growth 576 (2021), Article No.: 126361
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2021.126361
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Analysis of compositional gradients in Cu(In,Ga)(S,Se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energies
In: Materials 14 (2021), Article No.: 2861
ISSN: 1996-1944
DOI: 10.3390/ma14112861
URL: https://www.mdpi.com/1996-1944/14/11/2861
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Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation
Seminar of the Young Crystal Growers (DGKK) (Berlin, October 5, 2022 - October 6, 2021)
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In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technology
In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 171-190 (Springer Series in Materials Science, Vol.304)
ISBN: 978-3-030-56305-9
DOI: 10.1007/978-3-030-56305-9_10
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Special Equipment for Ammonothermal Processes
In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 317-328 (Springer Series in Materials Science, Vol.304)
ISBN: 978-3-030-56305-9
DOI: 10.1007/978-3-030-56305-9_17
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Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates
In: Crystal Growth and Design (2021)
ISSN: 1528-7483
DOI: 10.1021/acs.cgd.1c00343
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New approaches and understandings in the growth of cubic silicon carbide
In: Materials 14 (2021), Article No.: 5348
ISSN: 1996-1944
DOI: 10.3390/ma14185348
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2020
Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
In: Journal of Crystal Growth 532 (2020), Article No.: 125436
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2019.125436
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The 50th Anniversary of the German Association for Crystal Growth, DGKK
In: Crystal Research and Technology 55 (2020), Article No.: 2000009
ISSN: 0232-1300
DOI: 10.1002/crat.202000009
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On the importance of dislocation flow in continuum plasticity models for semiconductor materials
In: Journal of Crystal Growth 532 (2020), Article No.: 125414
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2019.125414
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Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperatures
In: Crystals 10 (2020), p. 1-18
ISSN: 2073-4352
DOI: 10.3390/cryst10090723
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Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
In: physica status solidi (b) 257 (2020), Article No.: 1900286
ISSN: 0370-1972
DOI: 10.1002/pssb.201900286
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Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
In: Crystal Research and Technology 55 (2020), Article No.: 1900121
ISSN: 0232-1300
DOI: 10.1002/crat.201900121
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Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates
In: Advanced Functional Materials 30 (2020), Article No.: ARTN 2004612
ISSN: 1616-301X
DOI: 10.1002/adfm.202004612
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Investigating and Improving Performance Ratio of Cu(In,Ga)(S,Se)2 Photovoltaic Devices
EU PVSEC (Marseille, September 7, 2020 - September 11, 2020)
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Perfect materials as the base for technical innovation
In: The Innovation Platform 4 (2020), p. 82-85
URL: https://www.innovationnewsnetwork.com/the-innovation-platform/
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Prospects of bulk growth of 3C-SiC using sublimation growth
In: Materials Science Forum 1004 MSF (2020), p. 113-119
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.1004.113
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2019
Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization
In: Advanced Engineering Materials (2019), Article No.: 1900778
ISSN: 1438-1656
DOI: 10.1002/adem.201900778
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Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup
In: Materials Science Forum 963 (2019), p. 14-17
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.14
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Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals
In: Materials 12 (2019), Article No.: 2591
ISSN: 1996-1944
DOI: 10.3390/ma12162591
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Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
In: Materials 12 (2019), Article No.: 3272
ISSN: 1996-1944
DOI: 10.3390/ma12193272
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Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique
In: Journal of Nanoelectronics and Optoelectronics 14 (2019), p. 1394-1400
ISSN: 1555-130X
DOI: 10.1166/jno.2019.2633
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An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
In: Materials Science in Semiconductor Processing 91 (2019), p. 9-12
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2018.10.028
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Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
In: Materials Science Forum 963 (2019), p. 5-9
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.5
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Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystal
In: Materials 12 (2019), Article No.: 3652
ISSN: 1996-1944
DOI: 10.3390/ma12223652
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Three-dimensional in-situ growth surveillance of bulky SiC crystals
International Symposium on Digital Industrial Radiology and Computed Tomography – DIR2019 (Fürth, July 2, 2019 - July 4, 2019)
In: German Society for Non-Destructive Testing (DGZfP) (ed.): Proceedings of the DIR 2019 2019
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Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
In: Materials Science Forum 963 (2019), p. 149-152
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.149
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Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth
In: Materials 12 (2019), Article No.: 2179
ISSN: 1996-1944
DOI: 10.3390/ma12132179
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Limitations during Vapor Phase Growth of Bulk (100)
3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
In: Materials 12 (2019), Article No.: 2353
ISSN: 1996-1944
DOI: 10.3390/ma12152353
URL: https://www.mdpi.com/1996-1944/12/15/2353
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Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure
In: Coatings 9 (2019), p. 1-16
