Prof. Dr.-Ing. Peter Wellmann - Publications

• Job title: Projektleitung Forschungsgruppe CGL (Crystal Growth Lab)
• Organization: Department of Materials Science and Engineering
• Working group: Chair of Materials for Electronics and Energy Technology
• Phone number: +49 9131 85-27635
• Fax number: +49 9131 85-28495
• Email: peter.wellmann@fau.de
• Website: http://crystals.techfak.fau.de/
• Address:
  
  Martensstr. 7
  91058 Erlangen
  Room 392
• Office hours: Room 3.92, Terminabsprache per Email (peter.wellmann@fau.de)

Publications

2017

• Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
  Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
  In: Journal of Crystal Growth 479 (2017), p. 59-66
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.027
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85030245162&origin=inward
  BibTeX: Download
• Schuh P., Schöler M., Wilhelm M., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
  In: Journal of Crystal Growth (2017), p. 159-162
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.002
  BibTeX: Download
• Häusler J., Schimmel S., Wellmann P., Schnick W.:
  Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
  In: Chemistry-A European Journal 23 (2017), p. 12275-12282
  ISSN: 0947-6539
  DOI: 10.1002/chem.201701081
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85019461382&origin=inward
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• Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
  3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers
  11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 (Halkidiki, 09/25/2016 - 09/29/2016)
  DOI: 10.4028/www.scientific.net/MSF.897.15
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020070800&origin=inward
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• Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
  Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates
  In: Journal of Materials Science: Materials in Electronics (2017), p. 1-9
  ISSN: 1573-482X
  DOI: 10.1007/s10854-017-6467-8
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85011659606&origin=inward
  BibTeX: Download
• Schuh P., Arzig M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Growing bulk-like 3C-SiC from seeding material produced by CVD
  In: Physica Status Solidi (A) Applications and Materials Science (2017)
  ISSN: 1862-6319
  DOI: 10.1002/pssa.201600429
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85013894698&origin=inward
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2016

• Syväjärvi M., Ma Q., Jokubavicius V., Galeckas A., Sun J., Liu X., Jansson M., Wellmann P., Linarsson M., Runde P., Johansen BA., Thøgersen A., Diplas S., Carvalho PA., Løvvik OM., Wright DN., Azarov AY., Svensson BG.:
  Cubic silicon carbide as a potential photovoltaic material
  In: Solar Energy Materials and Solar Cells 145 (2016), p. 104-108
  ISSN: 0927-0248
  DOI: 10.1016/j.solmat.2015.08.029
  BibTeX: Download
• Wellmann P., Fahlbusch L., Salamon M., Uhlmann N.:
  Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
  16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 (Giardini Naxos, 10/04/2015 - 10/09/2015)
  DOI: 10.4028/www.scientific.net/MSF.858.49
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971530349&origin=inward
  BibTeX: Download
• Schuh P., Vecera P., Hirsch A., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
  Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates
  16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 (Giardini Naxos, 10/04/2015 - 10/09/2015)
  DOI: 10.4028/www.scientific.net/MSF.858.89
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971507163&origin=inward
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• Sun J., Jokubavicius V., Gao L., Booker I., Jansson M., Liu X., Hofmann JP., Hensen EJ., Linnarsson MK., Wellmann P., Ramiro I., Marti A., Yakimova R., Syväjärvi M.:
  Solar driven energy conversion applications based on 3C-SiC
  16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 (Giardini Naxos, 10/04/2015 - 10/09/2015)
  DOI: 10.4028/www.scientific.net/MSF.858.1028
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971577103&origin=inward
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• Schuster M., Wernicke T., Möckel S., Wellmann P.:
  Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions
  In: International Journal of Nanoparticles 2:006 (2016)
  ISSN: 1753-2507
  URL: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
  BibTeX: Download
• Fahlbusch L., Schöler M., Mattle P., Schnitzer S., Khodamoradi H., Iwamoto N., Svensson BG., Wellmann P.:
  High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
  16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 (Giardini Naxos, 10/04/2015 - 10/09/2015)
  DOI: 10.4028/www.scientific.net/MSF.858.33
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84971537155&origin=inward
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• Schimmel S., Künecke U., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
  Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
  In: Journal of Crystal Growth 456 (2016), p. 33-42
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2016.08.067
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84994807597&origin=inward
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• Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
  Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
  43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 (Portland, OR, 06/05/2016 - 06/10/2016)
  DOI: 10.1109/PVSC.2016.7749646
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85003454677&origin=inward
  BibTeX: Download

