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  1. Home
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  3. Prof. Dr.-Ing. Peter Wellmann
  4. Publications

Publications

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Publications

Prof. Dr.-Ing. Peter Wellmann - Publications

Prof. Dr.-Ing. Peter Wellmann

Peter Wellmann
Projektleitung Forschungsgruppe CGL (Crystal Growth Lab)

Department of Materials Science and Engineering
Chair of Materials for Electronics and Energy Technology

Room: Room 392
Martensstr. 7
91058 Erlangen
  • Phone number: +49 9131 85-27635
  • Fax number: +49 9131 85-28495
  • Email: peter.wellmann@fau.de
  • Website: http://crystals.techfak.fau.de/

Office hours

Room 3.92, Terminabsprache per Email (peter.wellmann@fau.de)

Publications

2025

  • Ihle J., Wellmann P.:
    Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth
    In: Crystal Research and Technology 60 (2025), Article No.: 2400080
    ISSN: 0232-1300
    DOI: 10.1002/crat.202400080
    BibTeX: Download

2024

  • Chaussende D., Tabouret V., Crisci A., Morais M., Coindeau S., Berthomé G., Kollmuß M., Wellmann P., Jomard F., Pinault-Thaury MA., Lu Y., Shi X., Ou H.:
    Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications
    In: Materials Science in Semiconductor Processing 182 (2024), Article No.: 108673
    ISSN: 1369-8001
    DOI: 10.1016/j.mssp.2024.108673
    BibTeX: Download
  • Freund T., Jamshaid S., Monavvar M., Wellmann P.:
    Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches
    In: Crystals 14 (2024), Article No.: 267
    ISSN: 2073-4352
    DOI: 10.3390/cryst14030267
    BibTeX: Download
  • Jamshaid S., Cicconi MR., Heiß W., Webber KG., Wellmann P.:
    Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates
    In: Advanced Engineering Materials (2024)
    ISSN: 1438-1656
    DOI: 10.1002/adem.202302161
    BibTeX: Download
  • Nguyen BD., Steiner J., Wellmann P., Sandfeld S.:
    Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer
    In: MRS Communications 14 (2024), p. 612-627
    ISSN: 2159-6859
    DOI: 10.1557/s43579-024-00563-2
    BibTeX: Download
  • Schultheiß J., Ihle J., Nanot SU., Bonanomi S., Munoz DC., Hammer R., Wellmann P.:
    Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
    DOI: 10.4028/p-z8fjMB
    BibTeX: Download

2023

  • Ihle J., Wellmann P.:
    In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
    DOI: 10.4028/p-568g51
    BibTeX: Download
  • Kollmuß M., La Via F., Wellmann P.:
    Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC
    In: Crystal Research and Technology (2023)
    ISSN: 0232-1300
    DOI: 10.1002/crat.202300034
    BibTeX: Download
  • Kollmuß M., Shi X., Ou H., Wellmann P.:
    Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
    DOI: 10.4028/p-58x5tx
    BibTeX: Download
  • Nguyen BD., Roder M., Danilewsky A., Steiner J., Wellmann P., Sandfeld S.:
    Automated analysis of X-ray topography of 4H-SiC wafers: Image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations
    In: Journal of Materials Research (2023)
    ISSN: 0884-2914
    DOI: 10.1557/s43578-022-00880-z
    BibTeX: Download
  • Ou H., Shi X., Lu Y., Kollmuß M., Steiner J., Tabouret V., Syväjärvi M., Wellmann P., Chaussende D.:
    Novel Photonic Applications of Silicon Carbide
    In: Materials 16 (2023), Article No.: 1014
    ISSN: 1996-1944
    DOI: 10.3390/ma16031014
    BibTeX: Download
  • Roder M., Steiner J., Wellmann P., Kabukcuoglu M., Hamann E., Haaga S., Hänschke D., Danilewsky A.:
    Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties
    In: Journal of Applied Crystallography 56 (2023), p. 776-786
    ISSN: 0021-8898
    DOI: 10.1107/S1600576723003291
    BibTeX: Download
  • Steiner J., Nguyen BD., Sandfeld S., Wellmann P.:
    Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
    DOI: 10.4028/p-eu98j0
    BibTeX: Download
  • Steiner J., Schultheiß J., Wang S., Wellmann P.:
    Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C
    In: Crystals 13 (2023), Article No.: 1590
    ISSN: 2073-4352
    DOI: 10.3390/cryst13111590
    BibTeX: Download
  • Strüber S., Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
    Investigation of the Nucleation Process During the Initial Stage of PVT Growth of 4H-SiC
    In: Solid State Phenomena, Trans Tech Publications Ltd, 2023, p. 51-56
    DOI: 10.4028/p-x54xp1
    BibTeX: Download
  • Wellmann P., Steiner J., Strüber S., Arzig M., Salamon M., Uhlmann N., Nguyen BD., Sandfeld S.:
    The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology
    In: Diamond and Related Materials 136 (2023), Article No.: 109895
    ISSN: 0925-9635
    DOI: 10.1016/j.diamond.2023.109895
    BibTeX: Download

2022

  • Arzig M., Künecke U., Salamon M., Uhlmann N., Wellmann P.:
    Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
    13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
    In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
    DOI: 10.4028/p-f58944
    BibTeX: Download
  • Calogero G., Deretzis I., Fisicaro G., Kollmuß M., La Via F., Lombardo SF., Schöler M., Wellmann P., La Magna A.:
    Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
    In: Crystals 12 (2022)
    ISSN: 2073-4352
    DOI: 10.3390/cryst12121701
    BibTeX: Download
  • Freund T., Cicconi MR., Wellmann P.:
    Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites
    In: physica status solidi (b) (2022)
    ISSN: 0370-1972
    DOI: 10.1002/pssb.202200094
    BibTeX: Download
  • Hayashi K., Lederer M., Fukumoto Y., Goto M., Yamamoto Y., Happo N., Harada M., Inamura Y., Oikawa K., Ohoyama K., Wellmann P.:
    Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography
    In: Applied Physics Letters 120 (2022), Article No.: 132101
    ISSN: 0003-6951
    DOI: 10.1063/5.0080895
    BibTeX: Download
  • Ihle J., Wellmann P.:
    In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry
    13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
    In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
    DOI: 10.4028/p-gt22u6
    BibTeX: Download
  • Kollmuß M., Köhler J., Ou H., Fan W., Chaussende D., Hock R., Wellmann P.:
    Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications
    13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
    In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
    DOI: 10.4028/p-nshb40
    BibTeX: Download
  • Kollmuß M., Mauceri M., Roder M., La Via F., Wellmann P.:
    In situ bow reduction during sublimation growth of cubic silicon carbide
    In: Reviews on Advanced Materials Science 61 (2022), p. 829-837
    ISSN: 1606-5131
    DOI: 10.1515/rams-2022-0278
    BibTeX: Download
  • Kollmuß M., Schöler M., Anzalone R., Mauceri M., La Via F., Wellmann P.:
    Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
    13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
    In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
    DOI: 10.4028/p-6ef373
    BibTeX: Download
  • Schimmel S., Salamon M., Tomida D., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Ishiguro T., Honda Y., Chichibu SF., Amano H., Schlücker E., Wellmann P.:
    In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth
    7th European Conference on Crystal Growth (Paris, July 25, 2022 - July 27, 2022)
    BibTeX: Download
  • Steiner J., Nguyen BD., Roder M., Danilewsky A., Sandfeld S., Wellmann P.:
    Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
    13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
    In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
    DOI: 10.4028/p-y8n42h
    BibTeX: Download
  • Steiner J., Wellmann P.:
    Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
    In: Materials 15 (2022)
    ISSN: 1996-1944
    DOI: 10.3390/ma15051897
    BibTeX: Download
  • Wellmann P., Arzig M., Ihle J., Kollmuß M., Steiner J., Mauceri M., Crippa D., Lavia F., Salamon ., Uhlmann N., Roder M., Danilewsky A., Nguyen BD., Sandfeld S.:
    Review of Sublimation Growth of SiC Bulk Crystals
    13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Virtual, Online, October 24, 2021 - October 28, 2021)
    In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
    DOI: 10.4028/p-05sz31
    BibTeX: Download

2021

  • Arzig M., Künecke U., Salamon M., Uhlmann N., Wellmann P.:
    Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals
    In: Journal of Crystal Growth 576 (2021), Article No.: 126361
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2021.126361
    BibTeX: Download
  • Künecke U., Schuster M., Wellmann P.:
    Analysis of compositional gradients in Cu(In,Ga)(S,Se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energies
    In: Materials 14 (2021), Article No.: 2861
    ISSN: 1996-1944
    DOI: 10.3390/ma14112861
    URL: https://www.mdpi.com/1996-1944/14/11/2861
    BibTeX: Download
  • Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H., Wellmann P.:
    Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation
    Seminar of the Young Crystal Growers (DGKK) (Berlin, October 5, 2022 - October 6, 2021)
    BibTeX: Download
  • Schimmel S., Wellmann P.:
    In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technology
    In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 171-190 (Springer Series in Materials Science, Vol.304)
    ISBN: 978-3-030-56305-9

    DOI: 10.1007/978-3-030-56305-9_10
    BibTeX: Download
  • Schlücker E., Hertweck B., Schimmel S., Wellmann P.:
    Special Equipment for Ammonothermal Processes
    In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 317-328 (Springer Series in Materials Science, Vol.304)
    ISBN: 978-3-030-56305-9