ISSN: 2079-6412
DOI: 10.3390/coatings9080484
URL: https://www.mdpi.com/2079-6412/9/8/484
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Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide
In: Materials 12 (2019), Article No.: 2487
ISSN: 1996-1944
DOI: 10.3390/ma12152487
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Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
(2019), Article No.: arXiv:1906.07433
URL: https://arxiv.org/abs/1906.07433
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(online publication)
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Deep electronic levels in n-type and p-type 3C-SiC
In: Materials Science Forum 963 (2019), p. 297-300
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.297
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Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
In: Materials Science Forum 963 (2019), p. 157-160
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.157
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Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules
In: Materials Science Forum 963 (2019), p. 42-45
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.42
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Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC
In: Materials 12 (2019), Article No.: 2207
ISSN: 1996-1944
DOI: 10.3390/ma12132207
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Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC
In: Applied Physics B-Lasers and Optics 125 (2019), Article No.: 172
ISSN: 0946-2171
DOI: 10.1007/s00340-019-7279-8
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Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications"
2019
(Materials, Vol. Energy Materials)
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2018
Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique
In: Journal of Electronic Materials (2018)
ISSN: 0361-5235
DOI: 10.1007/s11664-018-6636-4
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Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules
In: Advanced Materials Proceedings 3 (2018), p. 540-543
ISSN: 2002-4428
DOI: 10.5185/amp.2018/1414
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Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
In: Materials Science Forum 924 (2018), p. 245-248
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.924.245
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Solution Growth of Silicon Carbide Using the Vertical Bridgman Method
In: Crystal Research and Technology (2018), Article No.: 1800019
ISSN: 0232-1300
DOI: 10.1002/crat.201800019
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From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
In: Materials Science in Semiconductor Processing 78 (2018), p. 57-68
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2017.12.012
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In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
In: Journal of Crystal Growth 498 (2018), p. 214-223
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.06.024
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Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques
In: International Journal of Nanoparticle Research 2 (2018)
Open Access: http://escipub.com/ijnr-2017-12-1501/
URL: http://escipub.com/ijnr-2017-12-1501/
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Review of SiC crystal growth technology
In: Semiconductor Science and Technology 33 (2018), p. 1-21
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aad831
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2017
Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
In: Chemistry - A European Journal 23 (2017), p. 12275-12282
ISSN: 0947-6539
DOI: 10.1002/chem.201701081
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Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
In: Journal of Crystal Growth 479 (2017), p. 59-66
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.027
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Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides
5th German-Swiss Conference on Crystal Growth (Freiburg, March 8, 2017 - March 10, 2017)
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Growing bulk-like 3C-SiC from seeding material produced by CVD
In: physica status solidi (a) (2017), Article No.: 1600429
ISSN: 1862-6300
DOI: 10.1002/pssa.201600429
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3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers
In: Materials Science Forum 897 (2017), p. 15-18
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.897.15
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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
In: Journal of Crystal Growth 478 (2017), p. 159-162
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.002
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Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires
In: International Journal of Nanoparticles and Nanotechnology 3 (2017)
Open Access: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
URL: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
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Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers
In: Advanced Materials Proceedings 2 (2017), p. 774-778
ISSN: 2002-4428
DOI: 10.5185/amp.2017/419
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Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates
In: Journal of Materials Science: Materials in Electronics (2017), p. 1-9
ISSN: 0957-4522
DOI: 10.1007/s10854-017-6467-8
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Low Temperature Photoluminescence of 6H fluorescent SiC
E-MRS Spring Meeting 2017 (Strasbourg, May 22, 2017 - May 26, 2017)
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Detection of effective recombination centers in fluorescent SiC using thermally
stimulated luminescence
5th international workshop on LED and Solar Applications (Lyngby, September 13, 2017 - September 14, 2017)
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Thermally Stimulated Luminescence in 6H Fluorescent SiC
International Conference on Silicon Carbide and Related Materials (Washington, DC, September 17, 2017 - September 22, 2017)
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Materials-Related Solutions for Industry
In: Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (ed.): Materials Innovation for the global circular economy and sustainable society, 2017 (WORLD MATERIALS SUMMITS, Vol.6)
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Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond
In: Zeitschrift für Anorganische und Allgemeine Chemie 643 (2017), p. 1312-1322
ISSN: 0044-2313
DOI: 10.1002/zaac.201700270
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Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence
In: Advanced Materials Proceedings 2 (2017), p. 769-773
ISSN: 2002-4428
DOI: 10.5185/amp.2017/415
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Growth, defects and doping of 3C-SiC on hexagonal polytypes
In: ECS Journal of Solid State Science and Technology 6 (2017), p. P741-P745
ISSN: 2162-8769
DOI: 10.1149/2.0281710jss
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2016
High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
In: Materials Science Forum 858 (2016), p. 33-36
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.33
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X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry
WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY (Iguassu Falls, September 26, 2016 - September 29, 2016)
In: International Society for Industrial Process (ed.): WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY 2016
URL: http://www.isipt.org/world-congress/8.html
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Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
In: Journal of Crystal Growth 456 (2016), p. 33-42
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2016.08.067
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Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates
In: Materials Science Forum 858 (2016), p. 89-92
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.89
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Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions
In: International Journal of Nanoparticles and Nanotechnology 2:006 (2016)
Open Access: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
URL: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
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Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
In: Journal of Materials Science: Materials in Electronics 1-9 (2016), p. 506-511
ISSN: 0957-4522
DOI: 10.1109/PVSC.2016.7749646
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Solar driven energy conversion applications based on 3C-SiC
In: Materials Science Forum 858 (2016), p. 1028-1031
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.1028
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Cubic silicon carbide as a potential photovoltaic material
In: Solar Energy Materials and Solar Cells 145 (2016), p. 104-108
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2015.08.029
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Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
In: Materials Science Forum 858 (2016), p. 49-52
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.49
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2015
Feedstock recharging during directional solidification of silicon ingots for PV applications
29th European Photovoltaic Solar Energy Conference and Exhibition (Amsterdam, September 22, 2014 - September 26, 2014)
In: EUPVSEC (ed.): Proceedings of the 29th EU PVSEC conference 2015
DOI: 10.4229/EUPVSEC20142014-2AV.1.11
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Ceramic liner technology for ammonoacidic synthesis
In: Journal of Supercritical Fluids 99 (2015), p. 76-87
ISSN: 0896-8446
DOI: 10.1016/j.supflu.2015.01.017
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Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
In: Crystal Growth & Design 15 (2015), p. 2940-2947
ISSN: 1528-7483
DOI: 10.1021/acs.cgd.5b00368
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Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence
In: Thin Solid Films 582 (2015), p. 387-391
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.10.063
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Low temperature formation of CuIn1 - xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors
In: Thin Solid Films 582 (2015), p. 60-68
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.11.060
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Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
In: Materials Science Forum 821-823 (2015), p. 77-80
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.77
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Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
In: Journal of Crystal Growth 418 (2015), p. 64-69
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2015.02.020
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Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
DOI: 10.1016/j.egypro.2015.12.296
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Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
In: Energy Procedia 84 (2015), p. 62-70
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2015.12.296
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Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
In: Crystal Research and Technology 50 (2015), p. 2-9
ISSN: 0232-1300
DOI: 10.1002/crat.201400216
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Towards the growth of SiGeC epitaxial layers for the application in Si solar cells
In: Energy Procedia 84 (2015), p. 236-241
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2015.12.319
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Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C
In: Thin Solid Films 577 (2015), p. 88-93
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2015.01.049
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Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation
In: Thin Solid Films 582 (2015), p. 397-400
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.11.002
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Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
In: Energy Procedia 84 (2015), p. 86-92
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2015.12.299
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2014
Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
In: IOP Conference Series: Materials Science and Engineering 56 (2014), Article No.: 012004
ISSN: 1757-8981
DOI: 10.1088/1757-899X/56/1/012004
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, , , , , , , , , :
Nucleation and growth of polycrystalline SiC
In: IOP Conference Series: Materials Science and Engineering 56 (2014), Article No.: 012001
ISSN: 1757-8981
DOI: 10.1088/1757-899X/56/1/012001
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, , , , , , :
Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
In: Materials Science Forum 778-780 (2014), p. 9-12
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.9
