Publications

Prof. Dr.-Ing. Peter Wellmann - Publications

Job title: Projektleitung Forschungsgruppe CGL (Crystal Growth Lab)
Organization: Department of Materials Science and Engineering
Working group: Chair of Materials for Electronics and Energy Technology
Phone number: +49 9131 85-27635
Fax number: +49 9131 85-28495
Email: peter.wellmann@fau.de
Website: http://crystals.techfak.fau.de/
Address:

Martensstr. 7
91058 Erlangen

Room 392
Office hours: Room 3.92, Terminabsprache per Email (peter.wellmann@fau.de)

2019

Arzig M., Salamon M., Uhlmann N., Wellmann P.:
Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 09/02/18 - 09/06/18)
DOI: 10.4028/www.scientific.net/MSF.963.14
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Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals
In: Materials 12 (2019), Art.Nr.: 2591
ISSN: 1996-1944
DOI: 10.3390/ma12162591
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Hassanien AE., Abdelhaleem S., Ahmad R., Schuster M., Moustafa SH., Distaso M., Peukert W., Wellmann P.:
Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique
In: Journal of Nanoelectronics and Optoelectronics 14 (2019), p. 1394-1400
ISSN: 1555-130X
DOI: 10.1166/jno.2019.2633
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Lin L., Ou Y., Jokubavicius V., Syväjärvi M., Liang M., Liu Z., Yi X., Schuh P., Wellmann P., Herstrøm B., Jensen F., Ou H.:
An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
In: Materials Science in Semiconductor Processing 91 (2019), p. 9-12
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2018.10.028
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Salamon M., Arzig M., Uhlmann N., Wellmann P.:
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
In: Materials Science Forum 963 (2019), p. 5-9
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.5
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Schuh P., Künecke U., Litrico G., Mauceri M., La Via F., Monnoye S., Zielinski M., Wellmann P.:
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
In: Materials Science Forum 963 (2019), p. 149-152
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.149
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Schuh P., La Via F., Mauceri M., Zielinski M., Wellmann P.:
Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth
In: Materials 12 (2019), Art.Nr.: 2179
ISSN: 1996-1944
DOI: 10.3390/ma12132179
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Schuh P., Steiner J., La Via F., Mauceri M., Zielinski M., Wellmann P.:
Limitations during Vapor Phase Growth of Bulk (100)
3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
In: Materials 12 (2019), p. 1-8
ISSN: 1996-1944
DOI: 10.3390/ma12152353
URL: https://www.mdpi.com/1996-1944/12/15/2353
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Schuster M., Stapf D., Osterrieder T., Barthel V., Wellmann P.:
Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure
In: Coatings 9 (2019), p. 1-16
ISSN: 2079-6412
DOI: 10.3390/coatings9080484
URL: https://www.mdpi.com/2079-6412/9/8/484
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Schöler M., Brecht C., Wellmann P.:
Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide
In: Materials 12 (2019), Art.Nr.: 2487
ISSN: 1996-1944
DOI: 10.3390/ma12152487
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Schöler M., Lederer M., Wellmann P.:
Deep electronic levels in n-type and p-type 3C-SiC
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 09/02/18 - 09/06/18)
DOI: 10.4028/www.scientific.net/MSF.963.297
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Schöler M., Schuh P., Steiner J., Wellmann P.:
Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
In: Materials Science Forum 963 (2019), p. 157-160
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.157
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Steiner J., Arzig M., Denisov A., Wellmann P.:
Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
In: Crystal Research and Technology (2019), Art.Nr.: 1900121
ISSN: 0232-1300
DOI: 10.1002/crat.201900121
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Steiner J., Arzig M., Hsiao TC., Wellmann P.:
Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 09/02/18 - 09/06/18)
DOI: 10.4028/www.scientific.net/MSF.963.42
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Steiner J., Roder M., Nguyen BD., Sandfeld S., Danilewsky A., Wellmann P.:
Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC
In: Materials 12 (2019), Art.Nr.: 2207
ISSN: 1996-1944
DOI: 10.3390/ma12132207
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Tarekegne AT., Norrman K., Jokubavicius V., Syväjärvi M., Schuh P., Wellmann P., Ou H.:
Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC
In: Applied Physics B-Lasers and Optics 125 (2019), Art.Nr.: 172
ISSN: 0946-2171
DOI: 10.1007/s00340-019-7279-8
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2018

Abdelhaleem S., Hassanien A., Ahmad R., Schuster M., Ashour A., Distaso M., Peukert W., Wellmann P.:
Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique
In: Journal of Electronic Materials (2018)
ISSN: 0361-5235
DOI: 10.1007/s11664-018-6636-4
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Arzig M., Hsiao T., Wellmann P.:
Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules
In: Advanced Materials Proceedings 3 (2018), p. 540-543
ISSN: 2002-4428
DOI: 10.5185/amp.2018/1414
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Arzig M., Salamon M., Uhlmann N., Johansen BA., Wellmann P.:
Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
In: Materials Science Forum 924 (2018), p. 245-248
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.924.245
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Fahlbusch L., Wellmann P.:
Solution Growth of Silicon Carbide Using the Vertical Bridgman Method
In: Crystal Research and Technology (2018), Art.Nr.: 1800019
ISSN: 0232-1300
DOI: 10.1002/crat.201800019
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La Via F., Severino A., Anzalone R., Bongiorno C., Litrico G., Mauceri M., Schöler M., Schuh P., Wellmann P.:
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
In: Materials Science in Semiconductor Processing 78 (2018), p. 57-68
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2017.12.012
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Schimmel S., Duchstein P., Steigerwald T., Kimmel AC., Schlücker E., Zahn D., Niewa R., Wellmann P.:
In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
In: Journal of Crystal Growth 498 (2018), p. 214-223
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.06.024
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Schuster M., Sisterhenn P., Graf L., Wellmann P.:
Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques
In: International Journal of Nanoparticle Research 2 (2018)
URL: http://escipub.com/ijnr-2017-12-1501/
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Wellmann P.:
Review of SiC crystal growth technology
In: Semiconductor Science and Technology 33 (2018), p. 1-21
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aad831
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2017