    DOI: 10.1007/978-3-030-56305-9_17
    BibTeX: Download
  • Schöler M., La Via F., Mauceri M., Wellmann P.:
    Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates
    In: Crystal Growth and Design (2021)
    ISSN: 1528-7483
    DOI: 10.1021/acs.cgd.1c00343
    BibTeX: Download
  • Via FL., Zimbone M., Bongiorno C., La Magna A., Fisicaro G., Deretzis I., Scuderi V., Calabretta C., Giannazzo F., Zielinski M., Anzalone R., Mauceri M., Crippa D., Scalise E., Marzegalli A., Sarikov A., Miglio L., Jokubavicius V., Syvajarvi M., Yakimova R., Schuh P., Schöler M., Kollmuß M., Wellmann P.:
    New approaches and understandings in the growth of cubic silicon carbide
    In: Materials 14 (2021), Article No.: 5348
    ISSN: 1996-1944
    DOI: 10.3390/ma14185348
    BibTeX: Download
  • Wellmann P.:
    The search for new materials and the role of novel processing routes
    In: Discover Materials 1 (2021), Article No.: 14
    ISSN: 2730-7727
    DOI: 10.1007/s43939-021-00014-y
    BibTeX: Download
  • Wellmann P., Ohtani N., Rupp R.:
    Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications
    wiley, 2021
    ISBN: 9783527824724
    DOI: 10.1002/9783527824724
    BibTeX: Download
  • Wellmann P., Schöler M., Schuh P., Jennings M., Li F., Nipoti R., Severino A., Anzalone R., Roccaforte F., Zimbone M., Via FL.:
    Status of 3C-SiC Growth and Device Technology
    wiley, 2021
    ISBN: 9783527824724
    DOI: 10.1002/9783527824724.ch5
    BibTeX: Download

2020

  • Arzig M., Salamon M., Hsiao TC., Uhlmann N., Wellmann P.:
    Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
    In: Journal of Crystal Growth 532 (2020), Article No.: 125436
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2019.125436
    BibTeX: Download
  • Danilewsky A., Wellmann P., Miller W.:
    The 50th Anniversary of the German Association for Crystal Growth, DGKK
    In: Crystal Research and Technology 55 (2020), Article No.: 2000009
    ISSN: 0232-1300
    DOI: 10.1002/crat.202000009
    BibTeX: Download
  • Nguyen BD., Rausch A., Steiner J., Wellmann P., Sandfeld S.:
    On the importance of dislocation flow in continuum plasticity models for semiconductor materials
    In: Journal of Crystal Growth 532 (2020), Article No.: 125414
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2019.125414
    BibTeX: Download
  • Schimmel S., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Schlücker E., Wellmann P.:
    Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperatures
    In: Crystals 10 (2020), p. 1-18
    ISSN: 2073-4352
    DOI: 10.3390/cryst10090723
    BibTeX: Download
  • Schöler M., Lederer M., Schuh P., Wellmann P.:
    Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
    In: physica status solidi (b) 257 (2020), Article No.: 1900286
    ISSN: 0370-1972
    DOI: 10.1002/pssb.201900286
    BibTeX: Download
  • Steiner J., Arzig M., Denisov A., Wellmann P.:
    Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
    In: Crystal Research and Technology 55 (2020), Article No.: 1900121
    ISSN: 0232-1300
    DOI: 10.1002/crat.201900121
    BibTeX: Download
  • Sytnyk M., Yousefi-Amin AA., Freund T., Prihoda A., Götz K., Unruh T., Harreiß C., Will J., Spiecker E., Levchuk J., Osvet A., Brabec C., Künecke U., Wellmann P., Volobuev VV., Korczak J., Szczerbakow A., Story T., Simbrunner C., Springholz G., Wechsler D., Lytken O., Lotter S., Kampmann F., Maultzsch J., Singh K., Voznyy O., Heiß W.:
    Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates
    In: Advanced Functional Materials 30 (2020), Article No.: ARTN 2004612
    ISSN: 1616-301X
    DOI: 10.1002/adfm.202004612
    BibTeX: Download
  • Weber A., Lechner R., Grünsteidl S., Borowski P., Schubbert C., Dalibor T., Heise SJ., Ohland J., Savchenko I., Ahmed H., Hirwa H., Parisi J., Klenk R., Reyes-Figueroa P., Farias Basulto G., Aghaei M., Ulbrich C., Waack E., Hock R., Dallmann J., Künecke U., Schuster M., Wellmann P.:
    Investigating and Improving Performance Ratio of Cu(In,Ga)(S,Se)2 Photovoltaic Devices
    EU PVSEC (Marseille, September 7, 2020 - September 11, 2020)
    BibTeX: Download
  • Wellmann P.:
    Perfect materials as the base for technical innovation
    In: The Innovation Platform 4 (2020), p. 82-85
    URL: https://www.innovationnewsnetwork.com/the-innovation-platform/
    BibTeX: Download
  • Wellmann P., Schuh P., Kollmuß M., Schöler M., Steiner J., Zielinski M., Mauceri M., La Via F.:
    Prospects of bulk growth of 3C-SiC using sublimation growth
    In: Materials Science Forum 1004 MSF (2020), p. 113-119
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.1004.113
    BibTeX: Download

2019

  • Arzig M., Salamon M., Uhlmann N., Wellmann P.:
    Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization
    In: Advanced Engineering Materials (2019), Article No.: 1900778
    ISSN: 1438-1656
    DOI: 10.1002/adem.201900778
    BibTeX: Download
  • Arzig M., Salamon M., Uhlmann N., Wellmann P.:
    Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup
    In: Materials Science Forum 963 (2019), p. 14-17
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.963.14
    BibTeX: Download
  • Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
    Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals
    In: Materials 12 (2019), Article No.: 2591
    ISSN: 1996-1944
    DOI: 10.3390/ma12162591
    BibTeX: Download
  • Ellefsen OM., Arzig M., Steiner J., Wellmann P., Runde P.:
    Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
    In: Materials 12 (2019), Article No.: 3272
    ISSN: 1996-1944
    DOI: 10.3390/ma12193272
    BibTeX: Download
  • Hassanien AE., Abdelhaleem S., Ahmad R., Schuster M., Moustafa SH., Distaso M., Peukert W., Wellmann P.:
    Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique
    In: Journal of Nanoelectronics and Optoelectronics 14 (2019), p. 1394-1400
    ISSN: 1555-130X
    DOI: 10.1166/jno.2019.2633
    BibTeX: Download
  • Lin L., Ou Y., Jokubavicius V., Syväjärvi M., Liang M., Liu Z., Yi X., Schuh P., Wellmann P., Herstrøm B., Jensen F., Ou H.:
    An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
    In: Materials Science in Semiconductor Processing 91 (2019), p. 9-12
    ISSN: 1369-8001
    DOI: 10.1016/j.mssp.2018.10.028
    BibTeX: Download
  • Salamon M., Arzig M., Uhlmann N., Wellmann P.:
    Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
    In: Materials Science Forum 963 (2019), p. 5-9
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.963.5
    BibTeX: Download
  • Salamon M., Arzig M., Wellmann P., Uhlmann N.:
    Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystal
    In: Materials 12 (2019), Article No.: 3652
    ISSN: 1996-1944
    DOI: 10.3390/ma12223652
    BibTeX: Download
  • Salamon M., Arzig M., Wellmann P., Uhlmann N.:
    Three-dimensional in-situ growth surveillance of bulky SiC crystals
    International Symposium on Digital Industrial Radiology and Computed Tomography – DIR2019 (Fürth, July 2, 2019 - July 4, 2019)
    In: German Society for Non-Destructive Testing (DGZfP) (ed.): Proceedings of the DIR 2019 2019
    BibTeX: Download
  • Schuh P., Künecke U., Litrico G., Mauceri M., La Via F., Monnoye S., Zielinski M., Wellmann P.:
    Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
    In: Materials Science Forum 963 (2019), p. 149-152
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.963.149
    BibTeX: Download
  • Schuh P., La Via F., Mauceri M., Zielinski M., Wellmann P.:
    Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth
    In: Materials 12 (2019), Article No.: 2179
    ISSN: 1996-1944
    DOI: 10.3390/ma12132179
    BibTeX: Download
  • Schuh P., Steiner J., La Via F., Mauceri M., Zielinski M., Wellmann P.:
    Limitations during Vapor Phase Growth of Bulk (100)
    3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

    In: Materials 12 (2019), Article No.: 2353
    ISSN: 1996-1944
    DOI: 10.3390/ma12152353
    URL: https://www.mdpi.com/1996-1944/12/15/2353
    BibTeX: Download
  • Schuster M., Stapf D., Osterrieder T., Barthel V., Wellmann P.:
    Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure
    In: Coatings 9 (2019), p. 1-16
    ISSN: 2079-6412
    DOI: 10.3390/coatings9080484
    URL: https://www.mdpi.com/2079-6412/9/8/484
    BibTeX: Download
  • Schöler M., Brecht C., Wellmann P.:
    Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide
    In: Materials 12 (2019), Article No.: 2487
    ISSN: 1996-1944
    DOI: 10.3390/ma12152487
    BibTeX: Download
  • Schöler M., Lederer M., Schuh P., Wellmann P.:
    Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
    (2019), Article No.: arXiv:1906.07433
    URL: https://arxiv.org/abs/1906.07433
    BibTeX: Download
    (online publication)
  • Schöler M., Lederer M., Wellmann P.:
    Deep electronic levels in n-type and p-type 3C-SiC
    In: Materials Science Forum 963 (2019), p. 297-300
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.963.297
    BibTeX: Download
  • Schöler M., Schuh P., Steiner J., Wellmann P.:
    Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
    In: Materials Science Forum 963 (2019), p. 157-160
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.963.157
    BibTeX: Download
  • Steiner J., Arzig M., Hsiao TC., Wellmann P.:
    Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules
    In: Materials Science Forum 963 (2019), p. 42-45
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.963.42
    BibTeX: Download
  • Steiner J., Roder M., Nguyen BD., Sandfeld S., Danilewsky A., Wellmann P.:
    Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC
    In: Materials 12 (2019), Article No.: 2207
    ISSN: 1996-1944
    DOI: 10.3390/ma12132207
    BibTeX: Download
  • Tarekegne AT., Norrman K., Jokubavicius V., Syväjärvi M., Schuh P., Wellmann P., Ou H.:
    Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC
    In: Applied Physics B-Lasers and Optics 125 (2019), Article No.: 172
    ISSN: 0946-2171
    DOI: 10.1007/s00340-019-7279-8
    BibTeX: Download
  • Wellmann P., La Via F., Jennings M. (ed.):
    Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications"
    2019
    (Materials, Vol. Energy Materials)
    BibTeX: Download