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, , , :
Advances in wide bandgap SiC for optoelectronics
In: European Physical Journal B 87 (2014)
ISSN: 1434-6028
DOI: 10.1140/epjb/e2014-41100-0
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, , , , , , , , , , :
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
In: IOP Conference Series: Materials Science and Engineering 56 (2014)
ISSN: 1757-8981
DOI: 10.1088/1757-899X/56/1/012002
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, , , , , , , , , , :
Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
In: Physica Status Solidi (C) Current Topics in Solid State Physics 11 (2014), p. 1439-1442
ISSN: 1862-6351
DOI: 10.1002/pssc.201300656
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, , , , , , , , :
In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging
German Conference on Crystal Growth (Halle, March 12, 2014 - March 14, 2014)
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, , , , , , :
Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications, Proceedings of the E-MRS 2013 Spring Meeting, Symposium G
2014
(IOP Conference Series: Materials Science and Engineering, Vol. 56, Number 1)
DOI: 10.1088/1757-899X/56/1/011001
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, , (ed.):
Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
EMRS 2013 Spring Meeting, Symposium G (Strasbourg, May 27, 2013 - May 31, 2013)
In: IOP Conf. Series: Materials Science and Engineering 56 (2014) 011001 2014
DOI: 10.1088/1757-899X/56/1/011001
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, , :
Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques
In: Journal of Alloys and Compounds 588 (2014), p. 254-258
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2013.10.248
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, , , , , :
2013
Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
In: Journal of Applied Physics 114 (2013), Article No.: 073518
ISSN: 0021-8979
DOI: 10.1063/1.4818815
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, , , , :
Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
In: Materials Science Forum 740-742 (2013), p. 52-55
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.52
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, , , , , :
Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates
In: Materials Science Forum 740-742 (2013), p. 19-22
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.19
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, , , , , , :
Polycrystalline SiC as source material for the growth of fluorescent SiC layers
In: Materials Science Forum 740-742 (2013), p. 39-42
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.39
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, , , , , , , , :
Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing
In: Thin Solid Films 535 (2013), p. 97-101
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.11.069
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, , , , , , , , :
Lateral boron distribution in polycrystalline SiC source materials
In: Materials Science Forum 740-742 (2013), p. 397-400
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.397
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, , , , , , , :
In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium
In: Thin Solid Films 535 (2013), p. 133-137
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.11.081
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, , , :
Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
In: Materials Science Forum 740-742 (2013), p. 27-30
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.27
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, , , , :
Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC
In: Materials Science Forum 740-742 (2013), p. 1024-1027
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.1024
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, , , , , , , :
Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
In: Materials Science Forum 740-742 (2013), p. 185-188
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.185
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, , , , , , , , , , , :
Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors
In: Materials Research Society Symposium - Proceedings 1538 (2013), p. 203-208
ISSN: 0272-9172
DOI: 10.1557/opl.2013.980
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, , , , :
Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
In: Materials Science Forum 740-742 (2013), p. 315-318
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.315
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, , , , , :
Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
In: Materials Chemistry and Physics 142 (2013), p. 311-317
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2013.07.021
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, , , , , , :
Photoluminescence topography of fluorescent SiC and its corresponding source crystals
In: Materials Science Forum 740-742 (2013), p. 421-424
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.421
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, , , , , , :
Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
In: Journal of Crystal Growth 381 (2013), p. 15-21
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.06.033
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, , , , , , , , , :
2012
Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
In: Materials Letters 67 (2012), p. 300-302
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2011.09.109
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, , , , , , :
Defect structures at the silicon/3C-SiC interface
In: Materials Science Forum 717-720 (2012), p. 423-426
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.423
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, , , :
Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
In: Materials Science Forum 717-720 (2012), p. 177-180
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.177
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, , , , , , , :
Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
In: Thin Solid Films 522 (2012), p. 2-6
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.177
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, , , , :
Effects of source material on epitaxial growth of fluorescent SiC
In: Thin Solid Films 522 (2012), p. 7-10
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.176
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, , , , , , , , , :
Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices
In: Conference on Lasers and Electro-Optics (2012), Article No.: CF3J.2.