Häusler J., Schimmel S., Wellmann P., Schnick W.:
Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
In: Chemistry - A European Journal 23 (2017), p. 12275-12282
ISSN: 0947-6539
DOI: 10.1002/chem.201701081
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Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
In: Journal of Crystal Growth 479 (2017), p. 59-66
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.027
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Schuh P., Arzig M., Litrico G., La Via F., Mauceri M., Wellmann P.:
Growing bulk-like 3C-SiC from seeding material produced by CVD
In: physica status solidi (a) (2017), Art.Nr.: 1600429
ISSN: 1862-6300
DOI: 10.1002/pssa.201600429
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Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers
In: Materials Science Forum 897 (2017), p. 15-18
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.897.15
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Schuh P., Schöler M., Wilhelm M., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
In: Journal of Crystal Growth 478 (2017), p. 159-162
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.002
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Schuster M., Groß S., Roider F., Maksimenko I., Wellmann P.:
Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires
In: International Journal of Nanoparticles and Nanotechnology 3 (2017)
URL: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
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Schöler M., Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers
In: Advanced Materials Proceedings 2 (2017), p. 774-778
ISSN: 2002-4428
DOI: 10.5185/amp.2017/419
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Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates
In: Journal of Materials Science: Materials in Electronics (2017), p. 1-9
ISSN: 1573-482X
DOI: 10.1007/s10854-017-6467-8
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Wei Y., Künecke U., Jokubavicius V., Syväjärvi M., Wellmann P., Ou H.:
Low Temperature Photoluminescence of 6H fluorescent SiC
E-MRS Spring Meeting 2017 (Strasbourg, 05/22/17 - 05/26/17)
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Wei Y., Künecke U., Wellmann P., Ou H.:
Detection of effective recombination centers in fluorescent SiC using thermally
stimulated luminescence
5th international workshop on LED and Solar Applications (Lyngby, 09/13/17 - 09/14/17)
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Wei Y., Künecke U., Wellmann P., Ou H.:
Thermally Stimulated Luminescence in 6H Fluorescent SiC
International Conference on Silicon Carbide and Related Materials (Washington, DC, 09/17/17 - 09/22/17)
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Wellmann P.:
Materials-Related Solutions for Industry
In: Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (ed.): Materials Innovation for the global circular economy and sustainable society, 2017 (WORLD MATERIALS SUMMITS, Vol.6)
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Wellmann P.:
Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond
In: Zeitschrift fur Anorganische und Allgemeine Chemie 643 (2017), p. 1312-1322
ISSN: 1521-3749
DOI: 10.1002/zaac.201700270
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Wilhelm M., Syväjärvi M., Wellmann P.:
Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence
In: Advanced Materials Proceedings 2 (2017), p. 769-773
ISSN: 2002-4428
DOI: 10.5185/amp.2017/415
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Yakimova R., Ivanov IG., Vines L., Linnarsson MK., Gällström A., Giannazzo F., Roccaforte F., Wellmann P., Syväjärvi M., Jokubavicius V.:
Growth, defects and doping of 3C-SiC on hexagonal polytypes
In: ECS Journal of Solid State Science and Technology 6 (2017), p. P741-P745
ISSN: 2162-8769
DOI: 10.1149/2.0281710jss
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2016

Fahlbusch L., Schöler M., Mattle P., Schnitzer S., Khodamoradi H., Iwamoto N., Svensson BG., Wellmann P.:
High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
In: Materials Science Forum 858 (2016), p. 33-36
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.33
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Salamon M., Reisinger S., Schlechter T., Schmitt M., Hofmann T., Uhlmann N., Schug S., Arlt W., Fahlbusch L., Arzig M., Wellmann P.:
X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry
WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY (Iguassu Falls, 09/26/16 - 09/29/16)
URL: http://www.isipt.org/world-congress/8.html
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Schimmel S., Künecke U., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
In: Journal of Crystal Growth 456 (2016), p. 33-42
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2016.08.067
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Schuh P., Vecera P., Hirsch A., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates
In: Materials Science Forum 858 (2016), p. 89-92
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.89
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Schuster M., Wernicke T., Möckel S., Wellmann P.:
Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions
In: International Journal of Nanoparticles and Nanotechnology 2:006 (2016)
URL: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
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Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
In: Journal of Materials Science: Materials in Electronics 1-9 (2016), p. 506-511
ISSN: 1573-482X
DOI: 10.1109/PVSC.2016.7749646
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Sun J., Jokubavicius V., Gao L., Booker I., Jansson M., Liu X., Hofmann JP., Hensen EJ., Linnarsson MK., Wellmann P., Ramiro I., Marti A., Yakimova R., Syväjärvi M.:
Solar driven energy conversion applications based on 3C-SiC
In: Materials Science Forum 858 (2016), p. 1028-1031
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.1028
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Syväjärvi M., Ma Q., Jokubavicius V., Galeckas A., Sun J., Liu X., Jansson M., Wellmann P., Linarsson M., Runde P., Johansen BA., Thøgersen A., Diplas S., Carvalho PA., Løvvik OM., Wright DN., Azarov AY., Svensson BG.:
Cubic silicon carbide as a potential photovoltaic material
In: Solar Energy Materials and Solar Cells 145 (2016), p. 104-108
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2015.08.029
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Wellmann P., Fahlbusch L., Salamon M., Uhlmann N.:
Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
In: Materials Science Forum 858 (2016), p. 49-52
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.49
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2015