2015

• Wilhelm M., Beck F., Wellmann P.:
  Towards the growth of SiGeC epitaxial layers for the application in Si solar cells
  In: Energy Procedia 84 (2015), p. 236-241
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.319
  BibTeX: Download
• Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
  Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2Solar Cell Absorber Layer
  In: Energy Procedia 84 (2015), p. 62-70
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.296
  BibTeX: Download
• Zweschke A., Wellmann P.:
  Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
  In: Energy Procedia 84 (2015), p. 86-92
  ISSN: 1876-6102
  DOI: 10.1016/j.egypro.2015.12.299
  BibTeX: Download
• Jokubavicius V., Yazdi GR., Liljedahl R., Ivanov IG., Sun J., Liu X., Schuh P., Wilhelm M., Wellmann P., Yakimova R., Syväjärvi M.:
  Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
  In: Crystal Growth & Design 15 (2015), p. 2940-2947
  ISSN: 1528-7483
  DOI: 10.1021/acs.cgd.5b00368
  BibTeX: Download
• Rankl D., Jokubavicius V., Syväjärvi M., Wellmann P.:
  Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
  European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 (Grenoble, 09/21/2014 - 09/25/2014)
  DOI: 10.4028/www.scientific.net/MSF.821-823.77
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84950314397&origin=inward
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• Schimmel S., Lindner M., Steigerwald T., Hertweck B., Richter TM., Künecke U., Alt N., Niewa R., Schlücker E., Wellmann P.:
  Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
  In: Journal of Crystal Growth 418 (2015), p. 64-69
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2015.02.020
  BibTeX: Download
• Künecke U., Hetzner C., Möckel S., Yoo H., Hock R., Wellmann P.:
  Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence
  In: Thin Solid Films 582 (2015), p. 387-391
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.10.063
  BibTeX: Download
• Möckel S., Wernicke T., Arzig M., Köder P., Brandl M., Ahmad R., Distaso M., Peukert W., Hock R., Wellmann P.:
  Low temperature formation of CuIn1-xGaxSe2 solar cell absorbers by all printed multiple species nanoparticulate Se plus Cu-In plus Cu-Ga precursors
  In: Thin Solid Films 582 (2015), p. 60-68
  ISSN: 0040-6090
  DOI: 10.1016/J.tsf.2014.11.060
  BibTeX: Download
• Peukert W., Schuster M., Distaso M., Möckel S., Künecke U., Wellmann P.:
  Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
  E-MRS Spring Meeting 2015 Symposium C - Advanced inorganic materials and structures for photovoltaics, 2015 (Lille, 05/10/2015 - 05/15/2015)
  DOI: 10.1016/j.egypro.2015.12.296
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964056036&origin=inward
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• Wilhelm M., Rieth M., Brandl M., Wibowo RA., Hock R., Wellmann P.:
  Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C
  In: Thin Solid Films 577 (2015), p. 88-93
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2015.01.049
  BibTeX: Download
• Wellmann P., Neubauer G., Fahlbusch L., Salamon M., Uhlmann N.:
  Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
  In: Crystal Research and Technology 50 (2015), p. 2-9
  ISSN: 0232-1300
  DOI: 10.1002/crat.201400216
  BibTeX: Download
• Hertweck B., Schimmel S., Steigerwald T., Alt N., Wellmann P., Schlücker E.:
  Ceramic liner technology for ammonoacidic synthesis
  In: Journal of Supercritical Fluids 99 (2015), p. 76-87
  ISSN: 0896-8446
  DOI: 10.1016/j.supflu.2015.01.017
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84924747256&origin=inward
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• Möckel S., Wernicke T., Arzig M., Köder P., Brandl M., Ahmad R., Distaso M., Peukert W., Hock R., Wellmann P.:
  Low temperature formation of CuIn1 - xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors
  In: Thin Solid Films 582 (2015), p. 60-68
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.11.060
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84926523996&origin=inward
  BibTeX: Download
• Zweschke A., Wellmann P.:
  Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation
  In: Thin Solid Films 582 (2015), p. 397-400
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2014.11.002
  URL: http://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84926435466&origin=inward
  BibTeX: Download
• Schimmel S., Lindner M., Steigerwald T., Hertweck B., Richter TMM., Künecke U., Alt N., Niewa R., Schlücker E., Wellmann P.:
  Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
  In: Journal of Crystal Growth 418 (2015), p. 64-69
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2015.02.020
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84924692058&origin=inward
  BibTeX: Download