ISSN: 2160-9020
DOI: 10.1364/CLEO_SI.2012.CF3J.2
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, , , , , :
Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
In: Optics Express 20 (2012), p. 7575-7579
ISSN: 1094-4087
DOI: 10.1364/OE.20.007575
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, , , , , , , :
Fluorescent SiC as a new material for white LEDs
In: Physica Scripta T148 (2012), Article No.: 014002
ISSN: 0031-8949
DOI: 10.1088/0031-8949/2012/T148/014002
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, , , , , , , , , , , , , , , :
Nucleation Control of Cubic Silicon Carbide on 6H-Substrates
In: Crystal Growth & Design 12 (2012), p. 197-204
ISSN: 1528-7483
DOI: 10.1021/cg200929r
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, , , , , :
Engineering of Wide Bandgap Semiconductor Materials for Energy Saving, Proceedings of the E-MRS 2011 Spring Meeting, Symposium Q
2012
(Thin Solid Films, Vol. 522)
DOI: 10.1016/j.tsf.2012.04.001
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, , (ed.):
Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
In: Thin Solid Films 522 (2012), p. 1-1
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.04.001
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(anderer)
, , , :
2011
Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy
In: Materials Science Forum 679-680 (2011), p. 127-130
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.679-680.127
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, , , , , :
The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction
In: Thin Solid Films 519 (2011), p. 7197-7200
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.12.138
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, , , , , , :
Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
In: Materials Science Forum 679-680 (2011), p. 277-281
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.679-680.277
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, , , , :
Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid
In: Journal of Applied Physics 110 (2011), Article No.: 104301
ISSN: 0021-8979
DOI: 10.1063/1.3658634
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, , , , , :
Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices
In: Thin Solid Films 519 (2011), p. 5744-5747
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.12.209
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, :
Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives
In: Thin Solid Films 520 (2011), p. 1341-1347
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.04.142
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, :
From Semiconductors to New Energy – the PV Value added Chain, Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting
2011
(Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France)
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, (ed.):
Kooperative Promotionen mit Fachhochschulen in Zusammenarbeit mit der technischen Fakultät der Universität Erlangen-Nürnberg; erschienen in „Ingenieurpromotion – Stärken und Qualitätssicherung, Beiträge eines gemeinsamen Symposiums von acatech, TU9, ARGE TU/TH und 4ing
In: Horst Hippler (ed.): Ingenieurpromotion – Stärken und Qualitätssicherung, Berlin Heidelberg: Springer Verlag, 2011, p. 125-132 (acatech Diskussion)
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:
2010
Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)
In: Materials Science Forum 645-648 (2010), p. 151-154
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.645-648.151
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, , , , :
Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction
In: Materials Science Forum 645-648 (2010), p. 29-32
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.645-648.29
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, , , , , :
Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content
In: Materials Research Society Symposium - Proceedings 1165 (2010), p. 25-30
ISSN: 0272-9172
DOI: 10.1557/PROC-1165-M02-02
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, , , , , , :
Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites
In: Thin Solid Films 518 (2010), p. 2910-2915
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.10.151
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, , , , :
Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
In: Energy Procedia 2 (2010), p. 183-188
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2010.07.026
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, , , , , , :
Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
In: Solar Energy Materials and Solar Cells 94 (2010), p. 1875-1879
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2010.06.002
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, , , , , , :
2009
Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices
In: Advanced Engineering Materials 11 (2009), p. 295-301
ISSN: 1438-1656
DOI: 10.1002/adem.200800292
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, , , :
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
In: Materials Science Forum 615-617 (2009), p. 11-14
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.11
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, , , , :
Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
In: Materials Science Forum 600-603 (2009), p. 19-22
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.600-603.19
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, , :
P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
In: Materials Science Forum 615-617 (2009), p. 85-88
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.85
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, , , , :
Sulfo-selenization of metallic thin films of Cu, In and Cu-In
In: Thin Solid Films 517 (2009), p. 2213-2217
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.10.089
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, , , , , , , , :
Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
In: Materials Science Forum 615-617 (2009), p. 259-262
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.259
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, , , , :
Silicon carbide growth: C/Si ratio evaluation and modeling
In: Materials Science Forum 600-603 (2009), p. 83-88
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.600-603.83
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, , , , , , :
On the lattice parameters of silicon carbide
In: Journal of Applied Physics 105 (2009), Article No.: 033511
ISSN: 0021-8979
DOI: 10.1063/1.3074301
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, , , , :
Thermal Expansion Coefficients of 6H Silicon Carbide
In: Materials Science Forum 600-603 (2009), p. 517-520
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.600-603.517
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, , , , , :
Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen
2009
ISBN: 978-3-00-027314-8
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, , (ed.):
In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
In: Materials Science Forum 615-617 (2009), p. 23-26
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.23
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, , , , :
2008
Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique
11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008) (Boston, Massachusetts, June 1, 2008 - June 5, 2008)
In: NSTI, Nano Science and Technology Institute (ed.): Nanotech 2008, Vol. 1-3 2008
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, , , , :
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
In: physica status solidi (b) 245 (2008), p. 1239-1256