Beier M., Trempa M., Seebeck J., Reimann C., Wellmann P., Gründig-Wendrock B., Friedrich J., Dadzis K., Sylla L., Richter T.:
Feedstock recharging during directional solidification of silicon ingots for PV applications
29th European Photovoltaic Solar Energy Conference and Exhibition (Amsterdam, 09/22/14 - 09/26/14)
DOI: 10.4229/EUPVSEC20142014-2AV.1.11
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Hertweck B., Schimmel S., Steigerwald T., Alt N., Wellmann P., Schlücker E.:
Ceramic liner technology for ammonoacidic synthesis
In: Journal of Supercritical Fluids 99 (2015), p. 76-87
ISSN: 0896-8446
DOI: 10.1016/j.supflu.2015.01.017
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Jokubavicius V., Yazdi GR., Liljedahl R., Ivanov IG., Sun J., Liu X., Schuh P., Wilhelm M., Wellmann P., Yakimova R., Syväjärvi M.:
Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
In: Crystal Growth & Design 15 (2015), p. 2940-2947
ISSN: 1528-7483
DOI: 10.1021/acs.cgd.5b00368
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Künecke U., Hetzner C., Möckel S., Yoo HS., Hock R., Wellmann P.:
Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence
In: Thin Solid Films 582 (2015), p. 387-391
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.10.063
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Möckel S., Wernicke T., Arzig M., Köder P., Brandl M., Ahmad R., Distaso M., Peukert W., Hock R., Wellmann P.:
Low temperature formation of CuIn1 - xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors
In: Thin Solid Films 582 (2015), p. 60-68
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.11.060
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Rankl D., Jokubavicius V., Syväjärvi M., Wellmann P.:
Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
In: Materials Science Forum 821-823 (2015), p. 77-80
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.77
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Schimmel S., Lindner M., Steigerwald T., Hertweck B., Richter TM., Künecke U., Alt N., Niewa R., Schlücker E., Wellmann P.:
Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
In: Journal of Crystal Growth 418 (2015), p. 64-69
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2015.02.020
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Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2Solar Cell Absorber Layer
In: Energy Procedia 84 (2015), p. 62-70
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2015.12.296
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Wellmann P., Neubauer G., Fahlbusch L., Salamon M., Uhlmann N.:
Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
In: Crystal Research and Technology 50 (2015), p. 2-9
ISSN: 0232-1300
DOI: 10.1002/crat.201400216
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Wilhelm M., Beck F., Wellmann P.:
Towards the growth of SiGeC epitaxial layers for the application in Si solar cells
In: Energy Procedia 84 (2015), p. 236-241
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2015.12.319
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Wilhelm M., Rieth M., Brandl M., Wibowo RA., Hock R., Wellmann P.:
Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C
In: Thin Solid Films 577 (2015), p. 88-93
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2015.01.049
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Zweschke A., Wellmann P.:
Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation
In: Thin Solid Films 582 (2015), p. 397-400
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.11.002
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Zweschke A., Wellmann P.:
Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
In: Energy Procedia 84 (2015), p. 86-92
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2015.12.299
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2014

Grivickas V., Gulbinas K., Jokubavicius V., Sun J., Karaliūnas M., Kamiyama S., Linnarsson MK., Kaiser M., Wellmann P., Syväjärvi M.:
Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
In: IOP Conference Series: Materials Science and Engineering 56 (2014), Art.Nr.: 012004
ISSN: 1757-8981
DOI: 10.1088/1757-899X/56/1/012004
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Kaiser M., Schimmel S., Jokubavicius V., Linnarsson MK., Ou H., Syväjärvi M., Wellmann P.:
Nucleation and growth of polycrystalline SiC
In: IOP Conference Series: Materials Science and Engineering 56 (2014), Art.Nr.: 012001
ISSN: 1757-8981
DOI: 10.1088/1757-899X/56/1/012001
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Neubauer G., Salamon M., Uhlmann N., Wellmann P.:
Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
In: Materials Science Forum 778-780 (2014), p. 9-12
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.9
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Ou H., Ou Y., Argyraki A., Schimmel S., Kaiser M., Wellmann P., Linnarsson MK., Jokubavicius V., Sun J., Liljedahl R., Syväjärvi M.:
Advances in wide bandgap SiC for optoelectronics
In: European Physical Journal B 87 (2014)
ISSN: 1434-6028
DOI: 10.1140/epjb/e2014-41100-0
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Schimmel S., Kaiser M., Jokubavicius V., Ou Y., Hens P., Linnarsson MK., Sun J., Liljedahl R., Ou H., Syväjärvi M., Wellmann P.:
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
In: IOP Conference Series: Materials Science and Engineering 56 (2014)
ISSN: 1757-8981
DOI: 10.1088/1757-899X/56/1/012002
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Schimmel S., Künecke U., Baser HH., Steigerwald T., Hertweck B., Alt N., Schlücker E., Schwieger W., Wellmann P.:
Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
In: Physica Status Solidi (C) Current Topics in Solid State Physics 11 (2014), p. 1439-1442
ISSN: 1862-6351
DOI: 10.1002/pssc.201300656
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Wellmann P., Syvaejaervi M., Ou H. (ed.):
Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications, Proceedings of the E-MRS 2013 Spring Meeting, Symposium G
IOP Publishing Ltd, 2014
(IOP Conference Series: Materials Science and Engineering, Vol. 56, Number 1)
DOI: 10.1088/1757-899X/56/1/011001
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Wellmann P., Syväjärvi M., Ou H.:
Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
EMRS 2013 Spring Meeting, Symposium G (Strasbourg, 05/27/13 - 05/31/13)
DOI: 10.1088/1757-899X/56/1/011001
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Wibowo RA., Möckel S., Yoo HS., Hölzing A., Hock R., Wellmann P.:
Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques
In: Journal of Alloys and Compounds 588 (2014), p. 254-258
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2013.10.248
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2013