2014

• Ou H., Ou Y., Argyraki A., Schimmel S., Kaiser M., Wellmann P., Linnarsson MK., Jokubavicius V., Sun J., Liljedahl R., Syväjärvi M.:
  Advances in wide bandgap SiC for optoelectronics
  In: European Physical Journal B 87 (2014)
  ISSN: 1434-6028
  DOI: 10.1140/epjb/e2014-41100-0
  BibTeX: Download
• Neubauer G., Salamon M., Uhlmann N., Wellmann P.:
  Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
  15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 (Miyazaki, 09/29/2013 - 10/04/2013)
  DOI: 10.4028/www.scientific.net/MSF.778-780.9
  BibTeX: Download
• Schimmel S., Künecke U., Baser HH., Steigerwald T., Hertweck B., Alt N., Schlücker E., Schwieger W., Wellmann P.:
  Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 11 (2014), p. 1439-1442
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201300656
  BibTeX: Download
• Grivickas V., Gulbinas K., Jokubavicius V., Sun J., Karaliūnas M., Kamiyama S., Linnarsson MK., Kaiser M., Wellmann P., Syväjärvi M.:
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  In: IOP Conference Series : Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012004
  BibTeX: Download
• Kaiser M., Schimmel S., Jokubavicius V., Linnarsson MK., Ou H., Syväjärvi M., Wellmann P.:
  Nucleation and growth of polycrystalline SiC
  In: IOP Conference Series : Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012001
  BibTeX: Download
• Schimmel S., Kaiser M., Jokubavicius V., Ou Y., Hens P., Linnarsson MK., Sun J., Liljedahl R., Ou H., Syväjärvi M., Wellmann P.:
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  In: IOP Conference Series : Materials Science and Engineering 56 (2014)
  ISSN: 1757-8981
  DOI: 10.1088/1757-899X/56/1/012002
  BibTeX: Download
• Wibowo RA., Möckel S., Yoo H., Hölzing A., Hock R., Wellmann P.:
  Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques
  In: Journal of Alloys and Compounds 588 (2014), p. 254-258
  ISSN: 0925-8388
  DOI: 10.1016/j.jallcom.2013.10.248
  BibTeX: Download
• Wellmann P., Syväjärvi M., Ou H.:
  Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
  EMRS 2013 Spring Meeting, Symposium G (Strasbourg, 05/27/2013 - 05/31/2013)
  DOI: doi:10.1088/1757-899X/56/1/011001
  BibTeX: Download

2013

• Zheng Q., Crocco J., Bensalah H., Wellmann P., Osvet A., Künecke U., Dierre F., Vela O., Perez J., Dieguez E.:
  Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
  In: Journal of Crystal Growth 381 (2013), p. 15-21
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2013.06.033
  BibTeX: Download
• Wibowo RA., Möckel S., Yoo H., Hetzner C., Hölzing A., Wellmann P., Hock R.:
  Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
  In: Materials Chemistry and Physics 142 (2013), p. 311-317
  ISSN: 0254-0584
  DOI: 10.1016/j.matchemphys.2013.07.021
  BibTeX: Download
• Benz F., Strunk HP., Schaab J., Künecke U., Wellmann P.:
  Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
  In: Journal of Applied Physics 114 (2013)
  ISSN: 0021-8979
  DOI: 10.1063/1.4818815
  BibTeX: Download
• Künecke U., Hölzing A., Jost S., Lechner R., Vogt H., Heiss A., Palm J., Hock R., Wellmann P.:
  Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)(2) absorbers produced by rapid thermal processing
  DOI: 10.1016/j.tsf.2012.11.069
  BibTeX: Download
• Ou Y., Jokubavicius V., Kaiser M., Wellmann P., Linnarsson MK., Yakimova R., Syväjärvi M., Ou H.:
  Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.1024
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• Linnarsson MK., Kaiser M., Liljedahl R., Jokubavicius V., Ou Y., Wellmann P., Ou H., Syväjärvi M.:
  Lateral boron distribution in polycrystalline SiC source materials
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.397
  BibTeX: Download
• Sun J., Kamiyama S., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.315
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• Jokubavicius V., Kaiser M., Hens P., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
  Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.19
  BibTeX: Download
• Wilhelm M., Kaiser M., Jokubavicius V., Syväjärvi M., Ou Y., Ou H., Wellmann P.:
  Photoluminescence topography of fluorescent SiC and its corresponding source crystals
  Silicon Carbide and Related Materials 2012 (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.421
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• Kaiser M., Hupfer T., Jokubavicius V., Schimmel S., Syväjärvi M., Ou Y., Ou H., Linnarsson MK., Wellmann P.:
  Polycrystalline SiC as source material for the growth of fluorescent SiC layers
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.39
  BibTeX: Download
• Schimmel S., Kaiser M., Hens P., Jokubavicius V., Liljedahl R., Sun J., Yakimova R., Ou Y., Ou H., Linnarsson MK., Wellmann P., Syväjärvi M.:
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  European Conference on Silicon Carbide and Related Materials 2012 (ECSCRM 2012) (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.185
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• Neubauer G., Salamon M., Roider F., Uhlmann N., Wellmann P.:
  Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
  9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.27
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• Möckel S., Hölzing A., Hock R., Wellmann P.:
  In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium
  In: Thin Solid Films 535 (2013), p. 133-137
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.11.081
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• Hupfer T., Hens P., Kaiser M., Jokubavicius V., Syväjärvi M., Wellmann P.:
  Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
  9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 (St. Petersburg, 09/02/2012 - 09/06/2012)
  DOI: 10.4028/www.scientific.net/MSF.740-742.52
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• Schuster M., Möckel S., Wibowo RA., Hock R., Wellmann P.:
  Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors
  2013 MRS Spring Meeting (San Francisco, CA, 04/01/2013 - 04/05/2013)
  DOI: 10.1557/opl.2013.980
  BibTeX: Download
• Künecke U., Hölzing A., Jost S., Lechner R., Vogt H., Heiss A., Palm J., Hock R., Wellmann P.:
  Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing
  In: Thin Solid Films 535 (2013), p. 97-101
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2012.11.069
  BibTeX: Download