ISSN: 0370-1972
DOI: 10.1002/pssb.200743520
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, , , , , , , , , , , :
Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
In: Physical Review B 77 (2008), Article No.: 195203
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.77.195203
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, , , , :
Bulk growth of SiC
In: Materials Research Society Symposium - Proceedings 1069 (2008), p. 3-14
ISSN: 0272-9172
DOI: 10.1557/PROC-1069-D01-01
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, , , , , , , , , :
Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
In: Journal of Crystal Growth 310 (2008), p. 955-958
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.11.064
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, , , , , :
Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
In: Thin Solid Films 516 (2008), p. 7256-7259
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.12.025
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, , , :
2007
Light extraction from OLEDs for lighting applications through light scattering
In: Organic Electronics 8 (2007), p. 293-299
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2006.11.003
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, , , , :
Status of SiC bulk growth processes
In: Journal of Physics D-Applied Physics 40 (2007), p. 6150-6158
ISSN: 0022-3727
DOI: 10.1088/0022-3727/40/20/S02
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, , :
Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
In: Thin Solid Films 515 (2007), p. 8567-8572
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.03.136
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, , :
Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies
In: Materials Science Forum 556-557 (2007), p. 13-16
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.13
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, , , , , , :
In-situ X-ray measurements of defect generation during PVT growth of SiC
In: Materials Science Forum 556-557 (2007), p. 267-270
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.267
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, , , , , , :
Defect etching of non-polar and semi-polar faces in SiC
In: Materials Science Forum 556-557 (2007), p. 243-246
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.243
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, , :
Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]
In: Journal of Crystal Growth 299 (2007), p. 234-234
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.196
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, , :
Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals
In: Materials Science Forum 556-557 (2007), p. 263-266
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.263
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, :
Contactless electrical defect characterization and topography of a-plane grown epitaxial layers
In: Materials Science Forum 556-557 (2007), p. 327-330
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.327
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, , , , , , , :
Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai
Shanghai: 2007
ISBN: 978-7-5608-3614-0
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, , (ed.):
Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth
In: Materials Science Forum 556-557 (2007), p. 259-262
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.259
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, , , , , , :
Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
In: Journal of Applied Physics 101 (2007)
ISSN: 0021-8979
DOI: 10.1063/1.2743090
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, , , :
Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
In: Journal of Crystal Growth 303 (2007), p. 337-341
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.11.328
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, :
2006
In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
In: Materials Science Forum 527-529 (2006), p. 63-66
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.63
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, , , , :
Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
In: Materials Science Forum 527-529 (2006), p. 633-636
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.633
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, , , , , , , , :
Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
In: European Physical Journal-Applied Physics 34 (2006), p. 209-213
ISSN: 1286-0042
DOI: 10.1051/epjap:2006055
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, :
Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
In: Chemical Vapor Deposition 12 (2006), p. 557-561
ISSN: 0948-1907
DOI: 10.1002/cvde.200606474
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, , , , :
Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering
In: Physica Status Solidi C: Conferences 3 (2006), p. 558-561
ISSN: 1610-1634
DOI: 10.1002/pssc.200564148
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, , , , , :
Anomalous charge carrier transport phenomena in highly aluminum doped SiC
In: Physica Status Solidi C: Conferences 3 (2006), p. 554-557
ISSN: 1610-1634
DOI: 10.1002/pssc.200564150
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, , , , :
SiC epitaxial structure growth: evaluation and modeling
In: M. Syväjärvi and R. Yakimova (ed.): Wide Band Gap Materials and New Developments, India: Transworld Research Network, 2006, p. 69-89
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, , :
Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling
In: Materials Research Society Symposium - Proceedings 911 (2006), Article No.: 0911-B04-02
ISSN: 0272-9172
DOI: 10.1557/PROC-0911-B04-02
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, , , , , :
Electronic Raman Studies of Shallow Donors in Silicon Carbide
In: Materials Science Forum 527-529 (2006), p. 579
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.579
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, , , , , , , , , :
Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals
In: Physica Status Solidi C: Conferences 3 (2006), p. 562-566
ISSN: 1610-1634
DOI: 10.1002/pssc.200564152
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, , , :
Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
In: Physica Status Solidi (C) Current Topics in Solid State Physics 3 (2006), p. 567-570
ISSN: 1862-6351
DOI: 10.1002/pssc.200564153
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, , , , :
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC
In: Journal of Crystal Growth 289 (2006), p. 520-526
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.11.096
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, , :
The influence of microstructure on the magnetic properties of WC/Co hardmetals
In: Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 423 (2006), p. 306-312
ISSN: 0921-5093
DOI: 10.1016/j.msea.2006.02.018
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, , , :
Modeling and experimental verification of SiC M-PVT bulk crystal growth
In: Materials Science Forum 527-529 (2006), p. 75-78
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.75
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, , :
Vapor growth of SiC bulk crystals and its challenge of doping
In: Surface & Coatings Technology 201 (2006), p. 4026-4031
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2006.08.033
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, , , , :
Silicon carbide CVD for electronic device applications
In: Chemical Vapor Deposition 12 (2006), p. 463-464
ISSN: 0948-1907
DOI: 10.1002/cvde.200690018
