NGSE5, Day 3: Hot Topics Session 3

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Development of PV by HZB

The first contribution in this session is from Maria Antonietta Loi, Professor of Photophysics and Optoelectronics at Groningen University with a talk on “Sn-based perovskites from hot electrons to device performances”. Hot electrons are an intriguing idea for exceeding the Shockley-Queisser limit. In her work she has been able to identify hot-carriers in Sn-based PSKs and finds that the lifetime is extremely long.

Hot Carrier Lifetime by Maria Loi
Hot Carrier Lifetime by Maria Loi

Prof. Jingbi You from the the Institute of semiconductors of the chinese academy of sciences. Efficient perovskite solar cells with various bandgaps. In his work Prof. You has found that organic salts have big impact in preventing recombination at the surface of the PSK-layer. This has helped to push the Efficiencies of single junction narrow bandgab PSKs beyond 23%. In wide bandgap PSKs even more than 25% have been achieved. For inorganic PSKs >20% have been achieved.

Efficiency Records achieved with proper surface passivation.

Steve Albrecht, head of a young investigator group at the Helmholtz Center Berlin reported on Perovskite-based tandem solar cells: towards 30% efficiency. The breakeven point of Perovskites with Si has been reached. PSK cells are more efficient than the best Si-cells. Prof. Albrecht reports on the work towards the 29.1% record Si/PSK Tandem cells. Also in this work passivation of the PSK Surface played a large role. Here self assembled Monolayers were used that were not further specified, but will be published on Dec. 11th!

Steve Albrecht on the effect of a novel SAM
Steve Albrecht on the effect of a novel SAM