2018

  • Abdelhaleem S., Hassanien A., Ahmad R., Schuster M., Ashour A., Distaso M., Peukert W., Wellmann P.:
    Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique
    In: Journal of Electronic Materials (2018)
    ISSN: 0361-5235
    DOI: 10.1007/s11664-018-6636-4
    BibTeX: Download
  • Arzig M., Hsiao T., Wellmann P.:
    Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules
    In: Advanced Materials Proceedings 3 (2018), p. 540-543
    ISSN: 2002-4428
    DOI: 10.5185/amp.2018/1414
    BibTeX: Download
  • Arzig M., Salamon M., Uhlmann N., Johansen BA., Wellmann P.:
    Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
    In: Materials Science Forum 924 (2018), p. 245-248
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.924.245
    BibTeX: Download
  • Fahlbusch L., Wellmann P.:
    Solution Growth of Silicon Carbide Using the Vertical Bridgman Method
    In: Crystal Research and Technology (2018), Article No.: 1800019
    ISSN: 0232-1300
    DOI: 10.1002/crat.201800019
    BibTeX: Download
  • La Via F., Severino A., Anzalone R., Bongiorno C., Litrico G., Mauceri M., Schöler M., Schuh P., Wellmann P.:
    From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
    In: Materials Science in Semiconductor Processing 78 (2018), p. 57-68
    ISSN: 1369-8001
    DOI: 10.1016/j.mssp.2017.12.012
    BibTeX: Download
  • Schimmel S., Duchstein P., Steigerwald T., Kimmel AC., Schlücker E., Zahn D., Niewa R., Wellmann P.:
    In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
    In: Journal of Crystal Growth 498 (2018), p. 214-223
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2018.06.024
    BibTeX: Download
  • Schuster M., Sisterhenn P., Graf L., Wellmann P.:
    Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques
    In: International Journal of Nanoparticle Research 2 (2018)
    DOI: 10.28933/ijnr-2017-12-1501
    URL: http://escipub.com/ijnr-2017-12-1501/
    BibTeX: Download
  • Wellmann P.:
    Review of SiC crystal growth technology
    In: Semiconductor Science and Technology 33 (2018), p. 1-21
    ISSN: 0268-1242
    DOI: 10.1088/1361-6641/aad831
    BibTeX: Download

2017

  • Häusler J., Schimmel S., Wellmann P., Schnick W.:
    Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
    In: Chemistry - A European Journal 23 (2017), p. 12275-12282
    ISSN: 0947-6539
    DOI: 10.1002/chem.201701081
    BibTeX: Download
  • Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
    Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
    In: Journal of Crystal Growth 479 (2017), p. 59-66
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2017.09.027
    BibTeX: Download
  • Schimmel S., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
    Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides
    5th German-Swiss Conference on Crystal Growth (Freiburg, March 8, 2017 - March 10, 2017)
    BibTeX: Download
  • Schuh P., Arzig M., Litrico G., La Via F., Mauceri M., Wellmann P.:
    Growing bulk-like 3C-SiC from seeding material produced by CVD
    In: physica status solidi (a) (2017), Article No.: 1600429
    ISSN: 1862-6300
    DOI: 10.1002/pssa.201600429
    BibTeX: Download
  • Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
    3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers
    In: Materials Science Forum 897 (2017), p. 15-18
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.897.15
    BibTeX: Download
  • Schuh P., Schöler M., Wilhelm M., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
    Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
    In: Journal of Crystal Growth 478 (2017), p. 159-162
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2017.09.002
    BibTeX: Download
  • Schuster M., Groß S., Roider F., Maksimenko I., Wellmann P.:
    Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires
    In: International Journal of Nanoparticles and Nanotechnology 3 (2017)
    Open Access: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
    URL: http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
    BibTeX: Download
  • Schöler M., Schuh P., Litrico G., La Via F., Mauceri M., Wellmann P.:
    Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers
    In: Advanced Materials Proceedings 2 (2017), p. 774-778
    ISSN: 2002-4428
    DOI: 10.5185/amp.2017/419
    BibTeX: Download
  • Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
    Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates
    In: Journal of Materials Science: Materials in Electronics (2017), p. 1-9
    ISSN: 0957-4522
    DOI: 10.1007/s10854-017-6467-8
    BibTeX: Download
  • Wei Y., Künecke U., Jokubavicius V., Syväjärvi M., Wellmann P., Ou H.:
    Low Temperature Photoluminescence of 6H fluorescent SiC
    E-MRS Spring Meeting 2017 (Strasbourg, May 22, 2017 - May 26, 2017)
    BibTeX: Download
  • Wei Y., Künecke U., Wellmann P., Ou H.:
    Detection of effective recombination centers in fluorescent SiC using thermally
    stimulated luminescence

    5th international workshop on LED and Solar Applications (Lyngby, September 13, 2017 - September 14, 2017)
    BibTeX: Download
  • Wei Y., Künecke U., Wellmann P., Ou H.:
    Thermally Stimulated Luminescence in 6H Fluorescent SiC
    International Conference on Silicon Carbide and Related Materials (Washington, DC, September 17, 2017 - September 22, 2017)
    BibTeX: Download
  • Wellmann P.:
    Materials-Related Solutions for Industry
    In: Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (ed.): Materials Innovation for the global circular economy and sustainable society, 2017 (WORLD MATERIALS SUMMITS, Vol.6)
    BibTeX: Download
  • Wellmann P.:
    Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond
    In: Zeitschrift für Anorganische und Allgemeine Chemie 643 (2017), p. 1312-1322
    ISSN: 0044-2313
    DOI: 10.1002/zaac.201700270
    BibTeX: Download
  • Wilhelm M., Syväjärvi M., Wellmann P.:
    Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence
    In: Advanced Materials Proceedings 2 (2017), p. 769-773
    ISSN: 2002-4428
    DOI: 10.5185/amp.2017/415
    BibTeX: Download
  • Yakimova R., Ivanov IG., Vines L., Linnarsson MK., Gällström A., Giannazzo F., Roccaforte F., Wellmann P., Syväjärvi M., Jokubavicius V.:
    Growth, defects and doping of 3C-SiC on hexagonal polytypes
    In: ECS Journal of Solid State Science and Technology 6 (2017), p. P741-P745
    ISSN: 2162-8769
    DOI: 10.1149/2.0281710jss
    BibTeX: Download

2016

  • Fahlbusch L., Schöler M., Mattle P., Schnitzer S., Khodamoradi H., Iwamoto N., Svensson BG., Wellmann P.:
    High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
    In: Materials Science Forum 858 (2016), p. 33-36
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.858.33
    BibTeX: Download
  • Salamon M., Reisinger S., Schlechter T., Schmitt M., Hofmann T., Uhlmann N., Schug S., Arlt W., Fahlbusch L., Arzig M., Wellmann P.:
    X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry
    WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY (Iguassu Falls, September 26, 2016 - September 29, 2016)
    In: International Society for Industrial Process (ed.): WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY 2016
    URL: http://www.isipt.org/world-congress/8.html
    BibTeX: Download
  • Schimmel S., Künecke U., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
    Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides
    In: Journal of Crystal Growth 456 (2016), p. 33-42
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2016.08.067
    BibTeX: Download
  • Schuh P., Vecera P., Hirsch A., Syväjärvi M., Litrico G., La Via F., Mauceri M., Wellmann P.:
    Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates
    In: Materials Science Forum 858 (2016), p. 89-92
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.858.89
    BibTeX: Download
  • Schuster M., Wernicke T., Möckel S., Wellmann P.:
    Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions
    In: International Journal of Nanoparticles and Nanotechnology 2:006 (2016)
    Open Access: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
    URL: http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
    BibTeX: Download
  • Stroth C., Sayed MH., Schuster M., Ohland J., Hammer-Riedel I., Hammer MS., Wellmann P., Parisi J., Gütay L.:
    Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
    In: Journal of Materials Science: Materials in Electronics 1-9 (2016), p. 506-511
    ISSN: 0957-4522
    DOI: 10.1109/PVSC.2016.7749646
    BibTeX: Download
  • Sun J., Jokubavicius V., Gao L., Booker I., Jansson M., Liu X., Hofmann JP., Hensen EJ., Linnarsson MK., Wellmann P., Ramiro I., Marti A., Yakimova R., Syväjärvi M.:
    Solar driven energy conversion applications based on 3C-SiC
    In: Materials Science Forum 858 (2016), p. 1028-1031
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.858.1028
    BibTeX: Download
  • Syväjärvi M., Ma Q., Jokubavicius V., Galeckas A., Sun J., Liu X., Jansson M., Wellmann P., Linarsson M., Runde P., Johansen BA., Thøgersen A., Diplas S., Carvalho PA., Løvvik OM., Wright DN., Azarov AY., Svensson BG.:
    Cubic silicon carbide as a potential photovoltaic material
    In: Solar Energy Materials and Solar Cells 145 (2016), p. 104-108
    ISSN: 0927-0248
    DOI: 10.1016/j.solmat.2015.08.029
    BibTeX: Download
  • Wellmann P., Fahlbusch L., Salamon M., Uhlmann N.:
    Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions
    In: Materials Science Forum 858 (2016), p. 49-52
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.858.49
    BibTeX: Download