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, :
Special Issue on Silicon Carbid CVD for Electronic Device Applications
Weinheim: 2006
(Special issue of the Journal of Chemical Vapor Deposition, Vol. 12)
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, (ed.):
Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
In: Materials Science Forum 527-529 (2006), p. 79-82
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.79
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, , , , :
Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai
2006
ISBN: 978-3-00-019576-1
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, , (ed.):
2005
High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
In: Materials Science Forum 483 (2005), p. 31-34
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.31
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, , , , , :
Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
In: Materials Science Forum 483 (2005), p. 3-8
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.3
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, , , , , , , , , , :
Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics
In: ECS Transactions 2005-9 (2005), p. 1-12
ISSN: 1938-5862
URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844440869&origin=inward
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, , , , , , , , , :
Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
In: Materials Science Forum 483 (2005), p. 283-286
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.283
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, , :
Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
In: Materials Science Forum 483 (2005), p. 445-448
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.445
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, , , , :
Additional pipework opens up transistor applications for SiC
In: Compound Semiconductor 11 (2005), p. 23-24
ISSN: 1096-598X
URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-18344397170&origin=inward
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SiC single crystal growth by a modified physical vapor transport technique
In: Journal of Crystal Growth 275 (2005), p. E555-E560
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.11.070
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, , , , , , , , :
In situ visualization of SiC physical vapor transport crystal growth
In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.11.253
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, , , , , , , , , , :
Micro-optical characterization study of highly p-type doped SiC : Al wafers
In: Materials Science Forum 483 (2005), p. 393-396
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.393
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, , , , , , :
Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
In: Materials Science Forum 483 (2005), p. 25-30
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.25
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, , , , , , , , , , :
Optical mapping of aluminum doped p-type SiC wafers
In: physica status solidi (a) 202 (2005), p. 598-601
ISSN: 1862-6300
DOI: 10.1002/PSSA.200460436
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, , , , , , , , , , :
2004
Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
In: Materials Science Forum 457-460 (2004), p. 727-730
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.727
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, , , :
In-situ Er-doping of SiC bulk single crystals
In: Materials Science Forum 457-460 (2004), p. 723-726
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.723
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, , , , , , , :
On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
In: Materials Science Forum 457-460 (2004), p. 645-648
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.645
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, , :
Structural defects in SiC crystals investigated by high energy x-ray diffraction
In: Materials Science Forum 457-460 (2004), p. 339-342
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.339
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, , , , :
Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
In: European Physical Journal-Applied Physics 27 (2004), p. 357-361
ISSN: 1286-0042
DOI: 10.1051/epjap:2004041
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, , , , , :
Analysis of graphitization during physical vapor transport growth of silicon carbide
In: Materials Science Forum 457-460 (2004), p. 55-58
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.55
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, , , , , , , , :
2003
Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
In: Materials Science Forum 433-436 (2003), p. 337-340
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.337
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, , , , , , :
Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
In: Journal of Crystal Growth 258 (2003), p. 261-267
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(03)01538-0
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, , , , , , , :
Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
In: Materials Science Forum 433-436 (2003), p. 341-344
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.341
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, , , :
Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
In: Materials Science Forum 433-436 (2003), p. 333-336
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.333
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, , , , , , :
Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
In: Materials Science Forum 433-436 (2003), p. 9-12
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.9
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, , , , , , , :
Determination of doping levels and their distribution in SiC by optical techniques
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 102 (2003), p. 262-268
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(02)00707-9
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, :
2002
Analysis of silicon incorporation into VGF-grown GaAs
In: Journal of Crystal Growth 237 (2002), p. 345-349
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(01)01935-2
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, , , , :
Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
In: Materials Science Forum 389-393 (2002), p. 131-134
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.389-393.131
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, , , , , :
Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
In: Journal of Crystal Growth 240 (2002), p. 117-123
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(02)00917-X
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, , , , :
Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
In: Applied Physics Letters 80 (2002), p. 70-72
ISSN: 0003-6951
DOI: 10.1063/1.1430262
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, , , , , :
'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
In: Materials Science Forum 389-393 (2002), p. 91-94
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.389-393.91
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, , , :
Optical quantitative determination of doping levels and their distribution in SiC
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(01)00976-X
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, , , , :
2001
Study of boron incorporation during PVT growth of p-type SiC crystals
In: Materials Science Forum 353-356 (2001), p. 49-52
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.49