2012

• Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
  Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
  In: Thin Solid Films 522 (2012), p. 2-6
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.10.177
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• Jokubavicius V., Hens P., Liljedahl R., Sun JW., Kaiser M., Wellmann P., Sano S., Yakimova R., Kamiyama S., Syväjärvi M.:
  Effects of source material on epitaxial growth of fluorescent SiC
  In: Thin Solid Films 522 (2012), p. 7-10
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.10.176
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• Wellmann P., Syväjärvi M., Kneissel M., Wang R.:
  Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
  Elsevier, 2012
  DOI: 10.1016/j.tsf.2012.04.001
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• Ou Y., Jokubavicius V., Hens P., Kaiser M., Wellmann P., Yakimova R., Syväjärvi M., Ou H.:
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  In: Optics Express 20 (2012), p. 7575-7579
  ISSN: 1094-4087
  DOI: 10.1364/OE.20.007575
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• Syväjärvi M., Müller J., Sun JW., Grivickas V., Ou Y., Jokubavicius V., Hens P., Kaiser M., Ariyawong K., Gulbinas K., Liljedahl R., Linnarsson MK., Kamiyama S., Wellmann P., Spiecker E., Ou H.:
  Fluorescent SiC as a new material for white LEDs
  In: Physica Scripta T148 (2012)
  ISSN: 0031-8949
  DOI: 10.1088/0031-8949/2012/T148/014002
  BibTeX: Download
• Hens P., Jokubavicius V., Liljedahl R., Wagner G., Yakimova R., Wellmann P., Syväjärvi M.:
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  In: Materials Letters 67 (2012), p. 300-302
  ISSN: 0167-577X
  DOI: 10.1016/j.matlet.2011.09.109
  BibTeX: Download
• Vasiliauskas R., Marinova M., Hens P., Wellmann P., Syvajarvi M., Yakimova R.:
  Nucleation Control of Cubic Silicon Carbide on 6H-Substrates
  In: Crystal Growth & Design 12 (2012), p. 197-204
  ISSN: 1528-7483
  DOI: 10.1021/cg200929r
  BibTeX: Download
• Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
  Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices
  Conference on Lasers and Electro-Optics 2012 (San Jose, California, 05/06/2012 - 05/11/2012)
  DOI: 10.1364/CLEO_SI.2012.CF3J.2
  BibTeX: Download

2011

• Maksimenko I., Wellmann P.:
  Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives
  In: Thin Solid Films 520 (2011), p. 1341-1347
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2011.04.142
  BibTeX: Download
• Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
  Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid
  In: Journal of Applied Physics 110 (2011)
  ISSN: 0021-8979
  DOI: 10.1063/1.3658634
  BibTeX: Download
• Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
  The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction
  In: Thin Solid Films 519 (2011), p. 7197-7200
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2010.12.138
  BibTeX: Download
• Maksimenko I., Wellmann P.:
  Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices
  In: Thin Solid Films 519 (2011), p. 5744-5747
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2010.12.209
  BibTeX: Download
• Karpinski H., Sakwe A., Fried MJ., Bänsch E., Wellmann P.:
  Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
  BibTeX: Download
• Hens P., Mueller J., Fahlbusch L., Spiecker E., Wellmann P., Spiecker E.:
  Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2010) (Oslo, 08/29/2010 - 09/02/2010)
  DOI: 10.4028/www.scientific.net/MSF.679-680.127
  BibTeX: Download