Benz F., Strunk HP., Schaab J., Künecke U., Wellmann P.:
Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
In: Journal of Applied Physics 114 (2013), Art.Nr.: 073518
ISSN: 0021-8979
DOI: 10.1063/1.4818815
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Hupfer T., Hens P., Kaiser M., Jokubavicius V., Syväjärvi M., Wellmann P.:
Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
In: Materials Science Forum 740-742 (2013), p. 52-55
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.52
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Jokubavicius V., Kaiser M., Hens P., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates
In: Materials Science Forum 740-742 (2013), p. 19-22
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.19
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Kaiser M., Hupfer T., Jokubavicius V., Schimmel S., Syväjärvi M., Ou Y., Ou H., Linnarsson MK., Wellmann P.:
Polycrystalline SiC as source material for the growth of fluorescent SiC layers
In: Materials Science Forum 740-742 (2013), p. 39-42
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.39
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Künecke U., Hölzing A., Jost S., Lechner R., Vogt H., Heiss A., Palm J., Hock R., Wellmann P.:
Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing
In: Thin Solid Films 535 (2013), p. 97-101
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.11.069
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Linnarsson MK., Kaiser M., Liljedahl R., Jokubavicius V., Ou Y., Wellmann P., Ou H., Syväjärvi M.:
Lateral boron distribution in polycrystalline SiC source materials
In: Materials Science Forum 740-742 (2013), p. 397-400
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.397
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Möckel S., Hölzing A., Hock R., Wellmann P.:
In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium
In: Thin Solid Films 535 (2013), p. 133-137
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.11.081
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Neubauer G., Salamon M., Roider F., Uhlmann N., Wellmann P.:
Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
In: Materials Science Forum 740-742 (2013), p. 27-30
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.27
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Ou Y., Jokubavicius V., Kaiser M., Wellmann P., Linnarsson MK., Yakimova R., Syväjärvi M., Ou H.:
Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC
In: Materials Science Forum 740-742 (2013), p. 1024-1027
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.1024
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Schimmel S., Kaiser M., Hens P., Jokubavicius V., Liljedahl R., Sun J., Yakimova R., Ou Y., Ou H., Linnarsson MK., Wellmann P., Syväjärvi M.:
Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
In: Materials Science Forum 740-742 (2013), p. 185-188
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.185
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Schuster M., Möckel S., Wibowo RA., Hock R., Wellmann P.:
Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors
In: Materials Research Society Symposium - Proceedings 1538 (2013), p. 203-208
ISSN: 0272-9172
DOI: 10.1557/opl.2013.980
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Sun J., Kamiyama S., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
In: Materials Science Forum 740-742 (2013), p. 315-318
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.315
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Wibowo RA., Möckel S., Yoo HS., Hetzner C., Hölzing A., Wellmann P., Hock R.:
Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
In: Materials Chemistry and Physics 142 (2013), p. 311-317
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2013.07.021
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Wilhelm M., Kaiser M., Jokubavicius V., Syväjärvi M., Ou Y., Ou H., Wellmann P.:
Photoluminescence topography of fluorescent SiC and its corresponding source crystals
In: Materials Science Forum 740-742 (2013), p. 421-424
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.740-742.421
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Zheng Q., Crocco J., Bensalah H., Wellmann P., Osvet A., Künecke U., Dierre F., Vela O., Perez J., Dieguez E.:
Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
In: Journal of Crystal Growth 381 (2013), p. 15-21
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.06.033
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2012

Hens P., Jokubavicius V., Liljedahl R., Wagner G., Yakimova R., Wellmann P., Syväjärvi M.:
Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
In: Materials Letters 67 (2012), p. 300-302
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2011.09.109
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Hens P., Müller J., Spiecker E., Wellmann P.:
Defect structures at the silicon/3C-SiC interface
In: Materials Science Forum 717-720 (2012), p. 423-426
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.423
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Hens P., Müller J., Wagner G., Liljedahl R., Yakimova R., Spiecker E., Wellmann P., Syväjärvi M.:
Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
In: Materials Science Forum 717-720 (2012), p. 177-180
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.177
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Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
In: Thin Solid Films 522 (2012), p. 2-6
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.177
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Jokubavicius V., Hens P., Liljedahl R., Sun JW., Kaiser M., Wellmann P., Sano S., Yakimova R., Kamiyama S., Syväjärvi M.:
Effects of source material on epitaxial growth of fluorescent SiC
In: Thin Solid Films 522 (2012), p. 7-10
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.176
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Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices
In: Conference on Lasers and Electro-Optics (2012), Art.Nr.: CF3J.2.
ISSN: 2160-9020
DOI: 10.1364/CLEO_SI.2012.CF3J.2
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Ou Y., Jokubavicius V., Hens P., Kaiser M., Wellmann P., Yakimova R., Syväjärvi M., Ou H.:
Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
In: Optics Express 20 (2012), p. 7575-7579
ISSN: 1094-4087
DOI: 10.1364/OE.20.007575
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Syväjärvi M., Müller J., Sun JW., Grivickas V., Ou Y., Jokubavicius V., Hens P., Kaiser M., Ariyawong K., Gulbinas K., Liljedahl R., Linnarsson MK., Kamiyama S., Wellmann P., Spiecker E., Ou H.:
Fluorescent SiC as a new material for white LEDs
In: Physica Scripta T148 (2012), Art.Nr.: 014002
ISSN: 0031-8949
DOI: 10.1088/0031-8949/2012/T148/014002
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Vasiliauskas R., Marinova M., Hens P., Wellmann P., Syvajarvi M., Yakimova R.:
Nucleation Control of Cubic Silicon Carbide on 6H-Substrates
In: Crystal Growth & Design 12 (2012), p. 197-204
ISSN: 1528-7483
DOI: 10.1021/cg200929r
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Wellmann P., Syväjärvi M., Kneissel M. (ed.):
Engineering of Wide Bandgap Semiconductor Materials for Energy Saving, Proceedings of the E-MRS 2011 Spring Meeting, Symposium Q
Elsevier, 2012
(Thin Solid Films, Vol. 522)
DOI: 10.1016/j.tsf.2012.04.001
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Wellmann P., Syväjärvi M., Kneissel M., Wang R.:
Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
In: Thin Solid Films 522 (2012), p. 1-1
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.04.001
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(anderer)

2011

Hens P., Mueller J., Fahlbusch L., Spiecker E., Wellmann P., Spiecker E.:
Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy
In: Materials Science Forum 679-680 (2011), p. 127-130
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.679-680.127
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Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction
In: Thin Solid Films 519 (2011), p. 7197-7200
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.12.138
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Karpinski H., Sakwe A., Fried MJ., Bänsch E., Wellmann P.:
Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
In: Materials Science Forum 679-680 (2011), p. 277-281
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.679-680.277
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Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid
In: Journal of Applied Physics 110 (2011), Art.Nr.: 104301
ISSN: 0021-8979
DOI: 10.1063/1.3658634
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Maksimenko I., Wellmann P.:
Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices
In: Thin Solid Films 519 (2011), p. 5744-5747
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.12.209
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Maksimenko I., Wellmann P.:
Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives
In: Thin Solid Films 520 (2011), p. 1341-1347
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.04.142
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Richter H., Wellmann P. (ed.):
From Semiconductors to New Energy – the PV Value added Chain, Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting2011
(Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France)
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Wellmann P.:
Kooperative Promotionen mit Fachhochschulen in Zusammenarbeit mit der technischen Fakultät der Universität Erlangen-Nürnberg; erschienen in „Ingenieurpromotion – Stärken und Qualitätssicherung, Beiträge eines gemeinsamen Symposiums von acatech, TU9, ARGE TU/TH und 4ing
In: Horst Hippler (ed.): Ingenieurpromotion – Stärken und Qualitätssicherung, Berlin Heidelberg: Springer Verlag, 2011, p. 125-132 (acatech Diskussion)
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2010

Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)
In: Materials Science Forum 645-648 (2010), p. 151-154
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.645-648.151
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Hock R., Konias K., Perdicaro LMS., Magerl A., Hens P., Wellmann P.:
Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction
In: Materials Science Forum 645-648 (2010), p. 29-32
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.645-648.29
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Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Hock R., Wellmann P.:
Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content
In: Materials Research Society Symposium - Proceedings 1165 (2010), p. 25-30
ISSN: 0272-9172
DOI: 10.1557/PROC-1165-M02-02
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Maksimenko I., Groß M., Königer T., Münstedt H., Wellmann P.:
Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites
In: Thin Solid Films 518 (2010), p. 2910-2915
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.10.151
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Oehlschläger F., Müller J., Künecke U., Hoelzing A., Schurr R., Hock R., Wellmann P.:
Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
In: Energy Procedia 2 (2010), p. 183-188
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2010.07.026
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Tang K., Künecke U., Oehlschläger F., Hölzing A., Schurr R., Hock R., Wellmann P.:
Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
In: Solar Energy Materials and Solar Cells 94 (2010), p. 1875-1879
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2010.06.002
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2009

Groß M., Linse N., Maksimenko I., Wellmann P.:
Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices
In: Advanced Engineering Materials 11 (2009), p. 295-301
ISSN: 1438-1656
DOI: 10.1002/adem.200800292
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Hens P., Künecke U., Konias K., Hock R., Wellmann P.:
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
In: Materials Science Forum 615-617 (2009), p. 11-14
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.11
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Hens P., Künecke U., Wellmann P.:
Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
In: Materials Science Forum 600-603 (2009), p. 19-22
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.600-603.19
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Hens P., Syvaejaervi M., Oehlschläger F., Wellmann P., Yakimova R.:
P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
In: Materials Science Forum 615-617 (2009), p. 85-88
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.85
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Hölzing A., Schurr R., Schäfer H., Jaeger A., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
Sulfo-selenization of metallic thin films of Cu, In and Cu-In
In: Thin Solid Films 517 (2009), p. 2213-2217
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.10.089
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Oehlschläger F., Juillaguet S., Peyre H., Calmassel J., Wellmann P.:
Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
In: Materials Science Forum 615-617 (2009), p. 259-262
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.259
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Pons M., Nishizawa SI., Wellmann P., Blanquet E., Chaussende D., Dedulle J., Madar R.:
Silicon carbide growth: C/Si ratio evaluation and modeling
In: Materials Science Forum 600-603 (2009), p. 83-88
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.600-603.83
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Stockmeier M., Müller R., Sakwe A., Wellmann P., Magerl A.:
On the lattice parameters of silicon carbide
In: Journal of Applied Physics 105 (2009), Art.Nr.: 033511
ISSN: 0021-8979
DOI: 10.1063/1.3074301
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Stockmeier M., Sakwe A., Hens P., Wellmann P., Hock R., Magerl A.:
Thermal Expansion Coefficients of 6H Silicon Carbide
In: Materials Science Forum 600-603 (2009), p. 517-520
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.600-603.517
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Wellmann P., Feng Z., Shi G. (ed.):
Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen2009
ISBN: 978-3-00-027314-8
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Wellmann P., Konias K., Hens P., Hock R., Magerl A.:
In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
In: Materials Science Forum 615-617 (2009), p. 23-26
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.615-617.23
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2008

Groß M., Maksimenko I., Faber H., Linse N., Wellmann P.:
Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique
11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008) (Boston, Massachusetts, 06/01/08 - 06/05/08)
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Sakwe A., Stockmeier M., Hens P., Müller R., Queren D., Künecke U., Konias K., Hock R., Magerl A., Pons M., Winnacker A., Wellmann P.:
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
In: physica status solidi (b) 245 (2008), p. 1239-1256
ISSN: 0370-1972
DOI: 10.1002/pssb.200743520
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Steeds JW., Sullivan W., Furkert SA., Evans GA., Wellmann P.:
Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
In: Physical Review B 77 (2008), Art.Nr.: 195203
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.77.195203
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Wellmann P., Müller R., Sakwe A., Künecke U., Hens P., Stockmeier M., Konias K., Hock R., Magerl A., Pons M.:
Bulk growth of SiC
In: Materials Research Society Symposium - Proceedings 1069 (2008), p. 3-14
ISSN: 0272-9172
DOI: 10.1557/PROC-1069-D01-01
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Wellmann P., Sakwe A., Oehlschläger F., Hoffmann V., Zeimer U., Knauer A.:
Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
In: Journal of Crystal Growth 310 (2008), p. 955-958
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.11.064
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Welte A., Waldauf C., Brabec CJ., Wellmann P.:
Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
In: Thin Solid Films 516 (2008), p. 7256-7259
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.12.025
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2007

