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Crystal Growth - Lab Work 2 Wafer Characterization

Lecturers

Details

Time and place:

  • Thu 8:00-17:00, Room 3.71

Prerequisites / Organisational information

Participants of the Teaching Module "Crystal Growth 2"

Content

Characterization of SiC semiconductor wafers

Recommended Literature

Wellmann, P., & Weingärtner, R. (2003). Determination of doping levels and their distribution in SiC by optical techniques. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 102(1-3), 262-268. https://dx.doi.org/10.1016/S0921-5107(02)00707-9