2010

• Tang K., Künecke U., Oehlschläger F., Hölzing A., Schurr R., Hock R., Wellmann P.:
  Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
  In: Solar Energy Materials and Solar Cells 94 (2010), p. 1875-1879
  ISSN: 0927-0248
  DOI: 10.1016/j.solmat.2010.06.002
  BibTeX: Download
• Maksimenko I., Groß M., Königer T., Münstedt H., Wellmann P.:
  Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites
  In: Thin Solid Films 518 (2010), p. 2910-2915
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2009.10.151
  BibTeX: Download
• Oehlschläger F., Müller J., Künecke U., Hoelzing A., Schurr R., Hock R., Wellmann P.:
  Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
  European Materials Research Society, spring meeting 2009 (Strasbourg, 06/08/2009 - 06/12/2009)
  DOI: 10.1016/j.egypro.2010.07.026
  BibTeX: Download
• Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
  Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)
  International Conference on Silicon Carbide and Related Materials Nürnberg (ICSCRM 2009) (Nürnberg, 10/11/2009 - 10/16/2009)
  DOI: 10.4028/www.scientific.net/MSF.645-648.151
  BibTeX: Download
• Hock R., Konias K., Perdicaro LMS., Magerl A., Hens P., Wellmann P.:
  Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2009) (Nürnberg, 10/11/2009 - 10/16/2009)
  DOI: 10.4028/www.scientific.net/MSF.645-648.29
  BibTeX: Download
• Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Hock R., Wellmann P.:
  Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content
  MRS Fall Meeting 2009 (Boston, Massachusetts, 11/30/2009 - 12/04/2009)
  DOI: 10.1557/PROC-1165-M02-02
  BibTeX: Download

2009

• Groß M., Linse N., Maksimenko I., Wellmann P.:
  Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices
  In: Advanced Engineering Materials 11 (2009), p. 295-301
  ISSN: 1438-1656
  DOI: 10.1002/adem.200800292
  BibTeX: Download
• Hölzing A., Schurr R., Schäfer H., Jaeger A., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
  Sulfo-selenization of metallic thin films of Cu, In and Cu-In
  In: Thin Solid Films 517 (2009), p. 2213-2217
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2008.10.089
  BibTeX: Download
• Stockmeier M., Müller R., Sakwe A., Wellmann P., Magerl A.:
  On the lattice parameters of silicon carbide
  In: Journal of Applied Physics 105 (2009)
  ISSN: 0021-8979
  DOI: 10.1063/1.3074301
  BibTeX: Download
• Hens P., Künecke U., Wellmann P.:
  Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  International Conference on Silicon Carbide and Related Materials 2007 (Otsu, 10/14/2007 - 10/19/2007)
  DOI: 10.4028/www.scientific.net/MSF.600-603.19
  BibTeX: Download
• Wellmann P., Konias K., Hens P., Hock R., Magerl A.:
  In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2008) (Barcelona, 09/07/2008 - 09/11/2008)
  DOI: 10.4028/www.scientific.net/MSF.615-617.23
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• Hens P., Syvaejaervi M., Oehlschläger F., Wellmann P., Yakimova R.:
  P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2008) (Barcelona, 09/07/2008 - 09/11/2008)
  DOI: 10.4028/www.scientific.net/MSF.615-617.85
  BibTeX: Download
• Oehlschläger F., Juillaguet S., Peyre H., Calmassel J., Wellmann P.:
  Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2008) (Barcelona, 09/07/2008 - 09/11/2008)
  DOI: 10.4028/www.scientific.net/MSF.615-617.259
  BibTeX: Download
• Stockmeier M., Sakwe A., Hens P., Wellmann P., Hock R., Magerl A.:
  Thermal Expansion Coefficients of 6H Silicon Carbide
  International Conference on Silicon Carbide and Related Materials 2007 (Otsu, 10/14/2007 - 10/19/2007)
  DOI: 10.4028/www.scientific.net/MSF.600-603.517
  BibTeX: Download
• Hens P., Künecke U., Konias K., Hock R., Wellmann P.:
  Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2008) (Barcelona, 09/07/2008 - 09/11/2008)
  DOI: 10.4028/www.scientific.net/MSF.615-617.11
  BibTeX: Download

2008

• Welte A., Waldauf C., Brabec C., Wellmann P., Brabec C.:
  Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
  In: Thin Solid Films 516 (2008), p. 7256-7259
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.12.025
  BibTeX: Download
• Sakwe A., Stockmeier M., Hens P., Müller R., Queren D., Künecke U., Konias K., Hock R., Magerl A., Pons M., Winnacker A., Wellmann P.:
  Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
  In: Physica Status Solidi B-Basic Solid State Physics 245 (2008), p. 1239-1256
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200743520
  BibTeX: Download
• Steeds JW., Sullivan W., Furkert SA., Evans GA., Wellmann P.:
  Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
  In: Physical Review B 77 (2008)
  ISSN: 1098-0121
  DOI: 10.1103/PhysRevB.77.195203
  BibTeX: Download
• Wellmann P., Sakwe A., Oehlschläger F., Hoffmann V., Zeimer U., Knauer A.:
  Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
  In: Journal of Crystal Growth 310 (2008), p. 955-958
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2007.11.064
  BibTeX: Download
• Wellmann P., Müller R., Sakwe A., Künecke U., Hens P., Stockmeier M., Konias K., Hock R., Magerl A., Pons M.:
  Bulk growth of SiC
  2008 MRS Spring Meeting (San Francisco, California, 03/24/2008 - 03/28/2008)
  DOI: 10.1557/PROC-1069-D01-01
  BibTeX: Download
• Groß M., Maksimenko I., Faber H., Linse N., Wellmann P.:
  Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique
  11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008) (Boston, Massachusetts, 06/01/2008 - 06/05/2008)
  BibTeX: Download