2015

  • Beier M., Trempa M., Seebeck J., Reimann C., Wellmann P., Gründig-Wendrock B., Friedrich J., Dadzis K., Sylla L., Richter T.:
    Feedstock recharging during directional solidification of silicon ingots for PV applications
    29th European Photovoltaic Solar Energy Conference and Exhibition (Amsterdam, September 22, 2014 - September 26, 2014)
    In: EUPVSEC (ed.): Proceedings of the 29th EU PVSEC conference 2015
    DOI: 10.4229/EUPVSEC20142014-2AV.1.11
    BibTeX: Download
  • Hertweck B., Schimmel S., Steigerwald T., Alt N., Wellmann P., Schlücker E.:
    Ceramic liner technology for ammonoacidic synthesis
    In: Journal of Supercritical Fluids 99 (2015), p. 76-87
    ISSN: 0896-8446
    DOI: 10.1016/j.supflu.2015.01.017
    BibTeX: Download
  • Jokubavicius V., Yazdi GR., Liljedahl R., Ivanov IG., Sun J., Liu X., Schuh P., Wilhelm M., Wellmann P., Yakimova R., Syväjärvi M.:
    Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
    In: Crystal Growth & Design 15 (2015), p. 2940-2947
    ISSN: 1528-7483
    DOI: 10.1021/acs.cgd.5b00368
    BibTeX: Download
  • Künecke U., Hetzner C., Möckel S., Yoo HS., Hock R., Wellmann P.:
    Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence
    In: Thin Solid Films 582 (2015), p. 387-391
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2014.10.063
    BibTeX: Download
  • Möckel S., Wernicke T., Arzig M., Köder P., Brandl M., Ahmad R., Distaso M., Peukert W., Hock R., Wellmann P.:
    Low temperature formation of CuIn1 - xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors
    In: Thin Solid Films 582 (2015), p. 60-68
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2014.11.060
    BibTeX: Download
  • Rankl D., Jokubavicius V., Syväjärvi M., Wellmann P.:
    Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
    In: Materials Science Forum 821-823 (2015), p. 77-80
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.821-823.77
    BibTeX: Download
  • Schimmel S., Lindner M., Steigerwald T., Hertweck B., Richter TM., Künecke U., Alt N., Niewa R., Schlücker E., Wellmann P.:
    Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
    In: Journal of Crystal Growth 418 (2015), p. 64-69
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2015.02.020
    BibTeX: Download
  • Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
    Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
    DOI: 10.1016/j.egypro.2015.12.296
    BibTeX: Download
  • Schuster M., Distaso M., Möckel S., Künecke U., Peukert W., Wellmann P.:
    Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
    In: Energy Procedia 84 (2015), p. 62-70
    ISSN: 1876-6102
    DOI: 10.1016/j.egypro.2015.12.296
    BibTeX: Download
  • Wellmann P., Neubauer G., Fahlbusch L., Salamon M., Uhlmann N.:
    Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
    In: Crystal Research and Technology 50 (2015), p. 2-9
    ISSN: 0232-1300
    DOI: 10.1002/crat.201400216
    BibTeX: Download
  • Wilhelm M., Beck F., Wellmann P.:
    Towards the growth of SiGeC epitaxial layers for the application in Si solar cells
    In: Energy Procedia 84 (2015), p. 236-241
    ISSN: 1876-6102
    DOI: 10.1016/j.egypro.2015.12.319
    BibTeX: Download
  • Wilhelm M., Rieth M., Brandl M., Wibowo RA., Hock R., Wellmann P.:
    Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C
    In: Thin Solid Films 577 (2015), p. 88-93
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2015.01.049
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  • Zweschke A., Wellmann P.:
    Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation
    In: Thin Solid Films 582 (2015), p. 397-400
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2014.11.002
    BibTeX: Download
  • Zweschke A., Wellmann P.:
    Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
    In: Energy Procedia 84 (2015), p. 86-92
    ISSN: 1876-6102
    DOI: 10.1016/j.egypro.2015.12.299
    BibTeX: Download

2014

  • Grivickas V., Gulbinas K., Jokubavicius V., Sun J., Karaliūnas M., Kamiyama S., Linnarsson MK., Kaiser M., Wellmann P., Syväjärvi M.:
    Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
    In: IOP Conference Series: Materials Science and Engineering 56 (2014), Article No.: 012004
    ISSN: 1757-8981
    DOI: 10.1088/1757-899X/56/1/012004
    BibTeX: Download
  • Kaiser M., Schimmel S., Jokubavicius V., Linnarsson MK., Ou H., Syväjärvi M., Wellmann P.:
    Nucleation and growth of polycrystalline SiC
    In: IOP Conference Series: Materials Science and Engineering 56 (2014), Article No.: 012001
    ISSN: 1757-8981
    DOI: 10.1088/1757-899X/56/1/012001
    BibTeX: Download
  • Neubauer G., Salamon M., Uhlmann N., Wellmann P.:
    Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography
    In: Materials Science Forum 778-780 (2014), p. 9-12
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.778-780.9
    BibTeX: Download
  • Ou H., Ou Y., Argyraki A., Schimmel S., Kaiser M., Wellmann P., Linnarsson MK., Jokubavicius V., Sun J., Liljedahl R., Syväjärvi M.:
    Advances in wide bandgap SiC for optoelectronics
    In: European Physical Journal B 87 (2014)
    ISSN: 1434-6028
    DOI: 10.1140/epjb/e2014-41100-0
    BibTeX: Download
  • Schimmel S., Kaiser M., Jokubavicius V., Ou Y., Hens P., Linnarsson MK., Sun J., Liljedahl R., Ou H., Syväjärvi M., Wellmann P.:
    The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
    In: IOP Conference Series: Materials Science and Engineering 56 (2014)
    ISSN: 1757-8981
    DOI: 10.1088/1757-899X/56/1/012002
    BibTeX: Download
  • Schimmel S., Künecke U., Baser HH., Steigerwald T., Hertweck B., Alt N., Schlücker E., Schwieger W., Wellmann P.:
    Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
    In: Physica Status Solidi (C) Current Topics in Solid State Physics 11 (2014), p. 1439-1442
    ISSN: 1862-6351
    DOI: 10.1002/pssc.201300656
    BibTeX: Download
  • Schimmel S., Künecke U., Steigerwald T., Hertweck B., Alt N., Schlücker E., Wellmann P.:
    In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging
    German Conference on Crystal Growth (Halle, March 12, 2014 - March 14, 2014)
    BibTeX: Download
  • Wellmann P., Syvaejaervi M., Ou H. (ed.):
    Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications, Proceedings of the E-MRS 2013 Spring Meeting, Symposium G
    2014
    (IOP Conference Series: Materials Science and Engineering, Vol. 56, Number 1)
    DOI: 10.1088/1757-899X/56/1/011001
    BibTeX: Download
  • Wellmann P., Syväjärvi M., Ou H.:
    Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
    EMRS 2013 Spring Meeting, Symposium G (Strasbourg, May 27, 2013 - May 31, 2013)
    In: IOP Conf. Series: Materials Science and Engineering 56 (2014) 011001 2014
    DOI: 10.1088/1757-899X/56/1/011001
    BibTeX: Download
  • Wibowo RA., Möckel S., Yoo HS., Hölzing A., Hock R., Wellmann P.:
    Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques
    In: Journal of Alloys and Compounds 588 (2014), p. 254-258
    ISSN: 0925-8388
    DOI: 10.1016/j.jallcom.2013.10.248
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2013