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, , , , , , :
On the preparation of semi-insulating SiC bulk crystals by the PVT technique
In: Applied Surface Science 184 (2001), p. 84-89
ISSN: 0169-4332
DOI: 10.1016/S0169-4332(01)00481-0
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, , , , , :
SiC crystal growth from the vapor and liquid phase
In: Materials Research Society Symposium - Proceedings 640 (2001), Article No.: H1.1
ISSN: 0272-9172
DOI: 10.1557/PROC-640-H1.1
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, , , , , , , , , :
Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
In: Materials Science Forum 353-356 (2001), p. 65-68
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.65
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, , , , , :
Stability criteria for 4H-SiC bulk growth
In: Materials Science Forum 353-356 (2001), p. 25-28
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.25
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, , , , , :
Investigation of a PVT SiC-growth set-up modified by an additional gas flow
In: Materials Science Forum 353-356 (2001), p. 33-36
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.33
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, , :
Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(00)00599-7
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, , , , , , , :
Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
In: Materials Science Forum 353-356 (2001), p. 397-400
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.397
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, , , , , , :
Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg
Aachen: Shaker Verlag, 2001
(Berichte aus der Halbleitertechnik)
ISBN: 3-8265-9075-9
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Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 352-356
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(00)00598-5
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, , :
Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
In: Materials Science Forum 353-356 (2001), p. 11-14
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.11
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, , , , , :
Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process
In: Materials Science Forum 225 (2001), p. 353-356
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.11
URL: http://www.scientific.net/MSF.353-356.11
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, , , , , :
Impact of source material on silicon carbide vapor transport growth process
In: Journal of Crystal Growth 225 (2001), p. 312-316
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(01)00881-8
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, , , , , :
2000
Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
In: Materials Science Forum 338-342 (2000), p. 31-34
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.338-342.31
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, , , , , :
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
In: Journal of Crystal Growth 211 (2000), p. 333-338
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(99)00853-2
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, , , , , , , , :
Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
In: Materials Science Forum 338-342 (2000), p. 39-42
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.338-342.39
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, , , , , , , , :
Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
In: Materials Science Forum 338-342 (2000), p. 71-74
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.338-342.71
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, , , , , , :
In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
In: Journal of Crystal Growth 216 (2000), p. 263-272
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(00)00372-9
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, , , , , , :
Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics
Third Vietnam-German Workshop on Physics and Engineering (Ho Chi Minh City)
In: Proceedings of the third Vietnam-German Workshop on Physics and Engineering 2000
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, , :
1999
Analysis on defect generation during the SiC bulk growth process
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials B61-62 (1999), p. 48-53
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(98)00443-7
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, , , , , :
Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging
In: Materials Research Society Symposium - Proceedings 572 (1999), p. 259-264
ISSN: 0272-9172
DOI: 10.1557/PROC-572-259
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, , , , , :
Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs
ICPS24th conference (Helsinki, August 14, 1999 - August 20, 1999)
In: The physics of semiconductors – World Scientific, proceedings of ICPS24th conference (1999) 1999
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, , , :
1998
Electronic states tuning of InAs self-assembled quantum dots
In: Applied Physics Letters 72 (1998), p. 3172-3174
ISSN: 0003-6951
DOI: 10.1063/1.121583
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, , , , :
Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots
In: Physica E-Low-Dimensional Systems & Nanostructures 2 (1998), p. 627-631
ISSN: 1386-9477
DOI: 10.1016/S1386-9477(98)00128-3
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, , , , , :
Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure
In: Applied Physics Letters 73 (1998), p. 3291-3293
ISSN: 0003-6951
DOI: 10.1063/1.122748
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, , , :
Giant magnetoresistance in a low-temperature grown GaAs with imbedded MnAs nanomagnets
Physics of Microstructured Semiconductors
In: Physics of Microstructured Semiconductors, Vol.6 1998
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, , , :
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
In: Journal of Electronic Materials 27 (1998), p. 1030-1033
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0158-4
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, , , :
1997
Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
In: Physical Review B 56 (1997), p. 13103-13112
ISSN: 1098-0121
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, , , , , , , , , :
Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation
In: Materials Research Society Symposium - Proceedings 475 (1997), p. 49-54
ISSN: 0272-9172
DOI: 10.1557/PROC-475-49
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, , , :
Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs
In: Applied Physics Letters 71 (1997), p. 2532-2534
ISSN: 0003-6951
DOI: 10.1063/1.120109
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, , , :
1996
On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP
In: Materials Research Society Symposium - Proceedings 422 (1996), p. 255-266
ISSN: 0272-9172
DOI: 10.1557/PROC-422-255
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, , :
1995
Acceptor-hydrogen interaction in ternary III-V semiconductors
In: Materials Science Forum 196-201 (1995), p. 987-991
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.196-201.987
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, , , , , , , , , :
1994
Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy
IEEE, 6th International Conference on InP and Related Materials (Santa Barbara, CA, March 27, 1994 - March 31, 1994)
In: IEEE (ed.): Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) 1994
DOI: 10.1109/ICIPRM.1994.328209
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, , , :