2007

• Chaussende D., Wellmann P., Pons M.:
  Status of SiC bulk growth processes
  In: Journal of Physics D-Applied Physics 40 (2007), p. 6150-6158
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/40/20/S02
  BibTeX: Download
• Groß M., Winnacker A., Wellmann P.:
  Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
  In: Thin Solid Films 515 (2007), p. 8567-8572
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2007.03.136
  BibTeX: Download
• Bathelt R., Buchhauser D., Gärditz C., Paetzold R., Wellmann P.:
  Light extraction from OLEDs for lighting applications through light scattering
  In: Organic Electronics 8 (2007), p. 293-299
  ISSN: 1566-1199
  DOI: 10.1016/j.orgel.2006.11.003
  BibTeX: Download
• Wellmann P., Karl U., Kleber S., Schmitt H.:
  Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
  In: Journal of Applied Physics 101 (2007)
  ISSN: 0021-8979
  DOI: 10.1063/1.2743090
  BibTeX: Download
• Wellmann P., Pons M.:
  Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
  In: Journal of Crystal Growth 303 (2007), p. 337-341
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2006.11.328
  BibTeX: Download
• Sakwe A., Müller R., Wellmann P.:
  Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (vol 289, pg 520, 2006)
  In: Journal of Crystal Growth 299 (2007), p. 234-234
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2006.10.196
  BibTeX: Download
• Konias K., Hock R., Stockmeier M., Wellmann P., Miller M., Ossege S., Magerl A.:
  In-situ X-ray measurements of defect generation during PVT growth of SiC
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2006) (Newcastle upon Tyne, 09/03/2006 - 09/07/2006)
  DOI: 10.4028/www.scientific.net/MSF.556-557.267
  BibTeX: Download
• Wellmann P., Hens P., Sakwe A., Queren D., Müller R., Durst K., Göken M.:
  Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth
  European Conference on Silicon Carbide and Related Materials (ECSCRM 20006) (Newcastle upon Tyne)
  DOI: 10.4028/www.scientific.net/MSF.556-557.259
  BibTeX: Download
• Sakwe A., Wellmann P.:
  Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals
  European Conference on Silicon Carbide and Related Materials (ECSCRM 20006) (Newcastle upon Tyne)
  DOI: 10.4028/www.scientific.net/MSF.556-557.263
  BibTeX: Download

2006

• Wellmann P., Müller R., Queren D., Sakwe A., Pons M.:
  Vapor growth of SiC bulk crystals and its challenge of doping
  In: Surface & Coatings Technology 201 (2006), p. 4026-4031
  ISSN: 0257-8972
  DOI: 10.1016/j.surfcoat.2006.08.033
  BibTeX: Download
• Müller R., Künecke U., Queren D., Sakwe A., Wellmann P.:
  Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
  In: Chemical Vapor Deposition 12 (2006), p. 557-561
  ISSN: 0948-1907
  DOI: 10.1002/cvde.200606474
  BibTeX: Download
• Wellmann P., Pons M.:
  Silicon carbide CVD for electronic device applications
  In: Chemical Vapor Deposition 12 (2006), p. 463-464
  ISSN: 0948-1907
  DOI: 10.1002/cvde.200690018
  BibTeX: Download
• Künecke U., Wellmann P.:
  Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
  In: European Physical Journal-Applied Physics 34 (2006), p. 209-213
  ISSN: 1286-0042
  DOI: 10.1051/epjap:2006055
  BibTeX: Download
• Topic I., Sockel HG., Wellmann P., Göken M.:
  The influence of microstructure on the magnetic properties of WC/Co hardmetals
  In: Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 423 (2006), p. 306-312
  ISSN: 0921-5093
  DOI: 10.1016/j.msea.2006.02.018
  BibTeX: Download
• Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
  Electronic Raman Studies of Shallow Donors in Silicon Carbide
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.579
  BibTeX: Download
• Müller R., Künecke U., Weingärtner R., Maier M., Wellmann P.:
  Anomalous charge carrier transport phenomena in highly aluminum doped SiC
  In: Physica Status Solidi C: Conferences 3 (2006), p. 554-557
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564150
  BibTeX: Download
• Wellmann P., Queren D., Müller R., Sakwe A., Künecke U.:
  Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.79
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• Chaussende D., Wellmann P., Ucar M., Pons M., Madar R.:
  In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.63
  BibTeX: Download
• Müller R., Künecke U., Thuaire A., Mermoux M., Pons M., Wellmann P.:
  Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering
  In: Physica Status Solidi C: Conferences 3 (2006), p. 558-561
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564148
  BibTeX: Download
• Wellmann P., Müller R., Pons M.:
  Modeling and experimental verification of SiC M-PVT bulk crystal growth
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh, Pennsylvania, 09/18/2005 - 09/23/2005)
  DOI: 10.4028/www.scientific.net/MSF.527-529.75
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• Sakwe A., Müller R., Masri P., Wellmann P.:
  Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals
  In: Physica Status Solidi C: Conferences 3 (2006), p. 562-566
  ISSN: 1610-1634
  DOI: 10.1002/pssc.200564152
  BibTeX: Download
• Sakwe A., Müller R., Queren D., Künecke U., Wellmann P.:
  Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 3 (2006), p. 567-570
  ISSN: 1862-6351
  DOI: 10.1002/pssc.200564153
  BibTeX: Download