  • Benz F., Strunk HP., Schaab J., Künecke U., Wellmann P.:
    Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
    In: Journal of Applied Physics 114 (2013), Article No.: 073518
    ISSN: 0021-8979
    DOI: 10.1063/1.4818815
    BibTeX: Download
  • Hupfer T., Hens P., Kaiser M., Jokubavicius V., Syväjärvi M., Wellmann P.:
    Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
    In: Materials Science Forum 740-742 (2013), p. 52-55
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.52
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  • Jokubavicius V., Kaiser M., Hens P., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
    Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates
    In: Materials Science Forum 740-742 (2013), p. 19-22
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.19
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  • Kaiser M., Hupfer T., Jokubavicius V., Schimmel S., Syväjärvi M., Ou Y., Ou H., Linnarsson MK., Wellmann P.:
    Polycrystalline SiC as source material for the growth of fluorescent SiC layers
    In: Materials Science Forum 740-742 (2013), p. 39-42
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.39
    BibTeX: Download
  • Künecke U., Hölzing A., Jost S., Lechner R., Vogt H., Heiss A., Palm J., Hock R., Wellmann P.:
    Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing
    In: Thin Solid Films 535 (2013), p. 97-101
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2012.11.069
    BibTeX: Download
  • Linnarsson MK., Kaiser M., Liljedahl R., Jokubavicius V., Ou Y., Wellmann P., Ou H., Syväjärvi M.:
    Lateral boron distribution in polycrystalline SiC source materials
    In: Materials Science Forum 740-742 (2013), p. 397-400
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.397
    BibTeX: Download
  • Möckel S., Hölzing A., Hock R., Wellmann P.:
    In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium
    In: Thin Solid Films 535 (2013), p. 133-137
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2012.11.081
    BibTeX: Download
  • Neubauer G., Salamon M., Roider F., Uhlmann N., Wellmann P.:
    Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth
    In: Materials Science Forum 740-742 (2013), p. 27-30
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.27
    BibTeX: Download
  • Ou Y., Jokubavicius V., Kaiser M., Wellmann P., Linnarsson MK., Yakimova R., Syväjärvi M., Ou H.:
    Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC
    In: Materials Science Forum 740-742 (2013), p. 1024-1027
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.1024
    BibTeX: Download
  • Schimmel S., Kaiser M., Hens P., Jokubavicius V., Liljedahl R., Sun J., Yakimova R., Ou Y., Ou H., Linnarsson MK., Wellmann P., Syväjärvi M.:
    Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
    In: Materials Science Forum 740-742 (2013), p. 185-188
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.185
    BibTeX: Download
  • Schuster M., Möckel S., Wibowo RA., Hock R., Wellmann P.:
    Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors
    In: Materials Research Society Symposium - Proceedings 1538 (2013), p. 203-208
    ISSN: 0272-9172
    DOI: 10.1557/opl.2013.980
    BibTeX: Download
  • Sun J., Kamiyama S., Wellmann P., Liljedahl R., Yakimova R., Syväjärvi M.:
    Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
    In: Materials Science Forum 740-742 (2013), p. 315-318
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.315
    BibTeX: Download
  • Wibowo RA., Möckel S., Yoo HS., Hetzner C., Hölzing A., Wellmann P., Hock R.:
    Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films
    In: Materials Chemistry and Physics 142 (2013), p. 311-317
    ISSN: 0254-0584
    DOI: 10.1016/j.matchemphys.2013.07.021
    BibTeX: Download
  • Wilhelm M., Kaiser M., Jokubavicius V., Syväjärvi M., Ou Y., Ou H., Wellmann P.:
    Photoluminescence topography of fluorescent SiC and its corresponding source crystals
    In: Materials Science Forum 740-742 (2013), p. 421-424
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.740-742.421
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  • Zheng Q., Crocco J., Bensalah H., Wellmann P., Osvet A., Künecke U., Dierre F., Vela O., Perez J., Dieguez E.:
    Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
    In: Journal of Crystal Growth 381 (2013), p. 15-21
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2013.06.033
    BibTeX: Download

2012

  • Hens P., Jokubavicius V., Liljedahl R., Wagner G., Yakimova R., Wellmann P., Syväjärvi M.:
    Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
    In: Materials Letters 67 (2012), p. 300-302
    ISSN: 0167-577X
    DOI: 10.1016/j.matlet.2011.09.109
    BibTeX: Download
  • Hens P., Müller J., Spiecker E., Wellmann P.:
    Defect structures at the silicon/3C-SiC interface
    In: Materials Science Forum 717-720 (2012), p. 423-426
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.717-720.423
    BibTeX: Download
  • Hens P., Müller J., Wagner G., Liljedahl R., Yakimova R., Spiecker E., Wellmann P., Syväjärvi M.:
    Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
    In: Materials Science Forum 717-720 (2012), p. 177-180
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.717-720.177
    BibTeX: Download
  • Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
    Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)
    In: Thin Solid Films 522 (2012), p. 2-6
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2011.10.177
    BibTeX: Download
  • Jokubavicius V., Hens P., Liljedahl R., Sun JW., Kaiser M., Wellmann P., Sano S., Yakimova R., Kamiyama S., Syväjärvi M.:
    Effects of source material on epitaxial growth of fluorescent SiC
    In: Thin Solid Films 522 (2012), p. 7-10
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2011.10.176
    BibTeX: Download
  • Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
    Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices
    In: Conference on Lasers and Electro-Optics (2012), Article No.: CF3J.2.
    ISSN: 2160-9020
    DOI: 10.1364/CLEO_SI.2012.CF3J.2
    BibTeX: Download
  • Ou Y., Jokubavicius V., Hens P., Kaiser M., Wellmann P., Yakimova R., Syväjärvi M., Ou H.:
    Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
    In: Optics Express 20 (2012), p. 7575-7579
    ISSN: 1094-4087
    DOI: 10.1364/OE.20.007575
    BibTeX: Download
  • Syväjärvi M., Müller J., Sun JW., Grivickas V., Ou Y., Jokubavicius V., Hens P., Kaiser M., Ariyawong K., Gulbinas K., Liljedahl R., Linnarsson MK., Kamiyama S., Wellmann P., Spiecker E., Ou H.:
    Fluorescent SiC as a new material for white LEDs
    In: Physica Scripta T148 (2012), Article No.: 014002
    ISSN: 0031-8949
    DOI: 10.1088/0031-8949/2012/T148/014002
    BibTeX: Download
  • Vasiliauskas R., Marinova M., Hens P., Wellmann P., Syvajarvi M., Yakimova R.:
    Nucleation Control of Cubic Silicon Carbide on 6H-Substrates
    In: Crystal Growth & Design 12 (2012), p. 197-204
    ISSN: 1528-7483
    DOI: 10.1021/cg200929r
    BibTeX: Download
  • Wellmann P., Syväjärvi M., Kneissel M. (ed.):
    Engineering of Wide Bandgap Semiconductor Materials for Energy Saving, Proceedings of the E-MRS 2011 Spring Meeting, Symposium Q
    2012
    (Thin Solid Films, Vol. 522)
    DOI: 10.1016/j.tsf.2012.04.001
    BibTeX: Download
  • Wellmann P., Syväjärvi M., Kneissel M., Wang R.:
    Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving Preface
    In: Thin Solid Films 522 (2012), p. 1-1
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2012.04.001
    BibTeX: Download
    (anderer)

2011

  • Hens P., Mueller J., Fahlbusch L., Spiecker E., Wellmann P., Spiecker E.:
    Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy
    In: Materials Science Forum 679-680 (2011), p. 127-130
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.679-680.127
    BibTeX: Download
  • Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
    The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction
    In: Thin Solid Films 519 (2011), p. 7197-7200
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2010.12.138
    BibTeX: Download
  • Karpinski H., Sakwe A., Fried MJ., Bänsch E., Wellmann P.:
    Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
    In: Materials Science Forum 679-680 (2011), p. 277-281
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.679-680.277
    BibTeX: Download
  • Maksimenko I., Kilian D., Mehringer C., Voigt M., Peukert W., Wellmann P.:
    Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid
    In: Journal of Applied Physics 110 (2011), Article No.: 104301
    ISSN: 0021-8979
    DOI: 10.1063/1.3658634
    BibTeX: Download
  • Maksimenko I., Wellmann P.:
    Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices
    In: Thin Solid Films 519 (2011), p. 5744-5747
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2010.12.209
    BibTeX: Download
  • Maksimenko I., Wellmann P.:
    Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives
    In: Thin Solid Films 520 (2011), p. 1341-1347
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2011.04.142
    BibTeX: Download
  • Richter H., Wellmann P. (ed.):
    From Semiconductors to New Energy – the PV Value added Chain, Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting
    2011
    (Proceedings of the E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France)
    BibTeX: Download
  • Wellmann P.:
    Kooperative Promotionen mit Fachhochschulen in Zusammenarbeit mit der technischen Fakultät der Universität Erlangen-Nürnberg; erschienen in „Ingenieurpromotion – Stärken und Qualitätssicherung, Beiträge eines gemeinsamen Symposiums von acatech, TU9, ARGE TU/TH und 4ing
    In: Horst Hippler (ed.): Ingenieurpromotion – Stärken und Qualitätssicherung, Berlin Heidelberg: Springer Verlag, 2011, p. 125-132 (acatech Diskussion)
    BibTeX: Download

2010

  • Hens P., Wagner G., Hölzing A., Hock R., Wellmann P.:
    Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)
    In: Materials Science Forum 645-648 (2010), p. 151-154
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.645-648.151
    BibTeX: Download
  • Hock R., Konias K., Perdicaro LMS., Magerl A., Hens P., Wellmann P.:
    Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction
    In: Materials Science Forum 645-648 (2010), p. 29-32
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.645-648.29
    BibTeX: Download
  • Hölzing A., Schurr R., Jost S., Palm J., Deseler K., Hock R., Wellmann P.:
    Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content
    In: Materials Research Society Symposium - Proceedings 1165 (2010), p. 25-30
    ISSN: 0272-9172
    DOI: 10.1557/PROC-1165-M02-02
    BibTeX: Download
  • Maksimenko I., Groß M., Königer T., Münstedt H., Wellmann P.:
    Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites
    In: Thin Solid Films 518 (2010), p. 2910-2915
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2009.10.151
    BibTeX: Download
  • Oehlschläger F., Müller J., Künecke U., Hoelzing A., Schurr R., Hock R., Wellmann P.:
    Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
    In: Energy Procedia 2 (2010), p. 183-188
    ISSN: 1876-6102
    DOI: 10.1016/j.egypro.2010.07.026
    BibTeX: Download
  • Tang K., Künecke U., Oehlschläger F., Hölzing A., Schurr R., Hock R., Wellmann P.:
    Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
    In: Solar Energy Materials and Solar Cells 94 (2010), p. 1875-1879
    ISSN: 0927-0248
    DOI: 10.1016/j.solmat.2010.06.002
    BibTeX: Download