Bathelt R., Buchhauser D., Gärditz C., Paetzold R., Wellmann P.:
Light extraction from OLEDs for lighting applications through light scattering
In: Organic Electronics 8 (2007), p. 293-299
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2006.11.003
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Chaussende D., Wellmann P., Pons M.:
Status of SiC bulk growth processes
In: Journal of Physics D-Applied Physics 40 (2007), p. 6150-6158
ISSN: 0022-3727
DOI: 10.1088/0022-3727/40/20/S02
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Groß M., Winnacker A., Wellmann P.:
Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
In: Thin Solid Films 515 (2007), p. 8567-8572
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.03.136
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Jang YS., Sakwe A., Wellmann P., Juillaguet S., Peyre H., Camassel J., Steeds JW.:
Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies
In: Materials Science Forum 556-557 (2007), p. 13-16
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.13
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Konias K., Hock R., Stockmeier M., Wellmann P., Miller M., Ossege S., Magerl A.:
In-situ X-ray measurements of defect generation during PVT growth of SiC
In: Materials Science Forum 556-557 (2007), p. 267-270
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.267
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Sakwe A., Jang YS., Wellmann P.:
Defect etching of non-polar and semi-polar faces in SiC
In: Materials Science Forum 556-557 (2007), p. 243-246
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.243
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Sakwe A., Müller R., Wellmann P.:
Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]
In: Journal of Crystal Growth 299 (2007), p. 234-234
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.196
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Sakwe A., Wellmann P.:
Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals
In: Materials Science Forum 556-557 (2007), p. 263-266
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.263
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Wagner M., Mustafa E., Hahn S., Syväjärvi M., Yakimova R., Jang YS., Sakwe A., Wellmann P.:
Contactless electrical defect characterization and topography of a-plane grown epitaxial layers
In: Materials Science Forum 556-557 (2007), p. 327-330
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.327
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Wellmann P., Feng Z., Shi G. (ed.):
Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai
Shanghai: Tongji University Press, 2007
ISBN: 978-7-5608-3614-0
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Wellmann P., Hens P., Sakwe A., Queren D., Müller R., Durst K., Göken M.:
Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth
In: Materials Science Forum 556-557 (2007), p. 259-262
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.556-557.259
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Wellmann P., Karl U., Kleber S., Schmitt H.:
Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
In: Journal of Applied Physics 101 (2007)
ISSN: 0021-8979
DOI: 10.1063/1.2743090
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Wellmann P., Pons M.:
Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
In: Journal of Crystal Growth 303 (2007), p. 337-341
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.11.328
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2006

Chaussende D., Wellmann P., Ucar M., Pons M., Madar R.:
In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
In: Materials Science Forum 527-529 (2006), p. 63-66
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.63
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Contreras S., Zielinski M., Konczewicz L., Blanc C., Juillaguet S., Müller R., Künecke U., Wellmann P., Camassel J.:
Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
In: Materials Science Forum 527-529 (2006), p. 633-636
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.633
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Künecke U., Wellmann P.:
Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
In: European Physical Journal-Applied Physics 34 (2006), p. 209-213
ISSN: 1286-0042
DOI: 10.1051/epjap:2006055
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Müller R., Künecke U., Queren D., Sakwe A., Wellmann P.:
Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
In: Chemical Vapor Deposition 12 (2006), p. 557-561
ISSN: 0948-1907
DOI: 10.1002/cvde.200606474
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Müller R., Künecke U., Thuaire A., Mermoux M., Pons M., Wellmann P.:
Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering
In: Physica Status Solidi C: Conferences 3 (2006), p. 558-561
ISSN: 1610-1634
DOI: 10.1002/pssc.200564148
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Müller R., Künecke U., Weingärtner R., Maier M., Wellmann P.:
Anomalous charge carrier transport phenomena in highly aluminum doped SiC
In: Physica Status Solidi C: Conferences 3 (2006), p. 554-557
ISSN: 1610-1634
DOI: 10.1002/pssc.200564150
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Nishizawa SI., Wellmann P., Pons M.:
SiC epitaxial structure growth: evaluation and modeling
In: M. Syväjärvi and R. Yakimova (ed.): Wide Band Gap Materials and New Developments, India: Transworld Research Network, 2006, p. 69-89
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Pons M., Wellmann P., Nishizawa SI., Blanquet E., Dedulle J., Chaussende D.:
Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling
In: Materials Research Society Symposium - Proceedings 911 (2006), Art.Nr.: 0911-B04-02
ISSN: 0272-9172
DOI: 10.1557/PROC-0911-B04-02
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Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
Electronic Raman Studies of Shallow Donors in Silicon Carbide
In: Materials Science Forum 527-529 (2006), p. 579
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.579
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Sakwe A., Müller R., Masri P., Wellmann P.:
Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals
In: Physica Status Solidi C: Conferences 3 (2006), p. 562-566
ISSN: 1610-1634
DOI: 10.1002/pssc.200564152
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Sakwe A., Müller R., Queren D., Künecke U., Wellmann P.:
Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
In: Physica Status Solidi (C) Current Topics in Solid State Physics 3 (2006), p. 567-570
ISSN: 1862-6351
DOI: 10.1002/pssc.200564153
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Sakwe A., Müller R., Wellmann P.:
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC
In: Journal of Crystal Growth 289 (2006), p. 520-526
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.11.096
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Topic I., Sockel HG., Wellmann P., Göken M.:
The influence of microstructure on the magnetic properties of WC/Co hardmetals
In: Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 423 (2006), p. 306-312
ISSN: 0921-5093
DOI: 10.1016/j.msea.2006.02.018
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Wellmann P., Müller R., Pons M.:
Modeling and experimental verification of SiC M-PVT bulk crystal growth
In: Materials Science Forum 527-529 (2006), p. 75-78
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.75
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Wellmann P., Müller R., Queren D., Sakwe A., Pons M.:
Vapor growth of SiC bulk crystals and its challenge of doping
In: Surface & Coatings Technology 201 (2006), p. 4026-4031
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2006.08.033
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Wellmann P., Pons M.:
Silicon carbide CVD for electronic device applications
In: Chemical Vapor Deposition 12 (2006), p. 463-464
ISSN: 0948-1907
DOI: 10.1002/cvde.200690018
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Wellmann P., Pons M. (ed.):
Special Issue on Silicon Carbid CVD for Electronic Device Applications
Weinheim: Wiley-VCH, 2006
(Special issue of the Journal of Chemical Vapor Deposition, Vol. 12)
BibTeX: Download
Wellmann P., Queren D., Müller R., Sakwe A., Künecke U.:
Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
In: Materials Science Forum 527-529 (2006), p. 79-82
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.79
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Wellmann P., Shi G., Feng Z. (ed.):
Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai2006
ISBN: 978-3-00-019576-1
BibTeX: Download