2005

• Wellmann P., Straubinger T., Künecke U., Müller R., Sakwe A., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L., Camassel J.:
  Optical mapping of aluminum doped p-type SiC wafers
  In: Physica Status Solidi A-Applications and Materials Science 202 (2005), p. 598-601
  ISSN: 0031-8965
  DOI: 10.1002/PSSA.200460436
  BibTeX: Download
• Wellmann P., Desperrier P., Müller R., Straubinger T., Winnacker A., Baillet F., Blanquet E., Dedulle J., Pons M.:
  SiC single crystal growth by a modified physical vapor transport technique
  In: Journal of Crystal Growth 275 (2005), p. E555-E560
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.070
  BibTeX: Download
• Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
  In situ visualization of SiC physical vapor transport crystal growth
  In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.253
  BibTeX: Download
• Müller R., Künecke U., Weingärtner R., Schmitt H., Desperrier P., Wellmann P.:
  High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/03/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.31
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• Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
  Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/03/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.445
  BibTeX: Download
• Pons M., Blanquet E., Dedulle J., Ucar M., Wellmann P., Danielsson Ö., Ferret P., Di Cioccio L., Baillet F., Chaussende D., Madar R.:
  Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.3
  BibTeX: Download
• Sakwe A., Herro ZG., Wellmann P.:
  Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.283
  BibTeX: Download
• Wellmann P., Müller R., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L.:
  Micro-optical characterization study of highly p-type doped SiC : Al wafers
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.393
  BibTeX: Download
• Wellmann P., Straubinger T., Desperrier P., Müller R., Künecke U., Sakwe A., Schmitt H., Winnacker A., Blanquet E., Dedulle J., Pons M.:
  Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
  Euopean Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Bologna, 08/31/2004 - 09/04/2004)
  DOI: 10.4028/www.scientific.net/MSF.483-485.25
  BibTeX: Download

2004

• Wellmann P., Albrecht A., Künecke U., Birkmann B., Müller G., Jurisch M.:
  Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
  In: European Physical Journal-Applied Physics 27 (2004), p. 357-361
  ISSN: 1286-0042
  DOI: 10.1051/epjap:2004041
  BibTeX: Download
• Müller R., Desperrier P., Seitz C., Weißer M., Magerl A., Maier M., Winnacker A., Wellmann P.:
  In-situ Er-doping of SiC bulk single crystals
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.723
  BibTeX: Download
• Wellmann P., Herro ZG., Sakwe A., Masri P., Bogdanov M., Karpov S., Kulik A., Ramm M., Makarov Y.:
  Analysis of graphitization during physical vapor transport growth of silicon carbide
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.55
  BibTeX: Download
• Desperrier P., Müller R., Winnacker A., Wellmann P.:
  Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
  International Conference on Silicon Carbide and Related Materials (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.727
  BibTeX: Download
• Weingärtner R., Wellmann P., Winnacker A.:
  On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.645
  BibTeX: Download
• Weißer M., Seitz C., Wellmann P., Hock R., Magerl A.:
  Structural defects in SiC crystals investigated by high energy x-ray diffraction
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2003) (Lyon, 10/05/2003 - 10/10/2003)
  DOI: 10.4028/www.scientific.net/MSF.457-460.339
  BibTeX: Download

2003

• Wellmann P., Weingärtner R.:
  Determination of doping levels and their distribution in SiC by optical techniques
  E-MRS 2002 Symposium E: Advanced Characterisation of Semiconductors (Strasbourg, 06/17/2002 - 06/21/2002)
  DOI: 10.1016/S0921-5107(02)00707-9
  BibTeX: Download