2009

  • Groß M., Linse N., Maksimenko I., Wellmann P.:
    Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices
    In: Advanced Engineering Materials 11 (2009), p. 295-301
    ISSN: 1438-1656
    DOI: 10.1002/adem.200800292
    BibTeX: Download
  • Hens P., Künecke U., Konias K., Hock R., Wellmann P.:
    Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
    In: Materials Science Forum 615-617 (2009), p. 11-14
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.615-617.11
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  • Hens P., Künecke U., Wellmann P.:
    Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
    In: Materials Science Forum 600-603 (2009), p. 19-22
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.600-603.19
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  • Hens P., Syvaejaervi M., Oehlschläger F., Wellmann P., Yakimova R.:
    P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
    In: Materials Science Forum 615-617 (2009), p. 85-88
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.615-617.85
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  • Hölzing A., Schurr R., Schäfer H., Jaeger A., Jost S., Palm J., Deseler K., Wellmann P., Hock R.:
    Sulfo-selenization of metallic thin films of Cu, In and Cu-In
    In: Thin Solid Films 517 (2009), p. 2213-2217
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2008.10.089
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  • Oehlschläger F., Juillaguet S., Peyre H., Calmassel J., Wellmann P.:
    Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
    In: Materials Science Forum 615-617 (2009), p. 259-262
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.615-617.259
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  • Pons M., Nishizawa SI., Wellmann P., Blanquet E., Chaussende D., Dedulle J., Madar R.:
    Silicon carbide growth: C/Si ratio evaluation and modeling
    In: Materials Science Forum 600-603 (2009), p. 83-88
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.600-603.83
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  • Stockmeier M., Müller R., Sakwe A., Wellmann P., Magerl A.:
    On the lattice parameters of silicon carbide
    In: Journal of Applied Physics 105 (2009), Article No.: 033511
    ISSN: 0021-8979
    DOI: 10.1063/1.3074301
    BibTeX: Download
  • Stockmeier M., Sakwe A., Hens P., Wellmann P., Hock R., Magerl A.:
    Thermal Expansion Coefficients of 6H Silicon Carbide
    In: Materials Science Forum 600-603 (2009), p. 517-520
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.600-603.517
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  • Wellmann P., Feng Z., Shi G. (ed.):
    Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen
    2009
    ISBN: 978-3-00-027314-8
    BibTeX: Download
  • Wellmann P., Konias K., Hens P., Hock R., Magerl A.:
    In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
    In: Materials Science Forum 615-617 (2009), p. 23-26
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.615-617.23
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2008

  • Groß M., Maksimenko I., Faber H., Linse N., Wellmann P.:
    Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique
    11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008) (Boston, Massachusetts, June 1, 2008 - June 5, 2008)
    In: NSTI, Nano Science and Technology Institute (ed.): Nanotech 2008, Vol. 1-3 2008
    BibTeX: Download
  • Sakwe A., Stockmeier M., Hens P., Müller R., Queren D., Künecke U., Konias K., Hock R., Magerl A., Pons M., Winnacker A., Wellmann P.:
    Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
    In: physica status solidi (b) 245 (2008), p. 1239-1256
    ISSN: 0370-1972
    DOI: 10.1002/pssb.200743520
    BibTeX: Download
  • Steeds JW., Sullivan W., Furkert SA., Evans GA., Wellmann P.:
    Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
    In: Physical Review B 77 (2008), Article No.: 195203
    ISSN: 1098-0121
    DOI: 10.1103/PhysRevB.77.195203
    BibTeX: Download
  • Wellmann P., Müller R., Sakwe A., Künecke U., Hens P., Stockmeier M., Konias K., Hock R., Magerl A., Pons M.:
    Bulk growth of SiC
    In: Materials Research Society Symposium - Proceedings 1069 (2008), p. 3-14
    ISSN: 0272-9172
    DOI: 10.1557/PROC-1069-D01-01
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  • Wellmann P., Sakwe A., Oehlschläger F., Hoffmann V., Zeimer U., Knauer A.:
    Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
    In: Journal of Crystal Growth 310 (2008), p. 955-958
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2007.11.064
    BibTeX: Download
  • Welte A., Waldauf C., Brabec CJ., Wellmann P.:
    Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
    In: Thin Solid Films 516 (2008), p. 7256-7259
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2007.12.025
    BibTeX: Download

2007

  • Bathelt R., Buchhauser D., Gärditz C., Paetzold R., Wellmann P.:
    Light extraction from OLEDs for lighting applications through light scattering
    In: Organic Electronics 8 (2007), p. 293-299
    ISSN: 1566-1199
    DOI: 10.1016/j.orgel.2006.11.003
    BibTeX: Download
  • Chaussende D., Wellmann P., Pons M.:
    Status of SiC bulk growth processes
    In: Journal of Physics D-Applied Physics 40 (2007), p. 6150-6158
    ISSN: 0022-3727
    DOI: 10.1088/0022-3727/40/20/S02
    BibTeX: Download
  • Groß M., Winnacker A., Wellmann P.:
    Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers
    In: Thin Solid Films 515 (2007), p. 8567-8572
    ISSN: 0040-6090
    DOI: 10.1016/j.tsf.2007.03.136
    BibTeX: Download
  • Jang YS., Sakwe A., Wellmann P., Juillaguet S., Peyre H., Camassel J., Steeds JW.:
    Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies
    In: Materials Science Forum 556-557 (2007), p. 13-16
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.556-557.13
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  • Konias K., Hock R., Stockmeier M., Wellmann P., Miller M., Ossege S., Magerl A.:
    In-situ X-ray measurements of defect generation during PVT growth of SiC
    In: Materials Science Forum 556-557 (2007), p. 267-270
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.556-557.267
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  • Sakwe A., Jang YS., Wellmann P.:
    Defect etching of non-polar and semi-polar faces in SiC
    In: Materials Science Forum 556-557 (2007), p. 243-246
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.556-557.243
    BibTeX: Download
  • Sakwe A., Müller R., Wellmann P.:
    Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]
    In: Journal of Crystal Growth 299 (2007), p. 234-234
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2006.10.196
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  • Sakwe A., Wellmann P.:
    Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals
    In: Materials Science Forum 556-557 (2007), p. 263-266
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.556-557.263
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  • Wagner M., Mustafa E., Hahn S., Syväjärvi M., Yakimova R., Jang YS., Sakwe A., Wellmann P.:
    Contactless electrical defect characterization and topography of a-plane grown epitaxial layers
    In: Materials Science Forum 556-557 (2007), p. 327-330
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.556-557.327
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  • Wellmann P., Feng Z., Shi G. (ed.):
    Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai
    Shanghai: 2007
    ISBN: 978-7-5608-3614-0
    BibTeX: Download
  • Wellmann P., Hens P., Sakwe A., Queren D., Müller R., Durst K., Göken M.:
    Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth
    In: Materials Science Forum 556-557 (2007), p. 259-262
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.556-557.259
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  • Wellmann P., Karl U., Kleber S., Schmitt H.:
    Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
    In: Journal of Applied Physics 101 (2007)
    ISSN: 0021-8979
    DOI: 10.1063/1.2743090
    BibTeX: Download
  • Wellmann P., Pons M.:
    Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
    In: Journal of Crystal Growth 303 (2007), p. 337-341
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2006.11.328
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2006

  • Chaussende D., Wellmann P., Ucar M., Pons M., Madar R.:
    In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
    In: Materials Science Forum 527-529 (2006), p. 63-66
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.527-529.63
    BibTeX: Download
  • Contreras S., Zielinski M., Konczewicz L., Blanc C., Juillaguet S., Müller R., Künecke U., Wellmann P., Camassel J.:
    Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
    In: Materials Science Forum 527-529 (2006), p. 633-636
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.527-529.633
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  • Künecke U., Wellmann P.:
    Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
    In: European Physical Journal-Applied Physics 34 (2006), p. 209-213
    ISSN: 1286-0042
    DOI: 10.1051/epjap:2006055
    BibTeX: Download
  • Müller R., Künecke U., Queren D., Sakwe A., Wellmann P.:
    Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
    In: Chemical Vapor Deposition 12 (2006), p. 557-561
    ISSN: 0948-1907
    DOI: 10.1002/cvde.200606474
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  • Müller R., Künecke U., Thuaire A., Mermoux M., Pons M., Wellmann P.:
    Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering
    In: Physica Status Solidi C: Conferences 3 (2006), p. 558-561
    ISSN: 1610-1634
    DOI: 10.1002/pssc.200564148
    BibTeX: Download
  • Müller R., Künecke U., Weingärtner R., Maier M., Wellmann P.:
    Anomalous charge carrier transport phenomena in highly aluminum doped SiC
    In: Physica Status Solidi C: Conferences 3 (2006), p. 554-557
    ISSN: 1610-1634
    DOI: 10.1002/pssc.200564150
    BibTeX: Download
  • Nishizawa SI., Wellmann P., Pons M.:
    SiC epitaxial structure growth: evaluation and modeling
    In: M. Syväjärvi and R. Yakimova (ed.): Wide Band Gap Materials and New Developments, India: Transworld Research Network, 2006, p. 69-89
    BibTeX: Download
  • Pons M., Wellmann P., Nishizawa SI., Blanquet E., Dedulle J., Chaussende D.:
    Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling
    In: Materials Research Society Symposium - Proceedings 911 (2006), Article No.: 0911-B04-02
    ISSN: 0272-9172
    DOI: 10.1557/PROC-0911-B04-02
    BibTeX: Download
  • Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
    Electronic Raman Studies of Shallow Donors in Silicon Carbide
    In: Materials Science Forum 527-529 (2006), p. 579
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.527-529.579
    BibTeX: Download
  • Sakwe A., Müller R., Masri P., Wellmann P.:
    Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals
    In: Physica Status Solidi C: Conferences 3 (2006), p. 562-566
    ISSN: 1610-1634
    DOI: 10.1002/pssc.200564152
    BibTeX: Download
  • Sakwe A., Müller R., Queren D., Künecke U., Wellmann P.:
    Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
    In: Physica Status Solidi (C) Current Topics in Solid State Physics 3 (2006), p. 567-570
    ISSN: 1862-6351
    DOI: 10.1002/pssc.200564153
    BibTeX: Download
  • Sakwe A., Müller R., Wellmann P.:
    Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC
    In: Journal of Crystal Growth 289 (2006), p. 520-526
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2005.11.096
    BibTeX: Download
  • Topic I., Sockel HG., Wellmann P., Göken M.:
    The influence of microstructure on the magnetic properties of WC/Co hardmetals
    In: Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 423 (2006), p. 306-312
    ISSN: 0921-5093
    DOI: 10.1016/j.msea.2006.02.018
    BibTeX: Download
  • Wellmann P., Müller R., Pons M.:
    Modeling and experimental verification of SiC M-PVT bulk crystal growth
    In: Materials Science Forum 527-529 (2006), p. 75-78
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.527-529.75
    BibTeX: Download
  • Wellmann P., Müller R., Queren D., Sakwe A., Pons M.:
    Vapor growth of SiC bulk crystals and its challenge of doping
    In: Surface & Coatings Technology 201 (2006), p. 4026-4031
    ISSN: 0257-8972
    DOI: 10.1016/j.surfcoat.2006.08.033
    BibTeX: Download
  • Wellmann P., Pons M.:
    Silicon carbide CVD for electronic device applications
    In: Chemical Vapor Deposition 12 (2006), p. 463-464
    ISSN: 0948-1907
    DOI: 10.1002/cvde.200690018
    BibTeX: Download
  • Wellmann P., Pons M. (ed.):
    Special Issue on Silicon Carbid CVD for Electronic Device Applications
    Weinheim: 2006
    (Special issue of the Journal of Chemical Vapor Deposition, Vol. 12)
    BibTeX: Download
  • Wellmann P., Queren D., Müller R., Sakwe A., Künecke U.:
    Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
    In: Materials Science Forum 527-529 (2006), p. 79-82
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.527-529.79
    BibTeX: Download
  • Wellmann P., Shi G., Feng Z. (ed.):
    Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai
    2006
    ISBN: 978-3-00-019576-1
    BibTeX: Download