2005

Müller R., Künecke U., Weingärtner R., Schmitt H., Desperrier P., Wellmann P.:
High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
In: Materials Science Forum 483 (2005), p. 31-34
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.31
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Pons M., Blanquet E., Dedulle J., Ucar M., Wellmann P., Danielsson Ö., Ferret P., Di Cioccio L., Baillet F., Chaussende D., Madar R.:
Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
In: Materials Science Forum 483 (2005), p. 3-8
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.3
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Pons M., Nishizawa SI., Wellmann P., Ucar M., Blanquet E., Dedulle J., Baillet F., Chaussende D., Bernard C., Madar R.:
Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics
In: ECS Transactions 2005-9 (2005), p. 1-12
ISSN: 1938-5862
URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844440869&origin=inward
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Sakwe A., Herro ZG., Wellmann P.:
Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
In: Materials Science Forum 483 (2005), p. 283-286
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.283
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Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
In: Materials Science Forum 483 (2005), p. 445-448
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.445
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Wellmann P.:
Additional pipework opens up transistor applications for SiC
In: Compound Semiconductor 11 (2005), p. 23-24
ISSN: 1096-598X
URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-18344397170&origin=inward
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Wellmann P., Desperrier P., Müller R., Straubinger T., Winnacker A., Baillet F., Blanquet E., Dedulle J., Pons M.:
SiC single crystal growth by a modified physical vapor transport technique
In: Journal of Crystal Growth 275 (2005), p. E555-E560
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.11.070
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Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
In situ visualization of SiC physical vapor transport crystal growth
In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.11.253
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Wellmann P., Müller R., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L.:
Micro-optical characterization study of highly p-type doped SiC : Al wafers
In: Materials Science Forum 483 (2005), p. 393-396
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.393
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Wellmann P., Straubinger T., Desperrier P., Müller R., Künecke U., Sakwe A., Schmitt H., Winnacker A., Blanquet E., Dedulle J., Pons M.:
Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
In: Materials Science Forum 483 (2005), p. 25-30
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.483-485.25
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Wellmann P., Straubinger T., Künecke U., Müller R., Sakwe A., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L., Camassel J.:
Optical mapping of aluminum doped p-type SiC wafers
In: physica status solidi (a) 202 (2005), p. 598-601
ISSN: 1862-6300
DOI: 10.1002/PSSA.200460436
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2004

Desperrier P., Müller R., Winnacker A., Wellmann P.:
Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
In: Materials Science Forum 457-460 (2004), p. 727-730
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.727
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Müller R., Desperrier P., Seitz C., Weißer M., Magerl A., Maier M., Winnacker A., Wellmann P.:
In-situ Er-doping of SiC bulk single crystals
In: Materials Science Forum 457-460 (2004), p. 723-726
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.723
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Weingärtner R., Wellmann P., Winnacker A.:
On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
In: Materials Science Forum 457-460 (2004), p. 645-648
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.645
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Weißer M., Seitz C., Wellmann P., Hock R., Magerl A.:
Structural defects in SiC crystals investigated by high energy x-ray diffraction
In: Materials Science Forum 457-460 (2004), p. 339-342
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.339
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Wellmann P., Albrecht A., Künecke U., Birkmann B., Müller G., Jurisch M.:
Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
In: European Physical Journal-Applied Physics 27 (2004), p. 357-361
ISSN: 1286-0042
DOI: 10.1051/epjap:2004041
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Wellmann P., Herro ZG., Sakwe A., Masri P., Bogdanov M., Karpov S., Kulik A., Ramm M., Makarov Y.:
Analysis of graphitization during physical vapor transport growth of silicon carbide
In: Materials Science Forum 457-460 (2004), p. 55-58
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.457-460.55
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2003

Bickermann M., Weingärtner R., Herro ZG., Hofmann HD., Künecke U., Wellmann P., Winnacker A.:
Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
In: Materials Science Forum 433-436 (2003), p. 337-340
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.337
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Herro ZG., Wellmann P., Püsche R., Hundhausen M., Ley L., Maier M., Masri P., Winnacker A.:
Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
In: Journal of Crystal Growth 258 (2003), p. 261-267
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(03)01538-0
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Weingärtner R., Albrecht A., Wellmann P., Winnacker A.:
Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
In: Materials Science Forum 433-436 (2003), p. 341-344
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.341
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Weingärtner R., Bickermann M., Herro ZG., Künecke U., Sakwe A., Wellmann P., Winnacker A.:
Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
In: Materials Science Forum 433-436 (2003), p. 333-336
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.333
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Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
In: Materials Science Forum 433-436 (2003), p. 9-12
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.433-436.9
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Wellmann P., Weingärtner R.:
Determination of doping levels and their distribution in SiC by optical techniques
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 102 (2003), p. 262-268
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(02)00707-9
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2002

Birkmann B., Weingärtner R., Wellmann P., Wiedemann B., Müller G.:
Analysis of silicon incorporation into VGF-grown GaAs
In: Journal of Crystal Growth 237 (2002), p. 345-349
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(01)01935-2
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Straubinger T., Bickermann M., Rasp M., Weingärtner R., Wellmann P., Winnacker A.:
Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
In: Materials Science Forum 389-393 (2002), p. 131-134
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.389-393.131
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Straubinger T., Bickermann M., Weingärtner R., Wellmann P., Winnacker A.:
Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
In: Journal of Crystal Growth 240 (2002), p. 117-123
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(02)00917-X
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Weingärtner R., Wellmann P., Bickermann M., Hofmann HD., Straubinger T., Winnacker A.:
Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
In: Applied Physics Letters 80 (2002), p. 70-72
ISSN: 0003-6951
DOI: 10.1063/1.1430262
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Wellmann P., Herro ZG., Straubinger T., Winnacker A.:
'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
In: Materials Science Forum 389-393 (2002), p. 91-94
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.389-393.91
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Wellmann P., Weingärtner R., Bickermann M., Straubinger T., Winnacker A.:
Optical quantitative determination of doping levels and their distribution in SiC
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(01)00976-X
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2001