2002

• Wellmann P., Weingärtner R., Bickermann M., Straubinger T., Winnacker A.:
  Optical quantitative determination of doping levels and their distribution in SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(01)00976-X
  BibTeX: Download
• Birkmann B., Weingärtner R., Wellmann P., Wiedemann B., Müller G.:
  Analysis of silicon incorporation into VGF-grown GaAs
  In: Journal of Crystal Growth 237 (2002), p. 345-349
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)01935-2
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• Straubinger T., Bickermann M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
  In: Journal of Crystal Growth 240 (2002), p. 117-123
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(02)00917-X
  BibTeX: Download
• Weingärtner R., Wellmann P., Bickermann M., Hofmann HD., Straubinger T., Winnacker A.:
  Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
  In: Applied Physics Letters 80 (2002), p. 70-72
  ISSN: 0003-6951
  DOI: 10.1063/1.1430262
  BibTeX: Download
• Wellmann P., Herro ZG., Straubinger T., Winnacker A.:
  'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2001) (Tsukuba, 10/28/2001 - 11/02/2001)
  DOI: 10.4028/www.scientific.net/MSF.389-393.91
  BibTeX: Download
• Straubinger T., Bickermann M., Rasp M., Weingärtner R., Wellmann P., Winnacker A.:
  Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2001) (Tsukuba, 10/28/2001 - 11/02/2001)
  DOI: 10.4028/www.scientific.net/MSF.389-393.131
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• Weingärtner R., Albrecht A., Wellmann P., Winnacker A.:
  Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.341
  BibTeX: Download
• Bickermann M., Weingärtner R., Herro ZG., Hofmann HD., Künecke U., Wellmann P., Winnacker A.:
  Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.337
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• Weingärtner R., Bickermann M., Herro ZG., Künecke U., Sakwe A., Wellmann P., Winnacker A.:
  Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.333
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• Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
  Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
  European Conference on Silicon Carbide and Related Materials (Ecscrm 2002) (Linkoping, 09/01/2002 - 09/05/2002)
  DOI: 10.4028/www.scientific.net/MSF.433-436.9
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2001

• Bickermann M., Hofmann HD., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  On the preparation of semi-insulating SiC bulk crystals by the PVT technique
  In: Applied Surface Science 184 (2001), p. 84-89
  ISSN: 0169-4332
  DOI: 10.1016/S0169-4332(01)00481-0
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• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of source material on silicon carbide vapor transport growth process
  In: Journal of Crystal Growth 225 (2001), p. 312-316
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(01)00881-8
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• Weingärtner R., Bickermann M., Bushevoy S., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00599-7
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• Wellmann P., Bushevoy S., Weingärtner R.:
  Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 352-356
  ISSN: 0921-5107
  DOI: 10.1016/S0921-5107(00)00598-5
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• Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P., Hofmann HD.:
  Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
  3rd European Conference on Silicon Carbide and Related Materials (Kloster Banz, 09/03/2000 - 09/07/2000)In: Materials Science Forum, Uetikon-Zuerich, Switzerland: Trans Tech Publications, 2001
  DOI: 10.4028/www.scientific.net/MSF.353-356.65
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• Weingärtner R., Bickermann M., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
  Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
  3rd European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Klöoster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.397
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• Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
  3rd European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.11
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• Straubinger T., Wellmann P., Winnacker A.:
  Investigation of a PVT SiC-growth set-up modified by an additional gas flow
  3rd European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.33
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• Straubinger T., Bickermann M., Hofmann HD., Weingärtner R., Wellmann P., Winnacker A.:
  Stability criteria for 4H-SiC bulk growth
  European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.25
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• Bickermann M., Hofmann HD., Rasp M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
  Study of boron incorporation during PVT growth of p-type SiC crystals
  European Conference on Silicon Carbide and Related Materials (ECSCRM2000) (Kloster Banz, 09/03/2000 - 09/07/2000)
  DOI: 10.4028/www.scientific.net/MSF.353-356.49
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2000

• Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
  In: Journal of Crystal Growth 216 (2000), p. 263-272
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(00)00372-9
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• Selder M., Kadinski L., Durst F., Wellmann P., Straubinger T., Hofmann HD.:
  Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
  In: Journal of Crystal Growth 211 (2000), p. 333-338
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(99)00853-2
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• Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P.:
  Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
  International Conference on Silicon Carbide and Related Materials (ICSCRM1999) (Research Triangle Park, North Carolina, 10/10/1999 - 10/15/1999)
  DOI: 10.4028/www.scientific.net/MSF.338-342.31
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• Straubinger T., Bickermann M., Kadinski L., Müller G., Selder M., Wellmann P., Winnacker A.:
  Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
  International Conference on Silicon Carbide and Related Materials (ICSCRM99) (Research Triangle Park, North Carolina, 10/10/1999 - 10/15/1999)
  DOI: 10.4028/www.scientific.net/MSF.338-342.39
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• Wellmann P., Bickermann M., Kadinski L., Selder M., Straubinger T., Winnacker A.:
  Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
  International Conference on Silicon Carbide and Related Materials (ICSCRM99) (Research Triangle Park, North Carolina, 10/10/1999 - 10/15/1999)
  DOI: 10.4028/www.scientific.net/MSF.338-342.71
  BibTeX: Download