2005

  • Müller R., Künecke U., Weingärtner R., Schmitt H., Desperrier P., Wellmann P.:
    High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
    In: Materials Science Forum 483 (2005), p. 31-34
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.483-485.31
    BibTeX: Download
  • Pons M., Blanquet E., Dedulle J., Ucar M., Wellmann P., Danielsson Ö., Ferret P., Di Cioccio L., Baillet F., Chaussende D., Madar R.:
    Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
    In: Materials Science Forum 483 (2005), p. 3-8
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.483-485.3
    BibTeX: Download
  • Pons M., Nishizawa SI., Wellmann P., Ucar M., Blanquet E., Dedulle J., Baillet F., Chaussende D., Bernard C., Madar R.:
    Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics
    In: ECS Transactions 2005-9 (2005), p. 1-12
    ISSN: 1938-5862
    URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844440869&origin=inward
    BibTeX: Download
  • Sakwe A., Herro ZG., Wellmann P.:
    Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
    In: Materials Science Forum 483 (2005), p. 283-286
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.483-485.283
    BibTeX: Download
  • Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
    Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
    In: Materials Science Forum 483 (2005), p. 445-448
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.483-485.445
    BibTeX: Download
  • Wellmann P.:
    Additional pipework opens up transistor applications for SiC
    In: Compound Semiconductor 11 (2005), p. 23-24
    ISSN: 1096-598X
    URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-18344397170&origin=inward
    BibTeX: Download
  • Wellmann P., Desperrier P., Müller R., Straubinger T., Winnacker A., Baillet F., Blanquet E., Dedulle J., Pons M.:
    SiC single crystal growth by a modified physical vapor transport technique
    In: Journal of Crystal Growth 275 (2005), p. E555-E560
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2004.11.070
    BibTeX: Download
  • Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
    In situ visualization of SiC physical vapor transport crystal growth
    In: Journal of Crystal Growth 275 (2005), p. e1807–e1812
    ISSN: 0022-0248
    DOI: 10.1016/j.jcrysgro.2004.11.253
    BibTeX: Download
  • Wellmann P., Müller R., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L.:
    Micro-optical characterization study of highly p-type doped SiC : Al wafers
    In: Materials Science Forum 483 (2005), p. 393-396
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.483-485.393
    BibTeX: Download
  • Wellmann P., Straubinger T., Desperrier P., Müller R., Künecke U., Sakwe A., Schmitt H., Winnacker A., Blanquet E., Dedulle J., Pons M.:
    Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
    In: Materials Science Forum 483 (2005), p. 25-30
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.483-485.25
    BibTeX: Download
  • Wellmann P., Straubinger T., Künecke U., Müller R., Sakwe A., Pons M., Thuaire A., Crisci A., Mermoux M., Auvray L., Camassel J.:
    Optical mapping of aluminum doped p-type SiC wafers
    In: physica status solidi (a) 202 (2005), p. 598-601
    ISSN: 1862-6300
    DOI: 10.1002/PSSA.200460436
    BibTeX: Download

2004

  • Desperrier P., Müller R., Winnacker A., Wellmann P.:
    Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
    In: Materials Science Forum 457-460 (2004), p. 727-730
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.457-460.727
    BibTeX: Download
  • Müller R., Desperrier P., Seitz C., Weißer M., Magerl A., Maier M., Winnacker A., Wellmann P.:
    In-situ Er-doping of SiC bulk single crystals
    In: Materials Science Forum 457-460 (2004), p. 723-726
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.457-460.723
    BibTeX: Download
  • Weingärtner R., Wellmann P., Winnacker A.:
    On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
    In: Materials Science Forum 457-460 (2004), p. 645-648
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.457-460.645
    BibTeX: Download
  • Weißer M., Seitz C., Wellmann P., Hock R., Magerl A.:
    Structural defects in SiC crystals investigated by high energy x-ray diffraction
    In: Materials Science Forum 457-460 (2004), p. 339-342
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.457-460.339
    BibTeX: Download
  • Wellmann P., Albrecht A., Künecke U., Birkmann B., Müller G., Jurisch M.:
    Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
    In: European Physical Journal-Applied Physics 27 (2004), p. 357-361
    ISSN: 1286-0042
    DOI: 10.1051/epjap:2004041
    BibTeX: Download
  • Wellmann P., Herro ZG., Sakwe A., Masri P., Bogdanov M., Karpov S., Kulik A., Ramm M., Makarov Y.:
    Analysis of graphitization during physical vapor transport growth of silicon carbide
    In: Materials Science Forum 457-460 (2004), p. 55-58
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.457-460.55
    BibTeX: Download

2003

  • Bickermann M., Weingärtner R., Herro ZG., Hofmann HD., Künecke U., Wellmann P., Winnacker A.:
    Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
    In: Materials Science Forum 433-436 (2003), p. 337-340
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.433-436.337
    BibTeX: Download
  • Herro ZG., Wellmann P., Püsche R., Hundhausen M., Ley L., Maier M., Masri P., Winnacker A.:
    Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
    In: Journal of Crystal Growth 258 (2003), p. 261-267
    ISSN: 0022-0248
    DOI: 10.1016/S0022-0248(03)01538-0
    BibTeX: Download
  • Weingärtner R., Albrecht A., Wellmann P., Winnacker A.:
    Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
    In: Materials Science Forum 433-436 (2003), p. 341-344
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.433-436.341
    BibTeX: Download
  • Weingärtner R., Bickermann M., Herro ZG., Künecke U., Sakwe A., Wellmann P., Winnacker A.:
    Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
    In: Materials Science Forum 433-436 (2003), p. 333-336
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.433-436.333
    BibTeX: Download
  • Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
    Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
    In: Materials Science Forum 433-436 (2003), p. 9-12
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.433-436.9
    BibTeX: Download
  • Wellmann P., Weingärtner R.:
    Determination of doping levels and their distribution in SiC by optical techniques
    In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 102 (2003), p. 262-268
    ISSN: 0921-5107
    DOI: 10.1016/S0921-5107(02)00707-9
    BibTeX: Download

2002

  • Birkmann B., Weingärtner R., Wellmann P., Wiedemann B., Müller G.:
    Analysis of silicon incorporation into VGF-grown GaAs
    In: Journal of Crystal Growth 237 (2002), p. 345-349
    ISSN: 0022-0248
    DOI: 10.1016/S0022-0248(01)01935-2
    BibTeX: Download
  • Straubinger T., Bickermann M., Rasp M., Weingärtner R., Wellmann P., Winnacker A.:
    Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
    In: Materials Science Forum 389-393 (2002), p. 131-134
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.389-393.131
    BibTeX: Download
  • Straubinger T., Bickermann M., Weingärtner R., Wellmann P., Winnacker A.:
    Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method
    In: Journal of Crystal Growth 240 (2002), p. 117-123
    ISSN: 0022-0248
    DOI: 10.1016/S0022-0248(02)00917-X
    BibTeX: Download
  • Weingärtner R., Wellmann P., Bickermann M., Hofmann HD., Straubinger T., Winnacker A.:
    Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
    In: Applied Physics Letters 80 (2002), p. 70-72
    ISSN: 0003-6951
    DOI: 10.1063/1.1430262
    BibTeX: Download
  • Wellmann P., Herro ZG., Straubinger T., Winnacker A.:
    'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging
    In: Materials Science Forum 389-393 (2002), p. 91-94
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.389-393.91
    BibTeX: Download
  • Wellmann P., Weingärtner R., Bickermann M., Straubinger T., Winnacker A.:
    Optical quantitative determination of doping levels and their distribution in SiC
    In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002), p. 75-78
    ISSN: 0921-5107
    DOI: 10.1016/S0921-5107(01)00976-X
    BibTeX: Download