Bickermann M., Hofmann HD., Rasp M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
Study of boron incorporation during PVT growth of p-type SiC crystals
In: Materials Science Forum 353-356 (2001), p. 49-52
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.49
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Bickermann M., Hofmann HD., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
On the preparation of semi-insulating SiC bulk crystals by the PVT technique
In: Applied Surface Science 184 (2001), p. 84-89
ISSN: 0169-4332
DOI: 10.1016/S0169-4332(01)00481-0
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Hofmann HD., Bickermann M., Ebling D., Epelbaum B., Kadinski L., Selder M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
SiC crystal growth from the vapor and liquid phase
In: Materials Research Society Symposium - Proceedings 640 (2001), Art.Nr.: H1.1
ISSN: 0272-9172
DOI: 10.1557/PROC-640-H1.1
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Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P., Hofmann HD.:
Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
In: Materials Science Forum 353-356 (2001), p. 65-68
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.65
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Straubinger T., Bickermann M., Hofmann HD., Weingärtner R., Wellmann P., Winnacker A.:
Stability criteria for 4H-SiC bulk growth
In: Materials Science Forum 353-356 (2001), p. 25-28
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.25
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Straubinger T., Wellmann P., Winnacker A.:
Investigation of a PVT SiC-growth set-up modified by an additional gas flow
In: Materials Science Forum 353-356 (2001), p. 33-36
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.33
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Weingärtner R., Bickermann M., Bushevoy S., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(00)00599-7
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Weingärtner R., Bickermann M., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
In: Materials Science Forum 353-356 (2001), p. 397-400
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.397
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Wellmann P.:
Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg
Aachen: Shaker Verlag, 2001
(Berichte aus der Halbleitertechnik)
ISBN: 3-8265-9075-9
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Wellmann P., Bushevoy S., Weingärtner R.:
Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 352-356
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(00)00598-5
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Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
In: Materials Science Forum 353-356 (2001), p. 11-14
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.353-356.11
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Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
Impact of source material on silicon carbide vapor transport growth process
In: Journal of Crystal Growth 225 (2001), p. 312-316
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(01)00881-8
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2000

Selder M., Kadinski L., Durst F., Straubinger T., Hofmann HD., Wellmann P.:
Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
In: Materials Science Forum 338-342 (2000), p. 31-34
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.338-342.31
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Selder M., Kadinski L., Makarov Y., Durst F., Wellmann P., Straubinger T., Hofmann HD., Karpov S., Ramm M.:
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
In: Journal of Crystal Growth 211 (2000), p. 333-338
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(99)00853-2
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Straubinger T., Bickermann M., Grau M., Hofmann HD., Kadinski L., Müller G., Selder M., Wellmann P., Winnacker A.:
Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
In: Materials Science Forum 338-342 (2000), p. 39-42
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.338-342.39
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Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
In: Materials Science Forum 338-342 (2000), p. 71-74
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.338-342.71
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Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
In: Journal of Crystal Growth 216 (2000), p. 263-272
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(00)00372-9
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Winnacker A., Hofmann HD., Wellmann P.:
Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics
Third Vietnam-German Workshop on Physics and Engineering (Ho Chi Minh City)
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1999

Hofmann HD., Schmitt E., Bickermann M., Kölbl M., Wellmann P., Winnacker A.:
Analysis on defect generation during the SiC bulk growth process
In: Materials Science and Engineering B-Advanced Functional Solid-State Materials B61-62 (1999), p. 48-53
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(98)00443-7
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Wellmann P., Bickermann M., Grau M., Hofmann HD., Straubinger T., Winnacker A.:
Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging
In: Materials Research Society Symposium - Proceedings 572 (1999), p. 259-264
ISSN: 0272-9172
DOI: 10.1557/PROC-572-259
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Wellmann P., Garcia J., Feng JL., Petroff P.:
Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs
ICPS24th conference (Helsinki, 08/14/99 - 08/20/99)
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1998

Garcia J., Mankad T., Holtz O., Wellmann P., Petroff P.:
Electronic states tuning of InAs self-assembled quantum dots
In: Applied Physics Letters 72 (1998), p. 3172-3174
ISSN: 0003-6951
DOI: 10.1063/1.121583
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Schmidt K., Kunze U., Medeiros-Ribeiro G., Garcia J., Wellmann P., Petroff P.:
Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots
In: Physica E-Low-Dimensional Systems & Nanostructures 2 (1998), p. 627-631
ISSN: 1386-9477
DOI: 10.1016/S1386-9477(98)00128-3
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Wellmann P., Garcia J., Feng JL., Petroff P.:
Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure
In: Applied Physics Letters 73 (1998), p. 3291-3293
ISSN: 0003-6951
DOI: 10.1063/1.122748
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Wellmann P., Garcia J., Feng JL., Petroff P.:
Giant magnetoresistance in a low-temperature grown GaAs with imbedded MnAs nanomagnets
Physics of Microstructured Semiconductors
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Wellmann P., Schoenfeld W., Garcia J., Petroff P.:
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
In: Journal of Electronic Materials 27 (1998), p. 1030-1033
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0158-4
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1997

Van Esch A., Van Bockstal L., De Boeck J., Verbanck G., Van Steenbergen A., Wellmann P., Grietens B., Bogaerts R., Herlach F., Borghs G.:
Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
In: Physical Review B 56 (1997), p. 13103-13112
ISSN: 1098-0121
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Wellmann P., Feng JL., Garcia J., Petroff P.:
Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation
In: Materials Research Society Symposium - Proceedings 475 (1997), p. 49-54
ISSN: 0272-9172
DOI: 10.1557/PROC-475-49
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Wellmann P., Garcia J., Feng JL., Petroff P.:
Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs
In: Applied Physics Letters 71 (1997), p. 2532-2534
ISSN: 0003-6951
DOI: 10.1063/1.120109
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1996

Wellmann P., Winnacker A., Pensl G.:
On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP
In: Materials Research Society Symposium - Proceedings 422 (1996), p. 255-266
ISSN: 0272-9172
DOI: 10.1557/PROC-422-255
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1995

Burchard A., Deicher M., Forkel-Wirth D., Freidinger J., Kerle T., Magerle R., Pfeiffer W., Prost W., Wellmann P., Winnacker A.:
Acceptor-hydrogen interaction in ternary III-V semiconductors
In: Materials Science Forum 196-201 (1995), p. 987-991
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.196-201.987
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1994

Waldmüller S., Lang M., Wellmann P., Winnacker A.:
Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy
IEEE, 6th International Conference on InP and Related Materials (Santa Barbara, CA, 03/27/94 - 03/31/94)
DOI: 10.1109/ICIPRM.1994.328209
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