2001

  • Bickermann M., Hofmann HD., Rasp M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
    Study of boron incorporation during PVT growth of p-type SiC crystals
    In: Materials Science Forum 353-356 (2001), p. 49-52
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.49
    BibTeX: Download
  • Bickermann M., Hofmann HD., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
    On the preparation of semi-insulating SiC bulk crystals by the PVT technique
    In: Applied Surface Science 184 (2001), p. 84-89
    ISSN: 0169-4332
    DOI: 10.1016/S0169-4332(01)00481-0
    BibTeX: Download
  • Hofmann HD., Bickermann M., Ebling D., Epelbaum B., Kadinski L., Selder M., Straubinger T., Weingärtner R., Wellmann P., Winnacker A.:
    SiC crystal growth from the vapor and liquid phase
    In: Materials Research Society Symposium - Proceedings 640 (2001), Article No.: H1.1
    ISSN: 0272-9172
    DOI: 10.1557/PROC-640-H1.1
    BibTeX: Download
  • Selder M., Kadinski L., Durst F., Straubinger T., Wellmann P., Hofmann HD.:
    Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
    In: Materials Science Forum 353-356 (2001), p. 65-68
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.65
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  • Straubinger T., Bickermann M., Hofmann HD., Weingärtner R., Wellmann P., Winnacker A.:
    Stability criteria for 4H-SiC bulk growth
    In: Materials Science Forum 353-356 (2001), p. 25-28
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.25
    BibTeX: Download
  • Straubinger T., Wellmann P., Winnacker A.:
    Investigation of a PVT SiC-growth set-up modified by an additional gas flow
    In: Materials Science Forum 353-356 (2001), p. 33-36
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.33
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  • Weingärtner R., Bickermann M., Bushevoy S., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
    Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
    In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 357-361
    ISSN: 0921-5107
    DOI: 10.1016/S0921-5107(00)00599-7
    BibTeX: Download
  • Weingärtner R., Bickermann M., Hofmann HD., Rasp M., Straubinger T., Wellmann P., Winnacker A.:
    Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
    In: Materials Science Forum 353-356 (2001), p. 397-400
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.397
    BibTeX: Download
  • Wellmann P.:
    Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg
    Aachen: Shaker Verlag, 2001
    (Berichte aus der Halbleitertechnik)
    ISBN: 3-8265-9075-9
    BibTeX: Download
  • Wellmann P., Bushevoy S., Weingärtner R.:
    Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
    In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 80 (2001), p. 352-356
    ISSN: 0921-5107
    DOI: 10.1016/S0921-5107(00)00598-5
    BibTeX: Download
  • Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
    Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
    In: Materials Science Forum 353-356 (2001), p. 11-14
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.11
    BibTeX: Download
  • Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
    Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process
    In: Materials Science Forum 225 (2001), p. 353-356
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.353-356.11
    URL: http://www.scientific.net/MSF.353-356.11
    BibTeX: Download
  • Wellmann P., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
    Impact of source material on silicon carbide vapor transport growth process
    In: Journal of Crystal Growth 225 (2001), p. 312-316
    ISSN: 0022-0248
    DOI: 10.1016/S0022-0248(01)00881-8
    BibTeX: Download

2000

  • Selder M., Kadinski L., Durst F., Straubinger T., Hofmann HD., Wellmann P.:
    Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
    In: Materials Science Forum 338-342 (2000), p. 31-34
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.338-342.31
    BibTeX: Download
  • Selder M., Kadinski L., Makarov Y., Durst F., Wellmann P., Straubinger T., Hofmann HD., Karpov S., Ramm M.:
    Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
    In: Journal of Crystal Growth 211 (2000), p. 333-338
    ISSN: 0022-0248
    DOI: 10.1016/S0022-0248(99)00853-2
    BibTeX: Download
  • Straubinger T., Bickermann M., Grau M., Hofmann HD., Kadinski L., Müller G., Selder M., Wellmann P., Winnacker A.:
    Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
    In: Materials Science Forum 338-342 (2000), p. 39-42
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.338-342.39
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  • Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
    Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation
    In: Materials Science Forum 338-342 (2000), p. 71-74
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.338-342.71
    BibTeX: Download
  • Wellmann P., Bickermann M., Hofmann HD., Kadinski L., Selder M., Straubinger T., Winnacker A.:
    In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
    In: Journal of Crystal Growth 216 (2000), p. 263-272
    ISSN: 0022-0248
    DOI: 10.1016/S0022-0248(00)00372-9
    BibTeX: Download
  • Winnacker A., Hofmann HD., Wellmann P.:
    Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics
    Third Vietnam-German Workshop on Physics and Engineering (Ho Chi Minh City)
    In: Proceedings of the third Vietnam-German Workshop on Physics and Engineering 2000
    BibTeX: Download

1999

  • Hofmann HD., Schmitt E., Bickermann M., Kölbl M., Wellmann P., Winnacker A.:
    Analysis on defect generation during the SiC bulk growth process
    In: Materials Science and Engineering B-Advanced Functional Solid-State Materials B61-62 (1999), p. 48-53
    ISSN: 0921-5107
    DOI: 10.1016/S0921-5107(98)00443-7
    BibTeX: Download
  • Wellmann P., Bickermann M., Grau M., Hofmann HD., Straubinger T., Winnacker A.:
    Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging
    In: Materials Research Society Symposium - Proceedings 572 (1999), p. 259-264
    ISSN: 0272-9172
    DOI: 10.1557/PROC-572-259
    BibTeX: Download
  • Wellmann P., Garcia J., Feng JL., Petroff P.:
    Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs
    ICPS24th conference (Helsinki, August 14, 1999 - August 20, 1999)
    In: The physics of semiconductors – World Scientific, proceedings of ICPS24th conference (1999) 1999
    BibTeX: Download

1998

  • Garcia J., Mankad T., Holtz O., Wellmann P., Petroff P.:
    Electronic states tuning of InAs self-assembled quantum dots
    In: Applied Physics Letters 72 (1998), p. 3172-3174
    ISSN: 0003-6951
    DOI: 10.1063/1.121583
    BibTeX: Download
  • Schmidt K., Kunze U., Medeiros-Ribeiro G., Garcia J., Wellmann P., Petroff P.:
    Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots
    In: Physica E-Low-Dimensional Systems & Nanostructures 2 (1998), p. 627-631
    ISSN: 1386-9477
    DOI: 10.1016/S1386-9477(98)00128-3
    BibTeX: Download
  • Wellmann P., Garcia J., Feng JL., Petroff P.:
    Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure
    In: Applied Physics Letters 73 (1998), p. 3291-3293
    ISSN: 0003-6951
    DOI: 10.1063/1.122748
    BibTeX: Download
  • Wellmann P., Garcia J., Feng JL., Petroff P.:
    Giant magnetoresistance in a low-temperature grown GaAs with imbedded MnAs nanomagnets
    Physics of Microstructured Semiconductors
    In: Physics of Microstructured Semiconductors, Vol.6 1998
    BibTeX: Download
  • Wellmann P., Schoenfeld W., Garcia J., Petroff P.:
    Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
    In: Journal of Electronic Materials 27 (1998), p. 1030-1033
    ISSN: 0361-5235
    DOI: 10.1007/s11664-998-0158-4
    BibTeX: Download

1997

  • Van Esch A., Van Bockstal L., De Boeck J., Verbanck G., Van Steenbergen A., Wellmann P., Grietens B., Bogaerts R., Herlach F., Borghs G.:
    Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
    In: Physical Review B 56 (1997), p. 13103-13112
    ISSN: 1098-0121
    BibTeX: Download
  • Wellmann P., Feng JL., Garcia J., Petroff P.:
    Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation
    In: Materials Research Society Symposium - Proceedings 475 (1997), p. 49-54
    ISSN: 0272-9172
    DOI: 10.1557/PROC-475-49
    BibTeX: Download
  • Wellmann P., Garcia J., Feng JL., Petroff P.:
    Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs
    In: Applied Physics Letters 71 (1997), p. 2532-2534
    ISSN: 0003-6951
    DOI: 10.1063/1.120109
    BibTeX: Download

1996

  • Wellmann P., Winnacker A., Pensl G.:
    On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP
    In: Materials Research Society Symposium - Proceedings 422 (1996), p. 255-266
    ISSN: 0272-9172
    DOI: 10.1557/PROC-422-255
    BibTeX: Download

1995

  • Burchard A., Deicher M., Forkel-Wirth D., Freidinger J., Kerle T., Magerle R., Pfeiffer W., Prost W., Wellmann P., Winnacker A.:
    Acceptor-hydrogen interaction in ternary III-V semiconductors
    In: Materials Science Forum 196-201 (1995), p. 987-991
    ISSN: 0255-5476
    DOI: 10.4028/www.scientific.net/MSF.196-201.987
    BibTeX: Download

1994

  • Waldmüller S., Lang M., Wellmann P., Winnacker A.:
    Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy
    IEEE, 6th International Conference on InP and Related Materials (Santa Barbara, CA, March 27, 1994 - March 31, 1994)
    In: IEEE (ed.): Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) 1994
    DOI: 10.1109/ICIPRM.1994.328209
    BibTeX: Download
Friedrich-Alexander-Universität
Erlangen-Nürnberg

Schlossplatz 4
91054 Erlangen
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